銅銦鎵硒及非晶矽基薄膜太陽能電池之缺陷效應

Abstract

本論文中，利用光激發光、外部量子效率和電壓電流量測去探討缺陷對銅銦硒鎵和非晶矽基薄膜太陽能電池的效應。 首先，銅銦鎵硒薄膜太陽能電池之光激發光特性顯示出與缺陷能階相關的躍遷，並可進一步分析出施體能階與受體能階。由於缺陷會造成銅銦鎵硒太陽能電池的短路電流溫度係數為負值，導致高溫下的效率變小。 在銅銦鎵硒薄膜太陽能電池製程上，需要很多到切割去完成，而這些粗糙切割都可能會在界面上產生許多複合中心。因此，我們試著利用原子層沉積技術在薄膜上沉積一層氧化鋁，以達到鈍化的效果。 在非晶矽基薄膜太陽能電池中，由於照光所產生的劣化是一個相當重要的課題。為了探討出非晶矽基薄膜太陽能電池的生命週期，我們做了一些可靠度的研究，另外，在利用施加外部偏壓的方式，讓原先由於照光所產生的劣化可以回復之前的效率。

In this thesis, the photoluminescence, external quantum efficiency and J-V curve measurement are used to characterize defect information for Cu(In,Ga)Se2 and α-Si based thin film solar cells. First, the photoluminescence of defect-related Cu(In,Ga)Se2 thin film solar cells show the donor-acceptor transition and band-impurity transition. The donor level and acceptor level can be extracted. The negative temperature coefficient of the short circuit current of Cu(In,Ga)Se2 solar cells may cause more degradation of power conversion efficiency at high temperature due to defects. In CIGS thin film solar cell standard process, it needs many patterning to complete process. The edge of the patterning is very rough and may have a lot of recombination in surface region. For the reason, atomic layer deposited (ALD) Al2O3 is used to passivated the CIGS and the effect of the passivation. For α-Si based solar cells, light-induced degradation is a significant issue. In order to investigate the lifetime of the α-Si based solar cells, we have to do reliability test.