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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 郭博成 | |
dc.contributor.author | Chih-Lung Shen | en |
dc.contributor.author | 沈智隆 | zh_TW |
dc.date.accessioned | 2021-06-08T05:38:43Z | - |
dc.date.copyright | 2011-08-04 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2011-07-26 | |
dc.identifier.citation | [1] T. M. Coughlin, J. Magn. Magn. Mater. 320, 2860 (2008).
[2] A. Takeo, Y. Takahashi, Y. Tanaka, K. Miura, H. Muraoka, and Y. Nakamura, J. Appl. Phys., 87, 4987 (2000). [3] B. D. Cullity, “Introduction to Magnetic Materials”, Massachusetts: Addison-Wesley (1972). [4] Néel, Louis, “Influence des Fluctuations thermiques sur I’aimantation de grains ferromagnétique trés fins”, Compt. Rend., 228, 664-666 (1949). [5] R. Lawrence, ”Introduction to Magnetism and Magnetic recording”, John Wiley&Sons (1999). [6] H. N. Bertram, H. Zhou, and R. Gustafson, IEEE Trans. Magn. 34, 1845 (1998). [7] S. H. Charap, P.-L. Lu, and Y. He, IEEE Trans. Magn. 33, 978 (1997) [8] D. Weller and A. Moser, IEEE Trans. Magn. 35, 4423 (1999). [9] C. Kittel, Phys. Rev. 70, 965 (1946). [10] Y. Labaye, et.al, J. Appl. Phys. 91, 8715, (2002) [11] http://www.hitachigst.com [12] J. Li, M. Mirzamaani, X. Bian, M. Doerner, S. Duan, K. Tang, M. Toney, T. Arnoldussen, and M. Madison, J. Appl. Phys, 86, 4286 (1999). [13] 楊志信,台灣資訊儲存技術協會會刊,第94期,第1頁(2005). [14] D. Weller, A. Moser, L. Folks, M. E. Best, W. Lee, Mike F. Toney, M. Scgwickert, J.-U Thiele, and M. F. Doerner, IEEE Trans. Magn. 36, 10 (2000). [15] H. J. Richter, J. Magn. Magn. Mater. 287, 41 (2005). [16] P. L. Lu, S. Charap., IEEE Trans. Magn. 30, 4230 (1994). [17] P. L. Lu, S. Charap., IEEE Trans. Magn. 31, 2767(1995). [18] S. Iwasaki and Y. Nakamura, IEEE Trans. Magn. 13, 1271 (1977). [19] J. J. Miles, D. McA. McKirdy, R. W. Chantrell, and R. Wood, IEEE Trans. Magn. 39, 1876 (2003). [20] M. H. Kryder and R. W. Gustafson, J. Magn. Magn. Mater. 287, 449 (2005). [21] 郭志明,”博士論文:Co100-xTbx與Fe100-xPtx與(FePt)-(Si3N4)薄膜之磁性及微結構研究”,國立台灣大學(1999). [22] A. Goncharov, T. Schrefl, G. Hrkac, J. Dean, S. Bance, D. Suess, O. Ertl, F. Dorfbauer, and J. Fidler, Appl. Phys. Lett. 91, 222502 (2007). [23] E. F. Kneller and, R. Hawig, IEEE Trans. Magn., 27, 3588 (1991). [24] D. Weller and M. F. Doerner, Annu. Rev. Mater. Res. 30, 611 (2000). [25] T. Shima, K. Takanashi, Y. K. Takahashi, and K. Hono, Appl. Phys. Lett. 85, 2571 (2004). [26] J. S. Chen, B. C. Lim, J. F. Hu, Y. K. Lim, B. Liu, and G. M. Chow, Appl. Phys. Lett. 90, 042508 (2007). [27] C. C. Chiang, Chih-Huang Lai, and Y. C. Wu, Appl. Phys. Lett. 88, 152508 (2006). [28] K. Watanabe, Mater. Trans. JIM. 32, 292 (1991). [29] C. S. Barred, “Crystal Structure”, p. 238 (1985). [30] Y. N. Hsu, S. Jeong,D. E. Laughlin, and D. N. Lambeth, J. Appl. Phys. 89, 7068 (2001). [31] P. Villas, L. D. Calvert, “Peason’s Handbook of Crystallographic Data for Intermetallic Phase”, 4, ASM Information (1991). [32] A. C. Sun, P. C. Kuo, S. C. Chen, C. Y. Chou, H. L. Huang, and J. H. Hsu, J. Appl. Phys., 95, 7264 (2004). [33] JCPDS powder diffraction file cards, (1997). [34] K. Kang, Z. G. Zhang, C. Papusoi, and T. Suzuki, Appl. Phys. Lett. 84, 404 (2004). [35] S. S. Kang, D. E. Nikles, and J. W. Harrell, J. Appl. Phys., 93, 7178 (2003). [36] T. W. Huang, Y. H. Huang, T. H. Tu, C. H. Lee, J. Magn. Mang. Mater., 282, 127 (2004). [37] C. Srivastava, G.B. Thrompson, J.W. Harrell, D.E. Nikles, J. Appl. Phys., 99, 054304 (2006). [38] M. H. Hong, K. Hono, and M. Watanabe, J. Appl. Phys., 84, 4403 (1998). [39] T. Suzuki, N. Honda, and K. Ouchi, IEEE Trans. Magn., 35, 2748 (1999). [40] T. Shima and K. Takanashi, Appl. Phys. Lett. 81, 1050 (2002). [41] Zhengang Zhang, Kyongha Kang, and Takao Suzuki, J. Appl. Phys. 93, 7163 (2003). [42] K. Kang, Z. G. Zhang, T. Suzuki, and C. Papusoi, J. Appl. Phys. 95, 7273 (2004). [43] Takao Suzuki, Zhengang Zhang, Amarendra K. Singh, Jinhua Yin, Alagarsamy Perumal, and Hiroshi Osawa, IEEE Trans. Magn. 41, 555 (2005). [44] Jae-Song Kim, Yang-Mo Koo, Thin Solid Films 516, 1147–1154 (2008). [45] S. C. Chen, S. P. Chen, P. C. Kuo, Thin Solid Films 517, 5176–5180 (2009). [46] N. Zotov, R. Hiergeist, A. Savan, A. Ludwig, Thin Solid Films 518, 4977–4985 (2010). [47] J. A. Christodoulides, Y. Huang, Y. Zhang, G. C. Hadjipanayis, I. Panagiotopoulos and N. Niarchos, J. Appl. Phys. 87, 6938 (2000). [48] Y. Xu, M. L. Yan and D. L. Sellmyer, IEEE Trans. Magn. 40, 2525 (2004). [49] H. Zeng, J. Li, Z. L. Wang, J. P. Liu and S. Sun, IEEE Trans. Magn. 38, 2598 (2002). [50] X-H Xu, H-S Wu, X-L Li, F. Wang and J-F Duan, Physica B, 348, 436 (2004). [51] Y. Huang, H. Okumura, G. C. Hadjipanayis, and D. Weller, J. Magn. Magn. Mater. 242-245, 317 (2002). [52] Hyun Seok Ko, A. Perumal, and Sung-Chul Shin, Appl. Phys. Lett, 82, 2311 (2003). [53] Xiao-Hong Xu, Hai-Shun Wu, Xiao-Li Li, Fang Wang, Materials Chemistry and Physics 90, 95–98 (2005). [54] F. J. Yang, Hao Wang, H. B. Wang, X. Cao, C. P. Yang, Q. Li, M. J. Zhou, Y. M. Chong and W. J. Zhang, J. Appl. Phys. 102, 106101 (2007). [55] Y. F. Ding , J. S. Chen, E. Liu, B. C. Lim, J. F. Hu, B. Liu, Thin Solid Films 517, 2638–2647 (2009). [56] Chih-Ming, Kuo, P. C. Kuo, J. Appl. Phys., 87, 419 (2000). [57] M. Daniil and P.A. Farber, J. Magn. Magn. Mat. 246, 297 (2002). [58] W. H. Mao, X. K. Ma, H. Y. Zhang, Y. B. Chen, Y. J. He, and E. Y. Jiang, J. Appl. Phys., 95, No. 5, 2564 (2004). [59] W. B. Mi, E. Y. Jiang, and H. L. Bai, J. Appl. Phys. 99, 034315 (2006). [60] C. P. Luo, S. H. Liou, and D. J. Sellmyer, J. Appl. Phys. 87, 6941 (2000). [61] M. L. Yan, H. Zeng, N. Powers, and D. J. Sellmyer, J. Appl. Phys. 91, 8471 (2002). [62] C. P. Luo and D. J. Sellmyer, U.S. Patent No. US2001/0036562 A1, Nov.1, (2001). [63] Y. K. Takahashi, T. Ohkubo, M. Ohnuma, and K. Hono, J. Appl. Phys. 93, 7166 (2003). [64] Y. K. Takahashi, T. Koyama, M. Ohnuma, T. Ohkubo, and K. Hono, J. Appl. Phys. 95, 2690 (2004). [65] Y. Ding, S. A. Majetich, J. Kim, K. Barmak, H. Rollins, P. Sides, J. Magn. Magn. Mater., 284, 336 (2004). [66] Jinhua Yin, Amarendra K. Singh, Takao Suzuki, Fellow, IEEE, and Zhengang Zhang, IEEE Trans. Magn., 41, 3208 (2005). [67] Takao Suzuki, Zhengang Zhang, Amarendra K. Singh, Jinhua Yin, A. Perumal, and Hiroshi Osawa, J. Magn. Magn. Matter., 286, 306 (2005). [68] Y. C. Wu, L. W. Wang, and C. H. Lai, Appl. Phys. Lett., 91, 072502 (2007). [69] Y. C. Wu, L. W. Wang, and C. H. Lai, Appl. Phys. Lett. 93, 242501 (2008). [70] D. H. Wei, J. Appl. Phys., 105, 07A715 (2009). [71] F. Casoli, F. Albertini, S. Fabbrici, C. Bocchi, L. Nasi, R. Ciprian, and L. Pareti, IEEE Trans. Magn., 41, 3877 (2005). [72] F. Casoli, F. Albertini, L. Nasi, S. Fabbrici, R. Cabassi, F. Bolzoni, and C. Bocchi, Appl. Phys. Lett. 92, 142506 (2008). [73] Fang Wang, Xiaohong Xu, Yan Liang, Jing Zhang, and Haishun Wu, Appl. Phys. Lett. 95, 022516 (2009). [74] Fang Wang, Jing Zhang, Jun Zhang, and Xiao-Hong Xu, J. Appl. Phys. 109, 07B731 (2011). [75] Y. K. Takahashi, M. Ohnuma, K. Hono, J. Magn. Magn. Mater. 246, 259 (2002). [76] Tomoyuki Maeda, Tadashi Kai, Akira Kikitsu Nagase, and Jun-Ichi Akiyama, Appl. Phys. Lett. 80, 2147 (2002). [77] T. Maeda, A. Kikitsu, T. Kai, T. Nagase, and J. Akiyama, IEEE Trans. Magn. 38, 2796 (2002). [78] K. W. Wierman, C. L. Platt, J. K. Howard and F. E. Spada, J. Appl. Phys. 93, 7160-7162 (2003). [79] S. K. Chen, F. T. Yuan and T. S. Chin, J. Appl. Phys. 97, 073902 (2005). [80] B. Ma, C.L. Zha, Z.Z. Zhang, Q.Y. Jin, Thin Solid Films 518, 2163–2166 (2010). [81] http://nems.ntu.edu.tw/web_nems/document/general/NMC-W-8009_WEB.pdf. [82] http://www.panalytical.com/index.cfm?pid=33&itemid=160&contentitemid=35 [83] http://www.geobacter.org/research/nanowires/ [84] http://www.eastchanging.com/admin/cxsb/model7407.pdf [85] 國立台灣大學奈米科技研究中心網站,http://nanost.ntu.edu.tw/。 [86] J. S. Kim, Y. M. Koo, B. J. Lee, and S. R. Lee, J. Appl. Phys. 99, 053906 (2006). [87] Y. F. Ding, J. S. Chen, E. Liu, and L. Li, J. Magn. Magn. Mater. 303, e238 (2006). [88] Y. F. Ding, J. S. Chen, E. Liu, and J. P. Wang, J. Magn. Magn. Mater. 285, 443 (2006). [89] 方彥翔,國立台灣大學博士論文, p. 71,(2008). [90] A. C. Sun, S. C. Chen, P. C. Kuo, C. Y. Chou, Y. H. Fang, Jen-Hwa Hsu, H. L. Huang, and H. W. Chang, IEEE Trans. on Mag., 41, 3772 (2005). [91] B. C. Lim, J. S. Chen, and J. P. Wang, J. Magn. Magn. Mater. 271, 159 (2004). [92] J. A. Christodoulides, P. Farber, M. Daniil, H. Okumura, G. C. Hadjipanayis, V. Skumryev, A. Simopoulos, and D. Weller, IEEE Tran. Magn. 37, 1292 (2001). [93] K. Watanabe, Mater. Trans. JIM, 29, 80 (1998). [94] K. Hattar, D. M. Follstaedt, J. A. Knapp, and I. M. Robertson, Acta Materialia 56, 794 (2008). [95] T. G. Pokhil and E. N. Nikolaev, IEEE Tran. Magn. 29, 2536 (1993). [96] Y. H. Fang, P. C. Kuo, A. C. Sun, S. L. Hsu, and S. C. Chen, Thin Solid Films 517, 5181 (2009). [97] Z. L. Zhao, J. Ding, J. S. Chen, and J. P. Wang, J. Magn. Magn. Mater. 272-276, 2186 (2004). [98] I. Panagiotopoulos, S. Stavroyiannis, D. Niarchos, J. A. Christodoulides and G. C. Hadjipanayis, J. Appl. Phys. 87, 4358 (2000). [99] O. Redon and P. P. Freitas, J. Appl. Phys. 83, 2851 (1998). [100] B. M. Chen, C. H. Lai and H. P. D. Shieh, Jpn. J. Appl. Phys. 40, 4518 (2001). [101] H. Pfeiffer, Phys. Status Solidi A 118, 295 (1990). [102] D. H. Ping, M. Ohnuma, K. Hono, M. Watanabe, T. Iwasa, and T. Masumoto, J. Appl. Phys. 90, 4708 (2001). [103] Y. Z. Zhou, J. S. Chen, G. M. Chow, and J. P. Wang, J. Appl. Phys. 93, 7577 (2003). [104] B. D. Cullity, “Elements of X-ray Diffraction” (Addision Wesley, Reading, MA), 102 (1978). [105] Yingfan Xu and J. S. Chen, Appl. Phys. Lett. 80, 3325 (2002). [106] J-W. Lee, H-P. D. Shieh, M. H. Kryder, and D. E. Laughlin, J. Appl. Phys., 63, 8, 3624-3626 (1988). [107] 張炎輝、賴育誠,“高記憶密度磁性薄膜(Co-Cr-Fe-Pt-B 系列)之研究”,行政院國家科學委員會專題研究計畫成果報告,(2004). [108] Y. S. Park, K. H. Kim, J. J. Lee, H. S. Kim, T. W. Kang, H. X. Jiang, and J. Y. Lin, Journal of Materials Science 39, 1853 (2004). [109] M. F. Toney, W. Y. Lee, J. A. Hedstrom, and A. Kellock, J. Appl. Phys. 93, 9902 (2003). [110] 孫安正,國立台灣大學材料所博士論文, p151,(2005). [111] V. Y. Novikov, Acta mater. 47, 4507 (1999). [112] C. V. Thompson and R. Carel, J. Mech. Phy.Solids, 44, 657 (1996). [113] Y. K. Takahashia, K. Hono, T. Shima, K. Takanashi, J. Magn. Magn. Mater. 267, 248 (2003). [114] S. Ganesan, C. M. Park, K. Hattori, H. C. Park, R. L. White, H. Koo, and R. D. Gomez, IEEE Tran. Magn. 36, 2987 (2000). [115] S. Sun and E. E. Fullerton, D. Weller, IEEE Trans. Magn. 37, 1239 (2001). [116] Sangki Jeong and T. Ohkubo, J. Appl. Phys. 91, 6863 (2002). [117] O. A. Ovanov, L. V. Solina, and V. A. Demshima, Phys. Met. Metallogr., 35, 81 (1973). [118] J. Bai, Z. Yang, F. Wei, M. Matsumoto, A. Morisako, J. Magn. Magn. Mater., 257, 132 (2003). [119] Kiyotaka Wasa, Shigeru Hayakawa, “Handbook of sputter deposition technology: principles, technology, and applications”, William Andrew, p. 374, 1992. [120] S. W. Yung, Y. H. Chang, J. Lin, M. H. Hung, J. Magn. Magn. Mater., 116, 411 (1992). [121] H. Zeng, M. L. Yan, N. Powers, D. J. Sellmyer, Appl. Phys. Lett., 80, 2350 (2002). [122] Q. Yan, T. Kim, A. Purkayastha, P. G. Ganesan, M. Shima, and G. Ramanath, Adv. (Weinheim, Ger.) 17, 2233 (2005). [123] C. H. Lai, Y. C. Wu, and C. C. Chiang, J. Appl. Phys., 97, 10H305 (2005). [124] ASM Handbook Committee, “Metals Handbook”, vol 4, American Society For Metals, 1989. [125] 中華民國粉末冶金協會“陶瓷技術手冊”,1994. [126] V. Karanasos, I. Panagiotopoulos, D. Niarchos, H. Okumura and G. C. Hadjipanayis, J. Appl. Phys., 88(5), p.2740 (2000). [127] T. Schrefl, J. Fidler, and H. Kronmuller, Phys. Rev. B 49, 6100 (1994). [128] G. P. Zhao, H. S. Lim, Y. P. Feng, C. K. Ong, and G. R. Liu, J. Appl. Phys. 91, 2186 (2002). [129] G. P. Zhao, C. K. Ong , Y. P. Feng, H. S. Lim, and J. Ding, J. Magn. Magn. Mater. 192, 543 (1999). [130] C. K. Ong, Y. P. Feng, G. P. Zhao, H. S. Lim, and Wei Dan, J. Appl. Phys. 87, 5532 (2000). [131] G. W. Spratt, P. R. Bissell, R. W. Chantrell, E. P. Wohlfarth, J. Magn. Magn. Mater. 75, 309 (1988). [132] 詹仁宏,國立台灣科技大學碩士論文, p. 57,(2005). [133] B. K. Tay, D. Sheeja, S. P. Lau, and J. X. Guo, Diamond and Related Materials 12, 2072 (2003). [134] B. Abeles, in “Applied Solid State Science: Advances in Materials and Device Research”, edited by R. Wolfe (Academic, New York), p.1 (1976). [135] H. Y. Wang, W. H. Mao, X. K. Ma, H. Y. Zhang, Y. B. Chen, Y. J. He, and E. Y. Jiang, J. Appl. Phys. 95, 2564 (2004). [136] K. Piao, D. Li, and Dan Wei, J. Magn. Magn. Mater. 303, e39 (2006). [137] J. S. Chen, Y. Xu, and J. P. Wang: J. Appl. Phys., 93, 1661 (2002). [138] J. S. Chen, B. C. Lim, and J. P. Wang: J. Appl. Phys., 93, 8167 (2003). [139] C. H. Lai, S. H. Yang, C. C. Chiang, T. Balaji, and T. K. Tseng, Appl. Phys. Lett. 85, 4430 (2004). [140] C. H. Lai, C. C. Chiang, and C. H. Yang, J. Appl. Phys., 97, 10H310 (2005). [141] Ichiro Tamai, Ryoko Araki, and Kiwamu Tanahashi, IEEE Trans. Magn., 44(11), p3492 (2008). [142] 李紹民,國立成功大學碩士論文, p. 71,(2002). [143] W. E. Lee and G. E. Hilmas, J. Am. Ceram. Soc., 72(10) 1731-1737 (1989). [144] D. Makarov, J. Lee, C. Brombacher, C. Schubert, M. Fuger, D. Suess, J. Fidler, and M. Albrecht, Appl. Phys. Lett. 96, 062501 (2010). [145] 林季宏,國立台灣大學碩士論文, p. 60,(2006). [146] A. Y. Dobin and H. J. Richter, Appl. Phys. Lett. 89, 062512 (2006). [147] E. Girt, A. Y. Dobin, B. Valcu, H. J. Richer, X. Wu, and T. P. Nolan, IEEE Trans. Magn. 43, 2166 (2007). [148] 鐘志旻,國立聯合大學碩士論文, p. 94,(2006). [149] 陳士堃,逢甲大學碩士論文, p. 59,(2002). [150] Reed-Hill, Abbaschian, “Physical Metallurgy Principles”, third edition, 1989. [151] David R. Gaskell, “Introduction to Metallurgical Thermodynamics”, second edition, 1981. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/24728 | - |
dc.description.abstract | 本研究首先在室溫下以直流磁控濺鍍的方式,於康寧玻璃基板上鍍製具有良好垂直磁異向性之L10-FePt薄膜。接著使用直流與射頻交替濺鍍(alternative sputtering)的方式在L10-FePt薄膜內分別或同時添加不同體積百分比之SiC與SiNx,以形成具有顆粒狀(granular)結構之(FePt)100-y-(SiC)y、(FePt)100-z-(SiNx)z與(FePt)100-y-z-(SiC)y-(SiNx)z薄膜,分別探討並比較矽之碳化物(SiC)與氮化物(SiNx)對FePt薄膜之磁性質與微結構的影響。而為降低(FePt)100-y-(SiC)y與(FePt)100-z-(SiNx)z薄膜之磁頭寫入場,將分別於其上覆蓋不同厚度之Fe-SiC與Fe-SiNx顆粒狀軟磁層。此外,為降低(FePt)100-y-(SiC)y與(FePt)100-z-(SiNx)z薄膜之序化溫度,將分別於其中添加不同含量之第三合金元素Cu,期望能獲得高矯頑磁力、小晶粒尺寸、低寫入場及低序化溫度的磁記錄媒體。
15 nm之Fe59Pt41薄膜於700 oC退火30分鐘後,可得到最佳之垂直膜面角型比(S⊥)約0.91、垂直膜面矯頑磁力約21.7 kOe,較適合用於磁記錄媒體。我們將以此作為後續添加SiC與SiNx之(FePt)100-y-(SiC)y、(FePt)100-z-(SiNx)z與(FePt)100-y-z-(SiC)y-(SiNx)z顆粒狀薄膜的基礎。 (FePt)78.8(SiC)21.2薄膜經700 oC退火30分鐘後之垂直膜面矯頑磁力與垂直膜面角型比分別為20.8 kOe及0.78;(FePt)75.6(SiNx)24.4薄膜經700 oC退火60 分鐘後之垂直膜面矯頑磁力及垂直膜面角型比分別為23.5 kOe及0.92。我們將以此二種薄膜作為後續覆蓋Fe-SiC、Fe-SiNx軟磁層及添加第三合金元素Cu的基礎。其中(FePt)100-y(SiC)y與(FePt)100-z-(SiNx)z薄膜之矯頑磁力與添加量的關係可分別以SiC含量為21.2 vol.%、SiNx含量為24.4 vol.%時作為分界點而分為二階段來探討:第一階段為矯頑磁力的振盪變化、第二階段為矯頑磁力的下降。 整體而言, (FePt)100-z(SiNx)z顆粒狀薄膜之矯頑磁力皆較(FePt)100-y(SiC)y顆粒狀薄膜為佳,研判可能的原因為磁性材料FePt與非磁性材料SiC、SiNx間之表面能、晶格常數、熱膨脹係數及熱傳導係數等物理特性的差異所造成的結果。 (FePt)100-y-z-(SiC)y-(SiNx)z薄膜可提升(FePt)100-y-(SiC)y薄膜於SiC含量大於17.7 vol.%時之磁性質,且可將維持較佳磁性質之陶瓷材料的含量提升至36.5 vol.%,使磁記錄媒體更加耐磨耗、耐腐蝕與耐氧化。其中(FePt)63.5-(SiC)8.0-(SiNx)28.5薄膜經700 oC退火60分鐘後之垂直膜面矯頑磁力及垂直膜面角型比分別為22.6 kOe及0.82。 當Fe77(SiC)23軟磁層之厚度為10 nm時,可將Fe77(SiC)23/(FePt)78.8(SiC)21.2薄膜之翻轉場降低約35%左右;而當Fe71.8(SiNx)28.2軟磁層之厚度為10 nm時,可將Fe71.8(SiNx)28.2/(FePt)75.6(SiNx)24.4之翻轉場降低約33%左右,整體而言,Fe77(SiC)23/(FePt)78.8(SiC)21.2與Fe71.8(SiNx)28.2/(FePt)75.6(SiNx)24.4雙層薄膜之磁翻轉行為與軟磁層厚度之關係大致以5 nm作為分界點而分為二階段來探討:第一階段之rigid magnet磁翻轉、第二階段之exchange spring磁翻轉。 Fe77(SiC)23/(FePt)78.8(SiC)21.2與Fe71.8(SiNx)28.2/(FePt)75.6(SiNx)24.4雙層薄膜之垂直膜面矯頑磁力及垂直膜面角型比隨Fe77(SiC)23、Fe71.8(SiNx)28.2軟磁層厚度之變化趨勢一致,故推測軟/硬磁層雙層結構之磁性質變化僅與軟磁層之厚度有關而與軟磁層之種類無關,但軟磁層與硬磁層需具有相似之表面型態以利磊晶。 [(FePt)78.8-(SiC)21.2]86.1-Cu13.9薄膜經600 oC退火60 分鐘後之垂直膜面矯頑磁力及垂直膜面角型比分別為7.6 kOe及0.71;[(FePt)75.6-(SiNx)24.4]93.2-Cu6.8薄膜經600 oC退火60 分鐘後之垂直膜面矯頑磁力及垂直膜面角型比分別為8.8 kOe及0.72,且皆可有效降低序化溫度。[(FePt)78.8-(SiC)21.2]100-β-Cuβ與[(FePt)75.6-(SiNx)24.4]100-γ-Cuγ薄膜之矯頑磁力與Cu含量之關係可分別以Cu含量為7.9 vol.%、10.8 vol.%時作為分界點而分為二階段來探討: 第一階段因pinning sites之增加導致矯頑磁力上升、第二階段因形成FePtCu固溶體致使矯頑磁力下降。 | zh_TW |
dc.description.abstract | The L10-FePt films with perpendicular magnetic anisotropy were deposited on the Corning glass substrates by using direct current (dc) magnetron sputtering at ambient temperature. Then, different volume percents of silicon carbide (SiC) and silicon nitride (SiNx) were added into the L10-FePt thin films by dc and rf magnetron alternative-sputtering of Fe, Pt and SiC or SiNx targets. Thus, the (FePt)100-y-(SiC)y, (FePt)100-z-(SiNx)z and (FePt)100-y-z-(SiC)y-(SiNx)z granular nanocomposite films were obtained and investigate the effect of SiC and SiNx on the magnetic properties and microstructures of L10-FePt thin films. Since the high coercivities of (FePt)100-y-(SiC)y and (FePt)100-z-(SiNx)z granular films are not available for the magnetic head to write, the different thicknesses of Fe100-y-(SiC)y and Fe100-z-(SiNx)z granular soft layers were used to cover with (FePt)100-y-(SiC)y and (FePt)100-z-(SiNx)z granular films to reduce the writing field. Furthermore, the different contents of third alloying element Cu were added into (FePt)100-y-(SiC)y and (FePt)100-z-(SiNx)z granular films to reduce the ordering temperature. Accordingly, the magnetic recording media with moderate coercivities, small grain size, low writing field and low ordering temperature could be obtained.
The out-of-plane squareness (S⊥) and out-of-plane coercivity (Hc⊥) of 15 nm FePt film were about 0.91 and 21.7 kOe after annealing at 700 oC for 30 min, that is suitable for applying on magnetic recoding media. This 15 nm Fe59Pt41 film will be added SiC or SiNx to form the (FePt)100-y-(SiC)y, (FePt)100-z-(SiNx)z and (FePt)100-y-z-(SiC)y -(SiNx)z granular films in the further. The Hc⊥ and S⊥ values of the (FePt)78.8(SiC)21.2 film after annealing at 700 oC for 30 min are 20.8 kOe and 0.78, respectively. The Hc⊥ and S⊥ values of the (FePt)75.6(SiNx)24.4 film after annealing at 700 oC for 60 min are 23.5 kOe and 0.92, respectively. These (FePt)78.8(SiC)21.2 and (FePt)75.6(SiNx)24.4 films will be covered with Fe100-y-(SiC)y and Fe100-z-(SiNx)z soft layers to form Fe100-y-(SiC)y/(FePt)78.8(SiC)21.2 and Fe100-z-(SiNx)z/(FePt)75.6(SiNx)24.4 films, respectively, or be added Cu to form [(FePt)78.8(SiC)21.2] 100-β-Cuβ and [(FePt)75.6(SiNx)24.4]100-γ-Cuγ films in the further. The variation of coercivities with SiC and SiNx contents of (FePt)100-y(SiC)y and (FePt)100-z-(SiNx)z granular films could be separated into two gradations as the SiC content is 21.2 vol.% and the SiNx content is 24.4 vol.%. It could all be found in different annealing times. First gradation (as the SiC content is smaller than 21.2 vol.% and the SiNx content is smaller than 24.4 vol.%) is the vibration of coercivities and second gradation (as the SiC content is between 21.2 and 57.3 vol.% and the SiNx content is between 24.4 and 53.1 vol.%) is the decrease of coercivities. Totally, the coercivity of (FePt)100-z(SiNx)z granular films is higher than (FePt)100-y(SiC)y granular films at any annealing time for the same content of SiC and SiNx. This may be due to the physical differences of surface energies, lattice constants, thermal expansion coefficients and thermal conductivity coefficients between the magnetic material FePt and the non-magnetical materials SiC and SiNx. (FePt)100-y-z-(SiC)y-(SiNx)z films which added SiC and SiNx simultaneously could promote the Hc⊥ and S⊥ of (FePt)100-y(SiC)y films when SiC content is more than 17.7 vol.%. The Hc⊥ and S⊥ values of the (FePt)63.5-(SiC)8.0-(SiNx)28.5 film are 22.6 kOe and 0.82, respectively, after annealing at 700 oC for 60 min. The switching fields of the Fe77(SiC)23/(FePt)78.8(SiC)21.2 and Fe71.8(SiNx)28.2/(FePt)75.6(SiNx)24.4 films could be decreased to about 35% and 33% as the thicknesses of Fe77(SiC)23 and Fe71.8(SiNx)28.2/(FePt)75.6(SiNx)24.4 are 10 nm. The magnetic reversal of Fe77(SiC)23/(FePt)78.8(SiC)21.2 and Fe71.8(SiNx)28.2/(FePt)75.6(SiNx)24.4 films could be separated into two gradations as the thicknesses of soft layers were 5 nm. First gradation (as the thicknesses of Fe77(SiC)23 and Fe71.8(SiNx)28.2 soft layers are smaller than 5 nm) is rigid magnet and second gradation (as the thicknesses of Fe77(SiC)23 and Fe71.8(SiNx)28.2 soft layers are larger than 5 nm) is exchange spring. The variations of Hc⊥ and S⊥ values with the thicknesses of Fe77(SiC)23 and Fe71.8(SiNx)28.2 layers in Fe77(SiC)23/(FePt)78.8(SiC)21.2 and Fe71.8(SiNx)28.2/(FePt)75.6(SiNx)24.4 films are similar. Thus, the magnetic properties of soft/hard double layers are relevant to the thickness of soft layer and are irrelevant to the manners of soft layer. In order to achieve better exchange coupling effect, the soft layer and hard layer should possess similar morphology and well epitaxial growth. The Hc⊥ and S⊥ values of the [(FePt)78.8-(SiC)21.2]86.1-Cu13.9 film after annealing at 600 oC for 60 min are 7.6 kOe and 0.71, respectively. The Hc⊥ and S⊥ values of the [(FePt)75.6-(SiNx)24.4]93.2-Cu6.8 film after annealing at 600 oC for 60 min are 8.8 kOe and 0.72, respectively. After adding Cu, the ordering temperature of FePt could be decreased from 700℃ to 600℃ for both films. The variations of coercivities with Cu content of (FePt)100-y(SiC)y and (FePt)100-z-(SiNx)z granular films could be separated into two gradations as the Cu content is 7.9 vol.% and 10.8 vol.%, respectively. The increase of coercivities in first gradation (for (FePt)100-y(SiC)y and (FePt)100-z-(SiNx)z granular films, as the Cu content is smaller than 7.9 vol.% and 10.8 vol.%, respectively) is due to the pinning sites effect and the formation of single domain L10-FePt phase, and the decrease of coercivities in second gradation (for (FePt)100-y(SiC)y and (FePt)100-z-(SiNx)z granular films, as the Cu content is larger than 7.9 vol.% and 10.8 vol.%, respectively) is due to the decrease of L10-FePt nucleation sites, the formation of FePtCu solid solution and the continuous morphology. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T05:38:43Z (GMT). No. of bitstreams: 1 ntu-100-D96527024-1.pdf: 30633815 bytes, checksum: ba0cd20404ac608d64d8b41750cffdbe (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | 口試委員會審定書............................................................................................................i
誌謝...................................................................................................................................ii 中文摘要..........................................................................................................................iii 英文摘要...........................................................................................................................v 目錄................................................................................................................................viii 圖目錄........................................................................................................................... xiii 表目錄.........................................................................................................................xxvii 第一章 前言.....................................................................................................................1 第二章 理論基礎與文獻回顧.........................................................................................5 2-1理論基礎.....................................................................................................................5 2-1-1奈米磁性顆粒的特性..........................................................................................5 2-1-1-1 超順磁現象.................................................................................................5 2-1-1-2 單磁區現象.................................................................................................6 2-1-1-3 表面能效應.................................................................................................7 2-1-1-4 表面磁異向性.............................................................................................7 2-1-2 磁記錄原理.........................................................................................................8 2-1-3 水平磁記錄的限制.............................................................................................9 2-1-4垂直式磁記錄媒體............................................................................................10 2-1-5 顆粒狀磁記錄媒體...........................................................................................10 2-1-6複合式交換耦合或交換彈力記錄媒體............................................................11 2-1-7 磁記錄材料.......................................................................................................11 2-1-7-1 FePt合金的結構........................................................................................12 2-1-7-2 具垂直磁異向性之FePt合金薄膜..........................................................12 2-1-7-3 添加第三合金元素對FePt合金薄膜的影響..........................................13 2-2文獻回顧...................................................................................................................13 2-2-1垂直磁異向性FePt合金薄膜之研究...............................................................13 2-2-2顆粒狀磁性記錄薄膜之研究............................................................................16 2-2-2-1 碳化物對FePt合金薄膜之影響...............................................................16 2-2-2-2 氮化物對FePt合金薄膜之影響..............................................................18 2-2-2-3 氧化物對FePt合金薄膜之影響..............................................................19 2-2-3 複合式交換耦合或交換彈力耦合磁記錄媒體...............................................21 2-2-4 添加第三合金元素對FePt合金薄膜的影響..................................................22 2-3研究方向...................................................................................................................24 第三章 實驗方法與步驟.............................................................................................34 3-1實驗流程...................................................................................................................34 3-2 濺鍍實驗裝置..........................................................................................................35 3-3 靶材選取..................................................................................................................35 3-3-1 金屬靶材...........................................................................................................35 3-3-2 陶瓷靶材...........................................................................................................35 3-4 基板選取與基板清洗..............................................................................................35 3-4-1 基板選取...........................................................................................................35 3-4-2 基板清洗...........................................................................................................36 3-5薄膜濺鍍步驟...........................................................................................................36 3-6薄膜熱處理步驟.......................................................................................................37 3-7樣品分析...................................................................................................................37 3-7-1晶相分析............................................................................................................37 3-7-2膜厚量測及表面型態分析................................................................................38 3-7-3成分分析............................................................................................................38 3-7-4微結構分析........................................................................................................38 3-7-4-1 場發射鎗掃描式電子顯微鏡(FEG-SEM) ..............................................38 3-7-4-2 場發射鎗穿透式電子顯微鏡(FEG-TEM) ..............................................38 3-7-5磁性質分析........................................................................................................40 3-7-5-1 Vibrating Sample Magnetometer (VSM) ...................................................40 3-7-5-2 Superconducting Quantum Interference Device (SQUID)….....................40 第四章 實驗結果與討論...............................................................................................52 4-1 L10-FePt合金薄膜....................................................................................................52 4-1-1 Fe濺鍍功率密度對L10-FePt合金薄膜指向性的影響...................................53 4-1-2 Fe濺鍍功率密度對L10-FePt合金薄膜序化程度的影響...............................54 4-1-3 Fe濺鍍功率密度對L10-FePt合金薄膜磁性質的影響...................................55 4-1-3-1 Fe濺鍍功率密度與矯頑磁力的關係........................................................55 4-1-3-2 Fe濺鍍功率密度與角型比的關係............................................................56 4-1-4 Fe濺鍍功率密度對L10-FePt合金薄膜晶粒尺寸的影響...............................56 4-1-5 薄膜厚度與退火溫度對L10-FePt合金薄膜指向性的影響...........................57 4-1-6 薄膜厚度對L10-FePt合金薄膜序化程度的影響...........................................59 4-1-7 薄膜厚度對L10-FePt合金薄膜晶粒尺寸的影響...........................................60 4-1-8 薄膜厚度與退火溫度對L10-FePt合金薄膜磁性質的影響...........................60 4-1-8-1 薄膜厚度對L10-FePt合金薄膜矯頑磁力的影響....................................61 4-1-8-2 薄膜厚度對L10-FePt合金薄膜角型比的影響........................................62 4-1-9 薄膜厚度對L10-FePt合金薄膜顯微結構之影響...........................................63 4-2 FePt-SiC顆粒狀合金薄膜........................................................................................65 4-2-1 碳化矽(SiC)材料..............................................................................................65 4-2-2 SiC體積分率對FePt- SiC薄膜指向性與磁性質之影響................................66 4-2-3 退火時間對FePt-SiC薄膜磁性質的影響.......................................................72 4-2-4 SiC體積分率對FePt-SiC薄膜晶粒尺寸之影響.............................................73 4-2-5 SiC體積分率對FePt-SiC薄膜微結構之影響.................................................74 4-2-6 SiC體積分率對FePt- SiC薄膜之磁交互作用的影響....................................76 4-3 FePt-SiNx顆粒狀合金薄膜......................................................................................78 4-3-1 氮化矽(SiNx) ...................................................................................................78 4-3-2 SiNx體積分率對FePt- SiNx薄膜指向性與磁性質之影響..............................78 4-3-3 退火時間對FePt-SiNx薄膜磁性質的影響......................................................82 4-3-4 SiNx體積分率對FePt-SiNx薄膜晶粒尺寸之影響...........................................83 4-3-5 SiNx體積分率對FePt-SiNx薄膜微結構之影響..............................................83 4-3-6 SiNx體積分率對FePt- SiNx薄膜之磁交互作用的影響..................................85 4-4 (FePt)100-y-(SiC)y與(FePt)100-z-(SiNx)z顆粒狀薄膜磁性質之比較..........................86 4-5 (FePt)100-y-z-(SiC)y-(SiNx)z顆粒狀薄膜....................................................................89 4-5-1 SiNx體積分率對(FePt)100-y-z-(SiC)y-(SiNx)z薄膜指向性與磁性質之影響.....89 4-5-2 SiNx體積分率對(FePt)100-y-z-(SiC)y-(SiNx)z薄膜微結構之影響.....................91 4-5-3 SiC體積分率對(FePt)100-y-z-(SiC)y-(SiNx)z薄膜指向性與磁性質之影響......91 4-5-4 SiC體積分率對(FePt)100-y-z-(SiC)y-(SiNx)z薄膜微結構之影響......................92 4-5-5 (FePt)100-y-z-(SiC)y-(SiNx)z薄膜(y=12.0、17.0、24.0 vol.%; z=12.0、17.0、24.0 vol.%)..............................................................................................................................93 4-5-6 (FePt)52.0-(SiC)24.0-(SiNx)24.0薄膜之微結構......................................................93 4-5-7 (FePt)100-α-[(SiC)y-(SiNx)z]α薄膜(α=y+z=9.1~49.0 vol.%)...............................94 4-5-8 (FePt)100-y-z-(SiC)y-(SiNx)z薄膜之磁交互作用的影響.....................................95 4-5-9 (FePt)100-y-(SiC)y、(FePt)100-z-(SiNx)z 與(FePt)100-y-z-(SiC)y-(SiNx)z薄膜磁性質之比較.............................................................................................................................95 4-6 Fe100-y-(SiC)y/(FePt)100-y-(SiC)y與Fe100-z-(SiNx)z/(FePt)100-z-(SiNx)z雙層顆粒狀薄膜.....................................................................................................................................97 4-6-1 Fe77(SiC)23/(FePt)78.8(SiC)21.2雙層顆粒狀薄膜...............................................97 4-6-1-1 Fe77(SiC)23軟磁層厚度對(FePt)78.8(SiC)21.2薄膜指向性與磁性質之影響.....................................................................................................................................98 4-6-1-2 Fe77(SiC)23軟磁層厚度對(FePt)78.8(SiC)21.2薄膜微結構之影響...........101 4-6-2 Fe100-z-(SiNx)z/(FePt)100-z-(SiNx)z雙層顆粒狀薄膜.........................................101 4-6-2-1 Fe71.8(SiNx)28.2軟磁層厚度對(FePt)75.6(SiNx)24.4薄膜指向性與磁性質之影響...............................................................................................................................101 4-6-2-2 Fe71.8(SiNx)28.2軟磁層厚度對(FePt)75.6(SiNx)24.4薄膜微結構之影響....103 4-6-2-3 Fe71.8(SiNx)28.2/(FePt)75.6(SiNx)24.4薄膜之磁交互作用............................103 4-6-3 Fe77(SiC)23/(FePt)78.8(SiC)21.2與Fe71.8(SiNx)28.2/(FePt)75.6(SiNx)24.4薄膜磁性質之比較...........................................................................................................................104 4-7 [(FePt)100-y-(SiC)y]100-β-Cuβ與[(FePt)100-z-(SiNx)z]100-γ-Cuγ顆粒狀薄膜................105 4-7-1 [(FePt)78.8-(SiC)21.2]100-β-Cuβ顆粒狀薄膜........................................................105 4-7-1-1 退火溫度及時間對[(FePt)78.8-(SiC)21.2]100-β-Cuβ薄膜(β=0~17.6 vol.%)指向性與磁性質之影響...................................................................................................105 4-7-1-2 Cu體積分率對(FePt)78.8-(SiC)21.2薄膜微結構之影響...........................111 4-7-1-3 Cu體積分率對(FePt)78.8-(SiC)21.2薄膜之磁交互作用的影響...............111 4-7-2 [(FePt)75.6-(SiNx)24.4]100-γ-Cuγ顆粒狀薄膜......................................................112 4-7-2-1退火溫度及時間對[(FePt)75.6-(SiNx)24.4]100-γ-Cuγ薄膜(γ=0~26.4 vol.%)指向性與磁性質之影響...................................................................................................112 4-7-2-2 Cu體積分率對(FePt)75.6-(SiNx)24.4薄膜微結構之影響..........................115 4-7-2-3 Cu體積分率對(FePt)75.6-(SiNx)24.4薄膜之磁交互作用的影響..............115 4-7-3 [(FePt)78.8-(SiC)21.2]100-β-Cuβ與[(FePt)75.6-(SiNx)24.4]100-γ-Cuγ薄膜磁性質之比較...................................................................................................................................116 第五章 結論.................................................................................................................221 參考文獻.......................................................................................................................228 研究著作.......................................................................................................................235 | |
dc.language.iso | zh-TW | |
dc.title | 鐵鉑添加陶瓷材料之顆粒狀薄膜的磁性質及微結構研究 | zh_TW |
dc.title | Study of magnetic properties and microstructures of ceramic materials dopped FePt granular thin films | en |
dc.type | Thesis | |
dc.date.schoolyear | 99-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 黃暉理,陳政維,林昭吟,任盛源,陳勝吉 | |
dc.subject.keyword | 鐵鉑,顆粒狀,薄膜,垂直膜面矯頑磁力,垂直膜面角型比, | zh_TW |
dc.subject.keyword | FePt,granular,films,out-of-plane coercivity,out-of-plane squareness, | en |
dc.relation.page | 244 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2011-07-26 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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