利用原子層沉積技術提升奈米級粗紋化矽晶太陽能電池效率之研究

Abstract

本論文研究利用原子層沉積(Atomic Layer Deposition, ALD)技術應用於提升奈米級粗紋化矽晶太陽能電池效率。我們在矽晶表面製作奈米級粗紋化結構，在太陽光譜下產生較低之反射率，使得矽晶片的表面呈現黑色，我們稱之為黑色矽晶片。由於ALD技術可精確沉積單一原子層厚度之薄膜，為現今最先進之奈米薄膜沉積技術，因此近年來，ALD技術逐漸受到學術界與產業界廣泛的重視。ALD技術具有(1)原子等級控制材料的形成；(2)精準控制薄膜的厚度與成分；(3)大面積與批次型量產；(4)優異的均勻度；(5)優異的三維包覆性；(6)無孔洞結構、缺陷密度小；以及(8)沈積溫度較低等優點。本論文將原子層沉積技術與黑色矽晶片技術相結合，以提高黑色矽晶片太陽能電池元件的效率，效率分別可達14.43%與17.24%。

In this thesis, we report the efficiency enhancement of nanotextured silicon solar cells by atomic layer deposition (ALD). Nanotextured structures were fabricated on the surface on silicon substrates to reduce the reflectance. Thus the silicon wafers exhibit very low reflectance in sunlight spectrum and are called “black silicon wafers”. ALD technique offers many advantages, including easy and accurate thickness control, excellent conformality, low defect density, high uniformity over a large area, good reproducibility, and low growth temperatures. Nanotextured silicon wafers together with the ALD techniques were applied to enhance the efficiency of silicon solar cells in this study. Efficiencies up to to 14.43% and 17.24% were realized in the nanotextured silicon solar cells, respectively.