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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 郭博成(Po-Cheng Kuo) | |
| dc.contributor.author | Chien-Ming Wang | en |
| dc.contributor.author | 王健名 | zh_TW |
| dc.date.accessioned | 2021-06-08T05:35:09Z | - |
| dc.date.copyright | 2011-08-04 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-07-27 | |
| dc.identifier.citation | 參考文獻
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/24653 | - |
| dc.description.abstract | 本研究在常溫下利用dc磁控濺鍍沈積具有顆粒狀奈米晶之Co80Pt20(50nm)薄膜於Ru(30nm)/Cu(100nm)/Glass基板上，初鍍薄膜之垂直方向頑磁力Hc⊥值高達5460 Oe且垂直方向角型比S⊥可達0.85。研究發現，若直接將Co80Pt20薄膜成長於未引入Cu底層之Ru(30nm)/glass基板上，薄膜會呈現水平磁異向性，其水平方向頑磁力Hc//值僅1560 Oe。這是因為FCC Cu(111)底層可以促進HCP Ru(0002)中間層之磊晶成長，進而誘發HCP Co80Pt20磁性層之(0002)從優取向，使整體薄膜呈現垂直磁異向性及高垂直硬磁性質。橫截面TEM影像顯示，Co80Pt20磁性層呈現奈米晶柱狀結構，平均柱寬約為10 nm，此與平面TEM影像所觀察之晶粒大小大致吻合。
進一步將Co80Pt20/Ru/Cu/Glass 多層膜置於1 mTorr的真空度下施以300℃低溫退火30分鐘後，薄膜之垂直方向頑磁力Hc⊥及垂直方向角型比S⊥可進一步提升至6980 Oe及0.88，這些性質具備應用於超高密度垂直磁記錄媒體(PMR)的潛力。 | zh_TW |
| dc.description.abstract | Granular Co80Pt20 nano-grains with perpendicular coercivity of 5460 Oe and perpendicular squareness of 0.85 has been successfully prepared by dc sputtering Co80Pt20 (50nm) film onto Ru(30nm)/Cu(100nm)/Glass substrate at ambient temperature. The Co80Pt20 film deposited directly onto Ru layer in the absence of a Cu underlayer exhibits an in-plane magnetic anisotropy with a low in-plane coercivity of 1560 Oe. This is because a fcc Cu (111) underlayer can promote hcp Ru (0002) seed layer to help induce (002) texture in hcp Co80Pt20 magnetic layer, leading to good perpendicular magnetic anisotropy and high perpendicular hard magnetic properties of the Co80Pt20 films. TEM cross-sectional images show that the columnar nano-grains with average width of 10 nm are observed in Co80Pt20 magnetic layer, which is consistent with the observation of TEM plane-view images.
When post-annealed the Co80Pt20/Ru/Cu/Glass multi-layer films in a vacuum of 1 mTorr at a lower temperature of 300°C for 30 min, both the perpendicular coercivity and perpendicular squareness of the film can be further increased to 6980 Oe and 0.88 respectively. The film may serve as an excellent candidate for perpendicular magnetic recording (PMR) media. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T05:35:09Z (GMT). No. of bitstreams: 1 ntu-100-R98527026-1.pdf: 6716546 bytes, checksum: b5e25b27c4a5bc21a98c32ac0b234c78 (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | 目錄
口試委員審定書……………………………………………………………………… I 誌謝………………………………………………………………………………….. II 中文摘要……………………………………………………………………………. III 英文摘要…………………………………………………………………………… IV 目錄…………………………………………………………………………………... V 圖目錄…………………………………………………………………………….. VIII 表目錄…………………………………………………………………………….. XVI 第一章 前言…………………………………………………………………………. 1 第二章 理論基礎與文獻回顧………………………………………………………. 3 2-1理論基礎 3 2-1-1 磁記錄技術 3 2-1-2 水平磁記錄及垂直磁記錄 3 2-1-3 磁記錄材料的熱穩定性 4 2-1-4 高磁晶異向性常數媒體材料 6 2-1-5 Co3Pt合金結構 7 2-1-6 Co3Pt合金薄膜的優點 7 2-1-7 Co3Pt奈米多層薄膜鍍膜技術 8 2-1-6 Co3Pt合金薄膜產生垂直磁異向性的方法 8 2-1-7 底層高溫製程、Co3Pt合金薄膜的後退火處理 10 2-2文獻回顧 10 2-2-1 Co3Pt高磁晶異向性薄膜-Co3Pt/substrate 11 2-2-2 Co3Pt高磁晶異向性薄膜-Co3Pt/Pt/substrate 13 2-2-3 Co3Pt高磁晶異向性薄膜-Co3Pt/Cu/substrate 14 2-2-4 Co3Pt高磁晶異向性薄膜-Co3Pt/M/substrate 14 2-2-5 Co3Pt高磁晶異向性薄膜-Co3Pt/underlayer/seedlayer/substrate 15 2-2-6 Co3Pt高磁晶異向性薄膜 -Co3Pt/underlayer/seedlayer or buffer layer/Ta/substrate 17 2-3 研究方向 19 第三章 實驗方法 28 3-1實驗流程 28 3-2 基板製備 29 3-2-1 基板選取 29 3-2-2 基板清洗 29 3-3 靶材選取 30 3-3-1 底層靶材 30 3-3-2 磁性層靶材 30 3-4 實驗裝置及薄膜製備 30 3-4-1 實驗裝置 30 3-4-2 Co80Pt20/Ru/Cu/Glass薄膜濺鍍 31 3-4-3 熱處理 32 3-5 試片分析 32 3-5-1 薄膜組成分析 32 3-5-2 α-step膜厚測定 33 3-5-3 XRD結構分析 33 3-5-4 TEM微結構觀察 34 一. 穿透式電子顯微鏡 plane-view試片準備過程： 34 二. 穿透式電子顯微鏡橫截面(cross-sectional)試片準備過程： 34 3-5-5 Vibrating Sample Magnetometer(VSM)磁性量測 35 第四章 結果與討論 39 4-1 Co80Pt20/Glass薄膜之製作 39 4-1-1不同磁性層Co80Pt20厚度對Co80Pt20/Glass薄膜之磁性質影響 39 4-1-2不同磁性層Co80Pt20厚度對Co80Pt20/Glass薄膜之微結構影響 40 4-2 Co80Pt20/Cu/Glass薄膜之製作 40 4-2-1 Cu底層厚度對Co80Pt20/Cu/Glass薄膜性質之影響 41 4-2-1-a VSM磁性質分析 41 4-2-1-b XRD微結構分析 42 4-2-2 Co80Pt20磁性層厚度對Co80Pt20/Cu/Glass薄膜性質之影響 43 4-2-2-a VSM磁性質分析 43 4-2-2-b XRD微結構分析 44 4-2-3 Cu底層濺鍍功率對Co80Pt20/Cu/Glass薄膜性質之影響 45 4-2-3-a VSM磁性質分析 45 4-2-3-b XRD微結構分析 46 4-2-4 Cu底層濺鍍氬壓對Co80Pt20/Cu/Glass薄膜性質之影響 47 4-2-4-a VSM磁性質分析 47 4-2-4-b XRD微結構分析 48 4-2-5 Cu底層基板溫度對Co80Pt20/Cu/Glass薄膜性質之影響 49 4-2-5-a VSM磁性質分析 50 4-2-5-b XRD 微結構分析 51 4-3 Co80Pt20/Ru/Cu/Glass薄膜之製作 51 4-3-1 Ru中間層厚度對Co80Pt20/Ru/Cu/Glass薄膜性質之影響 52 4-3-1-a VSM磁性質分析 52 4-3-1-b XRD微結構分析 55 4-3-2 Ru中間層於不同基板溫度鍍製對Co80Pt20/Ru/Cu/Glass薄膜性質之影響 56 4-3-2-a VSM磁性質分析 56 4-3-2-b XRD微結構分析 57 4-3-3 Ru中間層於不同退火溫度對Co80Pt20/Ru/Cu/Glass薄膜性質之影響 58 4-3-3-a VSM磁性質分析 59 4-3-3-b XRD微結構分析 60 4-4 Ru中間層與Cu底層對Co80Pt20合金薄膜之HCP(0002)從優取向磊晶效果比較 60 4-5 300℃後退火對Co80Pt20/Ru/Cu/glass多層膜之磁性質與微結構影響 62 第五章 結論………………………………………………………………………. 100 參考文獻…………………………………………………………………………... 102 | |
| dc.language.iso | zh-TW | |
| dc.subject | Cu底層 | zh_TW |
| dc.subject | Ru中間層 | zh_TW |
| dc.subject | Co-rich Co-Pt合金薄膜 | zh_TW |
| dc.subject | 垂直磁異向性 | zh_TW |
| dc.subject | 奈米柱狀晶 | zh_TW |
| dc.subject | 退火 | zh_TW |
| dc.subject | perpendicular magnetic anisotropy | en |
| dc.subject | annealing | en |
| dc.subject | Cu underlayer | en |
| dc.subject | Ru intermediate layer | en |
| dc.subject | Co-rich Co-Pt alloy thin film | en |
| dc.title | Ru中間層與Cu底層對Co80Pt20合金薄膜之顯微結構與磁性質研究 | zh_TW |
| dc.title | Investigating the influence of Ru intermediate layer and Cu underlayer on the microstructures and magnetic properties of Co80Pt20 alloy thin film | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃暉理(Huei-Li Huang),陳勝吉(Sheng-Chi Cheng) | |
| dc.subject.keyword | Cu底層,Ru中間層,Co-rich Co-Pt合金薄膜,垂直磁異向性,奈米柱狀晶,退火, | zh_TW |
| dc.subject.keyword | Cu underlayer,Ru intermediate layer,Co-rich Co-Pt alloy thin film,perpendicular magnetic anisotropy,annealing, | en |
| dc.relation.page | 106 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2011-07-27 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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