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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林金福 | |
dc.contributor.author | Hsiao-Chi Hsieh | en |
dc.contributor.author | 謝孝基 | zh_TW |
dc.date.accessioned | 2021-06-08T03:44:15Z | - |
dc.date.copyright | 2019-05-10 | |
dc.date.issued | 2019 | |
dc.date.submitted | 2019-04-18 | |
dc.identifier.citation | [1] http://e-info.org.tw/node/118418
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/21728 | - |
dc.description.abstract | 本論文分別利用溶膠凝膠法和超音波輔助噴霧裂解法製作電子傳導層,再利用旋轉塗佈法製作吸光層,依序沉積在導電玻璃上。隨後塗佈上改良的電洞傳導層,以製備一N-I-P層狀結構之鈣鈦礦太陽能電池元件。本研究首先利用醌型結構(DIQ-C12)取代傳統小分子電洞傳導層材料(spiro-OMeTAD),改善spiro-OMeTAD在紅光波段吸收較弱及低成膜性等缺點。再利用二維結構之聚噻吩(PBTTTV-h)取代高分子電洞傳導層材料,試著減少電洞傳導材料層與鈣鈦礦吸光層之能障差,探討PBTTTV-h對太陽能電池元件之光電轉換效率的影響。在本研究中,分別利用掃描式電子顯微鏡、X光繞射儀、紫外-可見分光光度法、表面功函數量測儀觀察材料結構及其特性。時間解析光激螢光、電化學阻抗頻譜、電荷式深能階暫態能譜等分析方法觀察太陽能電池元件之光電特性與缺陷密度分佈狀況。
本研究主要可分成四個部份。其一,分別利用溶膠凝膠法和超音波輔助噴霧裂解法製作鈦氧化物(TiO2)電子傳導層,探討不同電子傳導層之製程方法對鈣鈦礦吸光層的影響。發現用超音波輔助噴霧裂解法形成之TiO2層,具有高緻密性及低孔隙度之特色,可助鈣鈦礦吸光層形成大顆粒的晶粒,進而減少鈣鈦礦吸光層與電子傳導層及電洞傳導層間的介面電阻值。同時亦提升其光電轉換效率到~16.13%。 其二,利用醌型結構取代傳統小分子電洞傳導層材料(spiro-OMeTAD)。結果發現DIQ-C12可增強太陽能電池元件在500~600奈米波段之光源吸收能力,且電洞傳導層之厚度可減少到150奈米,為傳統小分子電洞傳導層之一半。其光電轉換效率最高可達12.22%。 其三,利用具二維結構之聚噻吩取代傳統高分子電洞傳導層材料(P3HT)。其鈣鈦礦吸光層、PBTTTV-h和P3HT之功函數分別為5.30 eV、4.94 eV和4.80 eV。因鈣鈦礦吸光層與PBTTTV-h之功函數較為相近,可提高約0.13 eV開環電壓。又PBTTTV-h結構塗佈於鈣鈦礦層時,結構排列更趨近face-on,可助於電洞傳輸之能力。光電轉換效率可提升到14.8%。元件在高相對濕度(~90%)環境中測試一天,仍可維持其85%之光電轉換效率。 其四,利用電荷式深能階暫態能譜觀察不同電洞傳導材料層內部及其與鈣鈦礦吸光層之界面的缺陷密度分佈。其中發現PBTTTV-h電洞傳導層內部和與吸光層之界面上,均具有較低的陷域濃度。推測此可能為導致低電荷捕捉及再複合速率之因素,進而降低太陽能電池元件遲滯現象之產生和提高元件性能。 | zh_TW |
dc.description.abstract | In this dissertation, electron transport layers were respectively deposited on the conductive glass by sol-gel (SG) and ultrasonic spray pyrolysis (USP) methods. Then, light-absorbing layers and hole transport layers were sequentially deposited by the spin-coating method. Perovskite solar cells in an N-I-P structure were fabricated based on the proper parameters. The heterocyclic quinoid-based hole transporting materials (HTMs) with a rigid quinoid core [3,6-di(2H-imidazol-2-ylidene)-cyclohexa-1,4-diene] were first utilized to replace the common small molecular HTM (2,2’,7,7’-tetrakis-(N,N-di-4-methoxyphenylamino)-9,9’-spirobifluorene, spiro-OMeTAD) to improve the absorption in the near-infrared region and film-formation properties. Later, the two dimensional conjugated polymer, PBTTTV-h, was utilized to replace the common polymeric HTM (poly(3-hexylthiophene-2,5-diyl), P3HT) to improve photovoltaic properties. Material characterizations are conducted by the scanning electron microscope, X-ray diffractometer, UV/VIS spectrophotometer, and photoelectron spectroscopy. The photovoltaic performances and defect distribution were examined by the time-resolved photoluminescence, electrochemical impedance spectroscopy, and charge-based deep level transient spectroscopy.
This dissertation consists of four parts. In the first part, the compact TiO2 layer was deposited on the conductive glass by SG and USP method, respectively. According to my investigation, the titanium dioxide layer prepared by USP method has the ultra-compact, bulk-like film, which is helpful to assist the formation of large crystallite grains of perovskite layer on compact TiO2 and reduce the interfacial resistances between the perovskite layer and compact TiO2. Therefore, the power conversion efficiency (PCE) of TiO2-USP devices was improved to 16.13%. In the second part, the DIQ-C12 was utilized to replace the common small-molecule HTM (spiro-OMeTAD). Depending on my investigation, the DIQ-C12 was found to possess very intense absorption in the 500-600 nm region, and the thickness of the hole transport layer in DIQ-C12-based devices can be reduced to ~150 nm, which is one half of the common small-molecule hole transport layer. Besides, the PCE of DIQ-C12-based devices was improved to 12.22%. In the third part, a conjugated polythiophene with a two-dimensional conjugated structure was utilized to replace the poly(3-hexylthiophene-2,5-diyl) (P3HT). The work functions (WFs) of the perovskite, PBTTTV-h, and P3HT were 5.30 eV, 4.94 eV, and 4.80 eV, respectively. The WF of perovskite layer is much close to that of PBTTTV-h, thus increased the VOC (near 1 V). The PBTTTV-h layer, which was prepared by spin coating on perovskite surface, was self-assembled into an ordered structure with a face-on orientation, which can improve the hole transport capability. The PCE of PBTTTV-h-based devices was improved to 14.8%. In the fourth part, the defect distribution in the intrinsic layers of several HTMs and their perovskite/HTM interfaces was examined by the charge-based deep level transient spectroscopy. The lowered defect concentration, which was found at intrinsic PBTTTV-h layer and the perovskite/PBTTTV-h interface, may be associated with the lowered charge trapping and recombination rate, hence reduced hysteresis phenomenon and improved photovoltaic performances. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T03:44:15Z (GMT). No. of bitstreams: 1 ntu-108-D00527011-1.pdf: 5992352 bytes, checksum: 6e861fa5b0bbadf21cfa252815aa2184 (MD5) Previous issue date: 2019 | en |
dc.description.tableofcontents | CONTENTS
誌謝 I 摘要 III ABSTRACT V CONTENTS VIII LIST OF FIGURES XI LIST OF TABLES XVIII Chapter 1 Preface 1 1.1 Global Crisis and Solar Cells 1 1.2 Solar Cell Basics 2 1.3 History of Perovskite Solar Cells 6 1.3.1 From Dye-Sensitized Solar Cells to Perovskite Solar Cells 6 1.3.2 From Complex Nanostructures to Planar Heterojunction 18 1.3.3 Defect Analysis of Solar Cells 21 1.4 Motivation 23 Chapter 2 Experiments 26 2.1 Materials 26 2.2 Instruments 29 2.3 Material Synthesis 31 2.4 Device Fabrication 33 2.4.1 Preparation of FTO Glass 33 2.4.2 Preparation of Dense TiO2 Thin Film 34 2.4.3 Preparation of Perovskite Thin Film 35 2.4.4 Preparation of HTM and Au Thin Film 36 2.4.5 Characterization of Devices 38 Chapter 3 Ultra-Compact Titanium Oxide Prepared by Ultrasonic Spray Pyrolysis Method for Planar Heterojunction Perovskite Hybrid Solar Cells 42 3.1 Background 42 3.2 Results and Discussion 43 3.2.1 Physical Properties of TiO2-SG and TiO2-USP Devices 43 3.2.2 Photovoltaic Performances of of TiO2-SG and TiO2-USP Devices 52 3.3 Summary 58 Chapter 4 Small Heterocyclic Quinoid-Based Molecules as Hole Transporting Materials for Efficient Organometal Triiodide Perovskite Solar Cells 60 4.1 Background 60 4.2 Results and Discussion 62 4.2.1 Optical, Photoelectrical, and Thermal Properties of DIP-based and DIQ-based Compounds 62 4.2.2 Theoretical Calculation of DIP-based, DIQ-based, and Spiro-OMeTAD Compounds 69 4.2.3 Physical Properties, Microscopic Investigation, and Photovoltaic Performance of DIP-based, DIQ-based, and Spiro-OMeTAD Perovskite Solar Cells 72 4.3 Summary 87 Chapter 5 Two-dimensional Wide-Bandgap Conjugated Polymer as Hole Transport Material for High-Performance Planar Heterojunction Perovskite Solar Cells 89 5.1 Background 89 5.2 Results and Discussion 92 5.2.1 Physical Properties and Microscopic Investigation of P3HT and PBTTTV-h 92 5.2.2 Photovoltaic Performance, Photoelectrical Property and Long-term Stability of P3HT-Based and PBTTTV-h-Based Organometal Triiodide Perovskite Solar Cells 99 5.3 Summary 105 Chapter 6 Analysis of Defects and Traps in N-I-P Layered-Structure of Perovskite Solar Cells by Charge-Based Deep Level Transient Spectroscopy (Q-DLTS) 107 6.1 Background 107 6.2 Results and Discussion 110 6.2.1 Physical Properties and Photovoltaic Performance of P3HT-Based, PBTTTV-h-Based, and Spiro-OMeTAD-Based Devices 110 6.2.2 Defects and Optical Properties of P3HT-Based, PBTTTV-h-Based, and Spiro-OMeTAD-Based Devices 114 6.3 Summary 134 Chapter 7 Conclusion 136 References 141 Appendix 158 LIST OF FIGURES Fig. 1-1 Spectrum of the standard simulated solar light. 3 Fig. 1-2 J-V curve of solar cells. 4 Fig. 1-3 The working mechanism of DSSC. 7 Fig. 1-4 The molecular structures of porphyrin dyes. (up) The electron lifetime based on J-V decay measurements of a YD2-based and YD2-o-C8-based devices. (down) 8 Fig. 1-5 (a) The molecular structure of C220. (b) Electron life (solid squares and circles) and transport time (open squares and circles) obtained by J-V decay measurement under 1 sun illumination. 9 Fig. 1-6 Two mechanisms of photon-to-electron conversion with a solid-state DSSC with a structure of porous TiO2/organic dye/P3HT: (1) dye-regenerating, (2) electron-mediating. 11 Fig. 1-7 (a) Chemical structures and energy levels of HRS-1 and H-01. (b) IPCE spectrum of H-01 and its device. (c) IPCE spectrum of HRS-01 and its device. 12 Fig. 1-8 (a) Energy levels (left), absorbance (middle), and IPCE spectrum (right) of Sb2S3-based device. (b) Chemical structure (left), and absorbance (middle) of D131. IPCE spectrum (right) of D131-based device. 13 Fig. 1-9 (a) Crystal structure of CH3NH3PbX3. (b) UV-vis absorption spectra of CH3NH3Pb(I1-xBrx)3 (0 ≦ x ≦ 1). (c) Crystal structures of tetragonal (left) and cubic (right) phases. 14 Fig. 1-10 Crystal structures and thin-film colors of CH3NH3PbI3 and CH3NH3PbBr3. (a) distorted tetragonal perovskite structure (b) cubic perovskite structure. 16 Fig. 1-11 J-V curves (left) and EQE spectrum (right) of PSCs with (CH3NH3)PbI3-sensitized TiO2 films based on the different concentration of (CH3NH3)PbI3 precursor solution. 16 Fig. 1-12 Cross-sectional SEM image (left) and photovoltaic performances (right) of a PSC with a structure of FTO/compact TiO2/porous TiO2:(CH3NH3)PbI3/spiro-OMeTAD/Au. 17 Fig. 1-13 The working mechanisms of the TiO2- and Al2O3-based devices. 19 Fig. 1-14 Cross-sectional SEM image (left) and J-V curve (right) of the PSC with low-temperature processed meso-superstructure Al2O3. 19 Fig. 1-15 Top-viewed SEM images with perovskite thin films prepared by (a) a vapour deposition and (b) a solution-processed deposition. (c) Device structure of a typical planar heterojunction PSC. (d) J-V curves of the champion cells prepared by solution-processed (blue lines) and vapour-deposited (red lines) planar heterojunction PSCs measured under simulated one sunlight irradiance (solid lines) and in the dark (dashed lines). 20 Fig. 1-16 The trend of solar cells from 1976 to 2019. 21 Fig. 2-1 The chemical structures of P3HT and PBTTTV-h. 33 Fig. 2-2 The instrument of sprayer. 35 Fig. 2-3 Cross-sectional SEM image of dense TiO2 thin film after calcining under air for 30 min. 35 Fig. 3-1 (a) XRD patterns and (b) UV-Vis transmittance spectra of TiO2 films prepared by USP method and SG method on FTO conductive glass. 45 Fig. 3-2 (a) The XRD pattern and (b) the photoemission yield spectrum of CH3NH3PbIxCl3-x prepared in this work. 47 Fig. 3-3 EDX measurement of perovskite layer. 48 Fig. 3-4 Cross-sectional FE-SEM images of PSCs with a TiO2 layer prepared (a)(c) from SG and (b)(d) by USP. 49 Fig. 3-5 AFM topographic images of (a) FTO glass. (b) FTO/TiO2-SG and (c) FTO/TiO2-USP. 50 Fig. 3-6 Top-view SEM images of the TiO2 surfaces prepared by (a)(c) SG and (b)(d) USP method. 51 Fig. 3-7 Top-view SEM images of perovskite layer on top of (a)(c) TiO2-SG/FTO and (b)(d) TiO2-USP/FTO. 52 Fig. 3-8 J-V curves of PSCs based on TiO2-SG and TiO2-USP compact layers. 53 Fig. 3-9 Histogram of PCE of PSCs based on TiO2-SG and TiO2-USP. 55 Fig. 3-10 EQE spectra of PSCs based on TiO2-SG and TiO2-USP. 55 Fig. 3-11 EIS spectra of PSCs based on TiO2-SG or TiO2-USP. 57 Fig. 4-1 Chemical structures of DIP-C6, DIQ-C6, DIQ-C12, and spiro-OMeTAD. 62 Fig. 4-2 UV-vis absorption spectra of DIP-based and DIQ-based compounds in 10 µM THF solution. 63 Fig. 4-3 Time-resolved PL intensity of perovskite (black) or perovskite/DIQ-C12 (red) films. (excitation wavelength at 485 nm) 65 Fig. 4-4 The photoelectron spectra of DIP-C6, DIQ-C6, and DIQ-C12 films. 66 Fig. 4-5 (a) Energy-level diagram and (b) device architecture of DIP-C6, DIQ-C6, DIQ-C12, and spiro-OMeTAD PSCs. 66 Fig. 4-6 Thermograms of HTMs measured by (a) TGA and (b) DSC. 68 Fig. 4-7 The frontier molecular orbitals of DIQ-C1 in the gas-phase. 71 Fig. 4-8 The frontier molecular orbitals of DIP-C1, DIQ-C1, and spiro-OMeTAD. 71 Fig. 4-9 The optimized structures and dihedral angles of DIP-C1 and DIQ-C1. 72 Fig. 4-10 (a) Photovoltaic characteristics of the holy-only devices based on a device structure of ITO glass/PEDOT:PSS/HTM/Au, and (b) their plots based on the Mott-Gurney equation. 74 Fig. 4-11 The Cross-section SEM image of DIQ-C12 PSC. 77 Fig. 4-12 The cross-sectional SEM image of DIQ-C6 PSC. 77 Fig. 4-13 The photographs of DIP-C6 (left) and DIQ-C6 (right) thin films coated on perovskite layer. 78 Fig. 4-14 J-V characteristics of DIP-based, DIQ-based, and spiro-OMeTAD PSCs. 78 Fig. 4-15 UV spectrum for DIQ-C12 film; EQE spectra for dopant-free DIQ-C12 and doped spiro-OMeTAD PSCs. 79 Fig. 4-16 Powder XRD pattern of dopant-free DIQ-C6, DIQ-C12, and doped spiro-OMeTAD. 81 Fig. 4-17 (a) Chemical structures of PhBTEH and PhBT12. (b) XRD pattern of PhBTEH (black) and PhBT12 (red). 82 Fig. 4-18 Cross-sectional-viewed packing structure of DIQ-C12. 82 Fig. 4-19 (a) Lamellar distance and (b) lamellar ordering of crystal packing of DIQ-C12. 83 Fig. 4-20 Hysteresis of J–V curves (RS: reverse scan, from VOC to JSC, FS: forward scan, from JSC to VOC) of dopant-free DIQ-C12 and doped spiro-OMeTAD PSC. 85 Fig. 4-21 J–V curve of the DIQ-C12 PSC measured using RS before stabilized power output. 85 Fig. 4-22 The power output and short-circuit current at maximum power output point in a stabilized power output (at a constant voltage = 0.69 V) during 60 seconds of illumination. 86 Fig. 4-23 (a) Contact angles of DIQ-C12 or doped spiro-OMeTAD thin films, and (b) variation of normalized PCEs between dopant-free DIQ-C12 and doped spiro-OMeTAD PSCs stored in the 90% relative humidity (RH). 88 Fig. 5-1 Chemical structures of P3HT (left) and PBTTTV-h (right). 91 Fig. 5-2 The 2D-GIWAXS patterns and 1D profiles along the qz and qy direction of P3HT (a), (c), and (e); PBTTTV-h (b), (d), and (f). 94 Fig. 5-3 Molecular structure of P3HT (a); PBTTTV-h (b). Molecular arrangement of PBTTTV-h (c) and (d). 95 Fig. 5-4 Schematic diagrams of molecular packing of P3HT (a); PBTTTV-h (b). 96 Fig. 5-5 (a) Photovoltaic characteristics of the holy-only devices based on a device structure of ITO glass/PEDOT:PSS/HTM/Au, and (b) their plots based on the Mott-Gurney equation. 97 Fig. 5-6 Cross-sectional SEM images of PSCs with (a) P3HT and (b) PBTTTV-h as the HTM. 98 Fig. 5-7 J-V curves of PSCs with PBTTTV-h and P3HT as the HTM. 100 Fig. 5-8 Statistical chart of the PCE of PSCs with P3HT and PBTTTV-h as the HTM based on 13 cells. 101 Fig. 5-9 PESA spectrum of the spin-casted films of PBTTTV-h or P3HT. 102 Fig. 5-10 Dark current–voltage curves of PSCs with PBTTTV-h and P3HT as the HTM. 103 Fig. 5-11 Long-term durability without encapsulation of normalized PCE over time in 90% relative humidity (RH) at 25oC with PBTTTV-h, P3HT, and spiro-OMeTAD as the HTM. 104 Fig. 5-12 The contact angles of water on top of P3HT and PBTTTV-h films. 105 Fig. 6-1 The chemical structures of P3HT, PBTTTV-h, and spiro-OMeTAD. 110 Fig. 6-2 Cross-section SEM images for (a) P3HT-based, (b) PBTTTV-h-based, and (c) spiro-OMeTAD-based devices. 111 Fig. 6-3 (a) AC2 spectra of P3HT, PBTTTV-h, and spiro-OMeTAD thin films. (b) Energy band diagrams of the studied PSCs with different HTM layers. 112 Fig. 6-4 J–V curves for the P3HT, PBTTTV-h or spiro-OMeTAD-based devices. 113 Fig. 6-5 Q-DLTS spectra recorded in a P3HT-based device measured at T = 300 K using a charging voltage of ΔV = 0.5 V and different charging times tC in the range of 200 µs (●) – 1s (∆). 117 Fig. 6-6 Plot of the maximum value of ΔQ as a function of the charging time tC for peaks A (●) and B (○). 117 Fig. 6-7 Q-DLTS spectra of a P3HT-based device measured by using a charging voltage of ΔV = 0.5 V and a charging time of tC = 1 s for different temperatures in the range of 250–320 K. Inset: Arrhenius plots derived from Q-DLTS spectra. 119 Fig. 6-8 Q-DLTS spectra with spiro-OMeTAD-based device measured at T = 300 K using a charging voltage of ΔV = 0.5 V and various charging times tC in the range of 200 µs (●) – 1s (∆). 121 Fig. 6-9 Resolution of Q-DLTS spectrum (●) with spiro-OMeTAD-based device at T = 300 K using a charging time of tC = 50 ms and a charging voltage of ΔV = 0.5 V. 121 Fig. 6-10 Q-DLTS spectra of a spiro-OMeTAD-based device measured using a charging voltage of ΔV = 0.5 V and a charging time of tC = 100 ms for different temperatures in the range of 250–320 K. Inset: Arrhenius plots derived from Q-DLTS spectra. 122 Fig. 6-11 Q-DLTS spectra of a PBTTTV-h-based device measured at T = 300 K using a charging voltage of ΔV = 0.5 V and various charging times tC in the range of 200 µs (●) to 1 s (∆). 124 Fig. 6-12 Resolution of the Q-DLTS spectrum (●) with PBTTTV-based device at T = 300 K using a charging time of tC = 1 s and a charging voltage of ΔV = 0.5 V. 124 Fig. 6-13 Q-DLTS spectra of a PBTTTV-h-based device measured using a charging voltage of ΔV = 0.5 V and a charging time of tC = 100 ms for different temperatures in the range of 250–320 K. Inset: Arrhenius plots derived from Q-DLTS spectra with the inset figure. 125 Fig. 6-14 Q-DLTS spectra of PSCs with various HTMs measured at T = 300 K using a charging voltage of ΔV = 0.5 V, and tC = 1 s for P3HT (●) and PBTTTV-h (○) and tC = 50 ms for spiro-OMeTAD-based (■) device. 128 Fig. 6-15 TRPL spectra of a bare perovskite film and perovskite/HTM films. The samples were illuminated with a wavelength of 485 nm. 131 Fig. 6-16 Hysteresis behavior of PSCs with (a) P3HT, (b) PBTTTV-h, and (c) spiro-OMeTAD as the HTM. 133 LIST OF TABLES Table 3-1 Photovoltaic parameters of PSCs based on TiO2-SG and TiO2-USP compact layers. 54 Table 3-2 EIS parameters of PSCs under AM 1.5 simulated light illumination at an intensity of 100 mW cm-2. 57 Table 4-1 Physical properties of HTMs. 64 Table 4-2 Theoretical calculation in transitions of lower-lying energy for DIP-C1 and DIQ-C1. 70 Table 4-3 Photovoltaic performances of DIP-based, DIQ-based, and spiro-OMeTAD PSCs. 76 Table 5-1 Photovoltaic characteristics of PSCs with PBTTTV-h and P3HT as the HTM. 100 Table 6-1 Photovoltaic parameters of VOC, JSC, F.F., and PCE for P3HT, PBTTTV-h, and spiro-OMeTAD-based devices. 114 Table 6-2 Trap parameters of a P3HT-based device determined under the following conditions: tC = 1 s and V = 0.5 V. 119 Table 6-3 Trap parameters with spiro-OMeTAD-based device at tC = 1 s and V = 0.5 V. 122 Table 6-4 Trap parameters with PBTTTV-h-based device at tC = 1 s, V = 0.5 V. 125 Table 6-5 Trap parameters at tC = 1 s and ΔV = 0.5 V. 128 Table 6-6 Fitted parameters of TRPL spectra. 131 | |
dc.language.iso | en | |
dc.title | 具新型載子傳導材料之鈣鈦礦太陽能電池的光伏與缺陷性質研究 | zh_TW |
dc.title | Photovoltaic Performance and Defect Analysis of Perovskite Solar Cells with Novel Carrier Transport Layers | en |
dc.type | Thesis | |
dc.date.schoolyear | 107-2 | |
dc.description.degree | 博士 | |
dc.contributor.coadvisor | 王立義 | |
dc.contributor.oralexamcommittee | 蔡豐羽,戴子安,林建村,吳明忠 | |
dc.subject.keyword | 鈣鈦礦太陽能電池,電子傳導材料,電洞傳導材料, | zh_TW |
dc.subject.keyword | perovskite solar cells,electron transport material,hole transport material, | en |
dc.relation.page | 160 | |
dc.identifier.doi | 10.6342/NTU201900711 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2019-04-19 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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