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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 藍崇文 | |
| dc.contributor.author | Qi-Rui Chou | en |
| dc.contributor.author | 周圻叡 | zh_TW |
| dc.date.accessioned | 2021-06-08T01:10:07Z | - |
| dc.date.copyright | 2014-09-15 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014-08-17 | |
| dc.identifier.citation | [1] G. Masson, M. Latour, D. Biancardi, Global market outlook for photovoltaics until 2016, European Photovoltaic Industry Association, (2012).
[2] F.J. Henley, Kerf-free wafering: Technology overview and challenges for thin PV manufacturing, in: Photovoltaic Specialists Conference (PVSC), 35th IEEE, 2010, pp. 001184-001192. [3] G. Hahn, A. Schonecker, A. Gutjahr, New crystalline Si ribbon materials for photovoltaics, in: K. Nakajima, N. Usami (Eds.) Crystal Growth of Si for Solar Cells, Springer Berlin Heidelberg, 2009, pp. 97-119. [4] S.G. H. Mitsuyasu, R. Oishi, K. Yoshida, Characteristics of CDS silicon wafers, in: 23rd European Photovoltaic Solar Energy Conference, Valencia, 2008, pp. 1497. [5] Y. Tsukuda, H. Taniguchi, K. Yano, K. Igarashi, H. Mitsuyasu, T. Nunoi, Sheet manufacturing method, sheet, sheet manufacturing apparatus, and solar cell, WO Patent No. 2004003264 A1, 2004. [6] Y. Tsukuda, Silicon plate and solar cell, US Patent No. 7071489 B2, 2006. [7] Y. Tsukuda, Silicon plate, producing method thereof, and solar cell, US Patent No. 7659542 B2, 2010. [8] E.T. Hantsoo, G.D.S. Hudelson, R. Jonczyk, A.M. Lorenz, E.M. Sachs, R.L. Wallace, Methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like, US Patent No. 8293009 B2, 2012. [9] C.C. E. Cuddihy, A. Gupta, R. Liang, Flat-plate solar array project. Volume 3: Silicon Sheet: Wafers and Ribbons, in, Jet Propulsion Lab., California Inst. of Tech., Pasadena, 1986. [10] A. Schonecker, L.J. Geerligs, A. Muller, Casting technologies for solar silicon wafers: Block casting and ribbon-growth-on substrate, in: H. Richter, M. Kittler (Eds.) Gettering and Defect Engineering in Semiconductor Technology, Trans Tech Publications Ltd, Zurich-Uetikon, 2004, pp. 149-158. [11] J.I. Hanoka, An overview of silicon ribbon growth technology, Solar Energy Materials and Solar Cells, 65 (2001) 231-237. [12] C. Honsberg, S. Bowden, Edge Defined Film Fed Growth (EFG), in: http://pveducation.org/pvcdrom/manufacturing/other-wafering-techniques [13] I.A. Schwirtlich, EFG ribbon technology, in: V. Petrova-Koch, R. Hezel, A. Goetzberger (Eds.) High-Efficient Low-Cost Photovoltaics, Springer Berlin Heidelberg, 2009, pp. 57-64. [14] C.E. Bleil, A new method for growing crystal ribbons, Journal of Crystal Growth, 5 (1969) 99-104. [15] A. Schonecker, L. Laas, A. Gutjahr, M. Goris, P. Wyers, G. Hahn, D. Sontag, Ribbon-growth-on-substrate: status, challenges and promises of high speed silicon wafer manufacturing, in: 12th NREL workshop on silicon solar cell materials and Processes, Colorado, 2002. [16] H. Yamatsugu, T. Takakura, S. Goma, S. Kidoguchi, R. Oishi, Y. Okamoto, K. Yoshida, K. Yano, H. Taniguchi, M. Kamitaka, C. Yamawaki, M. Futagawa, New wafer technology for crystalline silicon solar cell, in: 23rd European Photovoltaic Solar Energy Conference, Valencia, 2008, pp. 1114-1116. [17] P. Bellanger, A. Sow, M. Grau, A. Augusto, J.M. Serra, A. Kaminski, S. Dubois, A. Straboni, New method of fabricating silicon wafer for the photovoltaic application based on sintering and recrystallization steps, Journal of Crystal Growth, 359 (2012) 92-98. [18] T. Saito, A. Shimura, S. Ichikawa, A reusable mold in directional solidification for silicon solar cells, Solar Energy Materials, 9 (1983) 337-345. [19] F.L. Riley, Silicon nitride and related materials, Journal of the American Ceramic Society, 83 (2000) 245-265. [20] G. Petzow, M. Herrmann, Silicon nitride ceramics, in: M. Jansen (Ed.) High Performance Non-Oxide Ceramics II, Springer Berlin Heidelberg, 2002, pp. 47-167. [21] N.S. Jacobson, Corrosion of silicon-based ceramics in combustion environments, J. Am. Ceram. Soc., 76 (1993) 3-28. [22] T. Goto, T. Narushima, Y. Iguchi, T. Hirai, Active to passive transition in the high-temperature oxidation of CVD SiC and Si3N4, in: K. Nickel (Ed.) Corrosion of Advanced Ceramics, Springer Netherlands, 1994, pp. 165-176. [23] R. Munro, S. Dapkunas, Corrosion characteristics of silicon carbide and silicon nitride, J. Res. Natl. Inst. Stan. Technol., 98 (1993) 607-631. [24] Y.Z. Hu, R.J. Gutmann, T.P. Chow, Silicon nitride chemical mechanical polishing mechanisms, J. Electrochem. Soc., 145 (1998) 3919-3925. [25] D.S. Fox, E.J. Opila, Q.N. Nguyen, D.L. Humphrey, S.M. Lewton, Paralinear oxidation of silicon nitride in a water-vapor/oxygen environment, J. Am. Ceram. Soc., 86 (2003) 1256-1261. [26] H. Lange, G. Wotting, G. Winter, Silicon nitride — from powder synthesis to ceramic materials, Angew. Chem. Int., 30 (1991) 1579-1597. [27] O. Minster, J. Granier, C. Potard, N. Eustathopoulos, Molding and directional solidification of solar-grade silicon using an insulating molten salt, J. Cryst. Growth, 82 (1987) 155-161. [28] L. Stockmeier, G. Muller, A. Seidl, T. Lehmann, C. Reimann, J. Friedrich, Preferred grain orientations in silicon ribbons grown by the string ribbon and the edge-defined film-fed growth methods, J. Cryst. Growth, 395 (2014) 74-79. [29] A. Goodrich, P. Hacke, Q. Wang, B. Sopori, R. Margolis, T.L. James, M. Woodhouse, A wafer-based monocrystalline silicon photovoltaics road map: Utilizing known technology improvement opportunities for further reductions in manufacturing costs, Sol. Energ. Mat. Sol. C., 114 (2013) 110-135. [30] W.-K. Rhim, K. Ohsaka, Thermophysical properties measurement of molten silicon by high-temperature electrostatic levitator: density, volume expansion, specific heat capacity, emissivity, surface tension and viscosity, J. Cryst. Growth, 208 (2000) 313-321. [31] I. Brynjulfsen, L. Arnberg, Nucleation of silicon on Si3N4 coated SiO2, J. Cryst. Growth, 331 (2011) 64-67. [32] R.E. Chaney, C.J. Varker, The erosion of materials in molten silicon, J. Electrochem. Soc., 123 (1976) 846-852. [33] Z. Yuan, W.L. Huang, K. Mukai, Wettability and reactivity of molten silicon with various substrates, Appl. Phys. A-Mater., 78 (2004) 617-622. [34] B. Drevet, N. Eustathopoulos, Wetting of ceramics by molten silicon and silicon alloys: a review, J Mater Sci, 47 (2012) 8247-8260. [35] B. Drevet, O. Pajani, N. Eustathopoulos, Wetting, infiltration and sticking phenomena in Si3N4 releasing coatings in the growth of photovoltaic silicon, Sol. Energ. Mat. Sol. C., 94 (2010) 425-431. [36] S. Frings, H. Meinema, C. van Nostrum, R. van der Linde, Organic-inorganic hybrid coatings for coil coating application based on polyesters and tetraethoxysilane, Prog. Org. Coat., 33 (1998) 126-130. [37] K. Abe, Y. Sanada, T. Morimoto, Anti-reflective coatings for CRTs by sol-gel process, J. Sol-Gel Sci. Technol., 26 (2003) 709-713. [38] T. Hwang, H. Lee, H. Kim, G. Kim, Two layered silica protective film made by a spray-and-dip coating method on 304 stainless steel, J. Sol-Gel Sci. Technol., 55 (2010) 207-212. [39] H. Mori, S. Mase, N. Yoshimura, T. Hotta, K. Ayama, J.I. Tsubaki, Fabrication of supported Si3N4 membranes using the pyrolysis of liquid polysilazane precursor, J. Membrane Sci., 147 (1998) 23-33. [40] G.A. Somorjai, Y. Li, Impact of surface chemistry, P. Natl. Acad. Sci. USA, 108 (2011) 917-924. [41] M. Singh, D.R. Behrendt, Microstructure and mechanical properties of reaction-formed silicon carbide (RFSC) ceramics, Mater. Sci. Eng.: A, 187 (1994) 183-187. [42] D.-W. Shin, S.S. Park, Y.-H. Choa, K. Niihara, Silicon/silicon carbide composites fabricated by infiltration of a silicon melt into charcoal, J. Am. Ceram. Soc., 82 (1999) 3251-3253. [43] A. Ciftja, T. Engh, M. Tangstad, Wetting properties of molten silicon with graphite materials, Metall and Mat Trans A, 41 (2010) 3183-3195. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18530 | - |
| dc.description.abstract | 目前矽晶太陽能電池模組已接近$0.50/Wp的成本，但其主要成本仍在於矽晶片。而晶片製造在切片與切割矽損失仍佔相當高的成本，因此無切割損失的矽晶片鑄造技術日益重要。實驗室提出壓合鑄造矽晶片的新方法，首先建立了壓鑄設備及簡單測試，針對錫與矽的基本壓鑄行為有初步了解，了解了溫差、壓速、基板材質等因素，對晶片的外觀形狀、厚度、均勻性，與晶粒方向的影響。同時，在壓鑄有了一定成果後，也利用EBSD，對晶向及晶界加以分析，並與矽晶帶生長技術互相比較。 | zh_TW |
| dc.description.abstract | As the cost of silicon solar module is near $0.50/Wp, silicon wafers remain the major cost. However, to produce the wafers from ingot growth, the cost for slicing and kerf-loss silicon is still very high. Therefore, the kerf-free wafer casting technology has attracted much attention recently. Labrotary propose a novel single wafer press-casting technique to do experiment. First, a prototype system has been developed. The effects of major control parameters, such as the temperature difference, pressing speed, and the substrate materials, on the wafer shape, thickness, uniformity, and grain orientation were examined for tin and silicon. Some preliminary results were obtained and the feasibility of the technique was discussed. In addition, press-casting silicon wafers will analyse grain orientation and grain boundary by EBSD, then compare it to silicon ribbons of other grown methods. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T01:10:07Z (GMT). No. of bitstreams: 1 ntu-103-R00524059-1.pdf: 4128071 bytes, checksum: 459072c625ae0f2ccaeb549209fddbe5 (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | 誌謝 i
中文摘要 ii Abstract iii 目錄 iv 圖目錄 vii 表目錄 xi 第一章 緒論 1 1.1簡介 1 1.2文獻回顧 2 1.2.1矽多晶鑄錠 2 1.2.2矽晶帶製造技術 3 1.2.2.1線牽引矽帶(String Ribbon Method，SR) 3 1.2.2.2導膜法(Edge-Defined Film-Fed Growth，EFG) 4 1.2.2.3基板矽帶生長 (Ribbon Growth on Substrate，RGS) 6 1.2.3矽晶片直接製造技術 8 1.2.3.1基板浸潤結晶(Crystallization on Dipped Substrate，CDS) 8 1.2.3.2矽晶片再結晶(Full wafer recrystallization，FWR) 9 1.2.4阻障材料 10 1.2.4.1碳化矽 10 1.2.4.2氮化矽 11 1.2.4.3氟化鈣(CaF2)與氟化鎂(MgF2)鹽 14 1.2.5矽晶帶EBSD分析 15 1.3研究動機 17 第二章 實驗藥品、設備及流程 18 2.1實驗藥品 18 2.1.1壓合鑄造矽片使用藥品 18 2.1.2矽晶片化學處理藥品 19 2.2實驗設備與器材 19 2.2.1鑄片爐 20 2.2.2壓鑄實驗前後處理設備 22 2.2.3晶片化學處理設備 24 2.2.4量測設備 25 2.2.5實驗步驟及流程 26 2.2.5.1錫材製備 26 2.2.5.2人為壓合鑄造錫片 26 2.2.5.3鑄片爐壓合鑄造錫片 27 2.2.5.4錫片厚度量測 27 2.2.5.5矽材製備 27 2.2.5.6基板選擇及塗佈 27 2.2.5.7塗佈完成基板之燒結 28 2.2.5.8石墨薄鑄板燒結 28 2.2.5.9壓合鑄造矽晶片 28 2.2.5.10矽片厚度量測 29 第三章 研究結果與討論 30 3.1模擬壓合鑄造矽晶片實驗 30 3.1.1壓合鑄造錫片實驗 30 3.1.1.1人為壓鑄錫模擬 31 3.1.1.2鑄片爐壓鑄模擬 33 3.1.2水珠模擬實驗 37 3.1.2.1潤濕性的影響 37 3.2壓合鑄造矽晶片之實驗 40 3.2.1塗佈層的影響 40 3.2.2壓鑄速度的影響 50 3.2.3溫差的影響 52 3.2.3.1相同溫差，不同下板持溫影響 52 3.2.3.2下板持溫參考熔點，不同溫差影響 53 3.2.4不同基板的影響 55 3.2.4.1氮化矽床 55 3.2.4.2石墨板表面改質 59 3.3壓合鑄造矽片斷面EBSD分析 64 第四章 結論 66 參考文獻 68 | |
| dc.language.iso | zh-TW | |
| dc.title | 壓合鑄造矽晶片之研究 | zh_TW |
| dc.title | Study on Press-Casting of Silicon Wafer | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 102-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 洪儒生,徐文慶 | |
| dc.subject.keyword | 太陽能,切割成本,矽晶片,壓合鑄造,矽晶帶, | zh_TW |
| dc.subject.keyword | Solar Energy,Slicing cost,Silicon wafer,Press-casting,Silicon ribbon, | en |
| dc.relation.page | 72 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2014-08-18 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
| 顯示於系所單位： | 化學工程學系 | |
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