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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳俊維(Chun-Wei Chen) | |
| dc.contributor.author | Jun-Ru Chang | en |
| dc.contributor.author | 張鈞濡 | zh_TW |
| dc.date.accessioned | 2021-06-08T03:29:11Z | - |
| dc.date.copyright | 2019-08-18 | |
| dc.date.issued | 2019 | |
| dc.date.submitted | 2019-08-15 | |
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C.; Takei, K.; Guo, J.; Javey, A., Degenerate n-doping of few-layer transition metal dichalcogenides by potassium. Nano letters 2013, 13 (5), 1991-1995. 41. Quintana, M.; Vazquez, E.; Prato, M., Organic functionalization of graphene in dispersions. Accounts of chemical research 2012, 46 (1), 138-148. 42. Hirsch, A., Functionalization of single‐walled carbon nanotubes. Angewandte Chemie International Edition 2002, 41 (11), 1853-1859. 43. Voiry, D.; Goswami, A.; Kappera, R.; e Silva, C. d. C. C.; Kaplan, D.; Fujita, T.; Chen, M.; Asefa, T.; Chhowalla, M., Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering. Nature chemistry 2015, 7 (1), 45. 44. Sim, D. M.; Kim, M.; Yim, S.; Choi, M.-J.; Choi, J.; Yoo, S.; Jung, Y. S., Controlled doping of vacancy-containing few-layer MoS2 via highly stable thiol-based molecular chemisorption. ACS nano 2015, 9 (12), 12115-12123. 45. 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H.; Hong, Y., High-performance polymer light emitting diodes with interface-engineered graphene anodes. Organic Electronics 2013, 14 (9), 2324-2330. 51. Du, Y.; Liu, H.; Neal, A. T.; Si, M.; Peide, D. Y., Molecular Doping of Multilayer MoS2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances. IEEE Electron Device Letters 2013, 34 (10), 1328-1330. 52. Liu, H.; Neal, A. T.; Ye, P. D., Channel length scaling of MoS2 MOSFETs. ACS nano 2012, 6 (10), 8563-8569. 53. Radisavljevic, B.; Kis, A., Mobility engineering and a metal–insulator transition in monolayer MoS 2. Nature materials 2013, 12 (9), 815. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/21233 | - |
| dc.description.abstract | 二硫化鉬為二維材料中過渡金屬二硫系化物之一，其原子層間僅以微弱的凡德瓦力鍵結。二硫化鉬由於獨特的性質而受矚目，也因具有良好的電性如好的載子遷移率以及可以到達108的電流開關比而被認為有潛力應用於金屬氧化物半導體元件中。
在半導體製程中，透過摻雜調控半導體的電性是必要的技術，然而受限於原子層厚度的特性，一般的摻雜方式如離子佈植難以應用於二維材料中，因此為了將二硫化鉬應用於半導體中，發展穩定的摻雜技術是關鍵的。. 在此論文的第一部分，我們發現透過NMP在鹼中水解的反應能夠對二硫化鉬進行極強的n型摻雜，並且此反應適用於其他具有羰機的分子如丙酮。我們能透過控制反應時存在二硫化鉬表面鹼的量控制摻雜濃度。透過光學量測以及掃描穿隧顯微鏡我們發現此種摻雜是使分子水解的中間產物鍵結在二硫化鉬的硫缺陷，因此形成極為穩定的摻雜。 在第二部份我們將此種摻雜方式應用在二硫化鉬場效電晶體中，並且做出不同程度的摻雜甚至達到退化態，而在如此高的摻雜濃度依然沒有磁滯產生且未造成載子遷移率下降。我們也做了接面摻雜使元件達到極小的接觸電阻而展現極高的效能。 | zh_TW |
| dc.description.abstract | Molybdenum disulfide (MoS2), one of the transition metal dichalcogenides (TMDs), is a layered material with only weak Van der Waals forces between each layers. This two-dimensional (2D) material attracts much attention and is considered a promising candidate as the channel material in the next generation nanoelectronics due to its electrical properties such as high carrier mobility and high on/off ratio up to 108.
In the manufacturing process of semiconductor, it is necessary to modulate the electrical properties of channel materials by doping techniques. However, the atomic thickness of these 2-D material restrict the applicability of common doping method such as ion implantation. Therefore, it is important to develop a controllable and robust doping process in MoS2. In the first part (chapter 4) of this work we found a strong n-type doping process in MoS2 via a base-assisted hydrolysis reaction of organic compounds with carbonyl group such as N-Methyl-2-Pyrrolidone (NMP) or acetone. We can control the doping level by controlling the concentration of base on MoS2 surface during the doping process. By measuring optical properties and scan tunneling microscope (STM), we concluded that the dopant is the intermediate of hydrolysis reaction and form chemisorption with MoS2 in the sulfur vacancy so that the doping has an excellent stability. In the second part (chapter 5) we applied the doping method in the MoS2 transistor and created different doping level from non-degenerate to degenerate (carrier density = 3 ˣ 1013 cm-2). Because the vacancy repairing by the doping process, there’re no hysteresis and mobility degradation in the MoS2 transport behavior even in such heavily doping level. And via contact doping, we fabricated high performance MoS2 transistor with a low contact resistance of 2.7(kΩ∙μm) , a mobility of 42 cm-2V-1s-1,and a high drain current of 290 μA/μm. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T03:29:11Z (GMT). No. of bitstreams: 1 ntu-108-R06527064-1.pdf: 5392941 bytes, checksum: 95c5d255cf8cb01ef02443f35007317d (MD5) Previous issue date: 2019 | en |
| dc.description.tableofcontents | 口試委員會審定書 #
Acknowledgement i 摘要 iii ABSTRACT iv CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xiv Chapter 1 Introduction 1 1.1 Brief history of 2D materials 1 1.1.1 Graphene 1 1.1.2 Transition metal dichalcogenides (TMDs) 3 1.1.3 Molybdenum disulfide (MoS2) 3 1.2 Transport behavior 5 1.2.1 Transport behavior measurement 5 1.2.2 Schottky barrier pinning 7 1.3 Motivation 9 Chapter 2 Literature Review 11 2.1 Optical properties of MoS2 11 2.1.1 Raman spectrum 11 2.1.2 Photoluminescence 14 2.2 Doping techniques of MoS2 18 2.2.1 Surface transfer doping 19 2.2.2 Substitutional doping 20 2.2.3 Covalent functional doping 22 Chapter 3 Experimental Process 24 3.1 Characterization of CVD MoS2 on Sapphire 24 3.2 MoS2 transistor 25 3.2.1 Transfer process for CVD MoS2 on sapphire 25 3.2.2 LED Photolithography 27 3.2.3 Device fabrication 29 Chapter 4 Strong and Controllable n-Type doping of MoS2 via a base-assisted process 31 4.1 Introduction 31 4.2 NMP-base doping 32 4.2.1 Controllable n-type doping 32 4.2.2 XPS measurement 35 4.2.3 Doping stability 36 4.3 Doping mechanism 38 4.3.1 Reaction during the NMP-base doping 38 4.3.2 Acetone-base doping 40 4.3.3 STM measurement 42 4.4 Work function measurement by UPS 43 4.5 Conclusion 45 Chapter 5 High-Performance n-Type MoS2 Transistor 47 5.1 Introduction 47 5.2 Transport behavior of n-type doped MoS2 transistor 48 5.2.1 Experimental detail of NMP-base doped MoS2 transistor 48 5.2.2 NMP-base doped MoS2 transistor 49 5.2.3 Acetone-base doped MoS2 transistor 54 5.3 Transport behavior of Contact doped MoS2 transistor 55 5.3.1 Experimental detail and introduction about contact doping 56 5.3.2 Transfer length method 57 5.3.3 Contact doped MoS2 transistor 58 5.4 NMP-base doping in other TMDs 61 5.5 Conclusion 62 REFERENCE 63 | |
| dc.language.iso | en | |
| dc.subject | N型摻雜 | zh_TW |
| dc.subject | 高效能 | zh_TW |
| dc.subject | 無磁滯 | zh_TW |
| dc.subject | 二硫化鉬 | zh_TW |
| dc.subject | 缺陷填補 | zh_TW |
| dc.subject | vacancy filling | en |
| dc.subject | n-type doping | en |
| dc.subject | high performance | en |
| dc.subject | MoS2 | en |
| dc.subject | hysteresis free | en |
| dc.title | 可調控無磁滯之N型摻雜於二硫化鉬場效電晶體之研究 | zh_TW |
| dc.title | Robust, Controllable, Hysteresis-free Ultrastrong n-type Doping of High Performance MoS2 Electronics | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 107-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 溫政彥(Cheng-Yen Wen),李紹先(Shao-Sian Li) | |
| dc.subject.keyword | 二硫化鉬,N型摻雜,高效能,缺陷填補,無磁滯, | zh_TW |
| dc.subject.keyword | MoS2,n-type doping,high performance,vacancy filling,hysteresis free, | en |
| dc.relation.page | 69 | |
| dc.identifier.doi | 10.6342/NTU201903418 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2019-08-16 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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