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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 謝宗霖(Tzong-Lin Jay Shieh) | |
| dc.contributor.author | Jyun-You Jheng | en |
| dc.contributor.author | 鄭鈞右 | zh_TW |
| dc.date.accessioned | 2021-06-08T00:43:34Z | - |
| dc.date.copyright | 2020-09-22 | |
| dc.date.issued | 2020 | |
| dc.date.submitted | 2020-08-15 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17788 | - |
| dc.description.abstract | 本研究的主旨在於設計由(Bi0.5Na0.5)TiO3 (簡稱BNT)、BaTiO3 (簡稱BT)所形成之(Bi0.5Na0.5)TiO3/BaTiO3 (簡稱BNT/BT)層狀薄膜，並將以此層狀薄膜為基礎，與成分位在MPB (Morphotropic Phase Boundary)內之(Bi0.5Na0.5)0.935Ba0.065TiO3 (BNT-6.5BT)薄膜作鐵電性質的比較。所使用的製程為溶膠凝膠法(sol-gel)以及旋轉塗佈法(spin-coating)，並利用快速熱退火製程使薄膜結晶成相；而選用的基材為Pt/Ti/SiO2/Si基材以及SUS301不鏽鋼基材。 本研究首先製備BNT、BT於具高化學穩定性的Pt/Ti/SiO2/Si基材，並製備Pt、Au、Cu之不同上電極。透過電流-電壓曲線之分析，結果顯示BNT具有較BT更高的漏電流值且BNT與BT皆與所有金屬上電極形成良好的Schottky介面。其中，BNT與BT皆與Pt上電極形成具最小漏電流的介面，且於電滯曲線量測下表現出最高之殘餘極化量及最大極化量。因此本研究嘗試製備BNT/BT層狀薄膜並以Pt作為薄膜之上下電極，形成金屬鐵電層金屬(metal-insulator-metal)之結構。透過微結構、結晶相、電流-電壓曲線以及電滯曲線等分析方法，結果顯示BNT/BT層狀薄膜中的BT能夠改善BNT的結晶性以及降低BNT的漏電流表現並且提升材料內部電偶極極化的能力。藉由positive-up negative-down電滯曲線的量測，以扣除漏電流與電偶極伸縮所貢獻的極化量，得到在相近電場強度施加下BNT/BT層狀薄膜的兩倍殘餘極化量(2Pr)達20.78 μC/cm2，較BNT-6.5BT薄膜的2Pr = 15.36 μC/cm2優異。 不鏽鋼基板因為具有可撓性，可以承受較大程度的形變量而使鐵電材料的上下表面誘發更高的極化電荷輸出，具較佳的壓電行為表現。且其材料成本較低，適合作為壓電元件的基材。本研究透過製備LaNiO3薄膜於不鏽鋼基板作為緩衝層，成功將BNT薄膜、BNT/BT層狀薄膜及BNT-6.5BT薄膜製備於不鏽鋼基材上，結果顯示BNT/BT層狀薄膜能夠改善材料內電偶極的極化能力，使其表現出更低的矯頑電場以及更高的最大極化量，且BNT/BT層狀薄膜展現出較BNT-6.5BT薄膜更為出色的鐵電性質。透過positive-up negative-down電滯曲線量測，在相近的電場強度下，BNT/BT層狀薄膜的2Pr = 41.18 μC/cm2，較BNT-6.5BT薄膜的2Pr = 36.72 μC/cm2優異。 | zh_TW |
| dc.description.abstract | The main goal of this study is to design a ferroelectric layered thin film composed of (Bi0.5Na0.5)TiO3 (BNT) and BaTiO3 (BT) layers (i.e., BNT/BT) and compare it with (Bi0.5Na0.5)0.935Ba0.065TiO3 (BNT-6.5BT) solid-solution ferroelectric thin film, which is an MPB (Morphotropic Phase Boundary) composition of the BNT-BT solid solution. The sol-gel, spin-coating, and rapid thermal annealing methods were adopted to prepare the ferroelectric thin films on two different substrates: Pt/Ti/SiO2/Si and SUS301 stainless steel substrates. BNT and BT thin films were first prepared on the Pt/Ti/SiO2/Si substrate with different upper electrodes: Pt, Au, and Cu. The current-voltage (I-V) analysis has shown that BNT had a higher conductivity than BT, and BNT and BT both formed a good Schottky contact with the selected upper electrodes. Among them, films with the Pt upper electrode exhibited the smallest leakage current density and the largest remanent and maximum polarizations. Therefore, in this study, the Pt top electrode was selected to prepare the Pt/BNT/BT/Pt metal-insulator-metal (M-I-M) layered structure for characterizing the BNT/BT thin films, which include SEM, XRD, and the I-V and polarization-electric field (P-E) measurements. The experimental results showed that the BT layer in the BNT/BT layered thin film was able to improve the crystallinity and reduce the leakage of the BNT layer, resulting in a better polarization switching ability, hence a larger and softer ferroelectric P-E hysteresis. Based on the results of positive-up negative-down (PUND) measurements, the double remanent polarization value (2Pr) of the BNT/BT layered thin film was 20.78 μC/cm2, about 35% higher than that of the BNT-6.5BT MPB thin film (2Pr = 15.36 μC/cm2). Because of its flexibility, the stainless steel substrate can withstand larger flexural movements and cantilever-type piezoelectric devices based on the stainless steel substrate can typically produce higher current outputs via direct piezoelectricity. In this study, we introduced LaNiO3 as a buffer layer on the SUS301 stainless steel substrate to facilitate the deposition of the BNT, BNT/BT, and BNT-6.5BT thin films. The films exhibited a single-phase perovskite structure without secondary phases. The XRD and P-E measurements showed that the BT layer in the BNT/BT layered thin film could improve the crystallinity of the BNT layer; hence, the BNT/BT layered thin film exhibited a lower coercive field and a higher maximum polarization than those of the BNT thin film. Based on the PUND measurements, the 2Pr value of the BNT/BT layered thin film on the SUS301 stainless steel substrate was 41.18 μC/cm2, about 12% higher than that of the BNT-6.5BT MPB thin film (2Pr = 36.72 μC/cm2). | en |
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| dc.description.tableofcontents | 口試委員會審定書 i 致謝 ii 摘要 iv Abstract vi 目錄 viii 圖目錄 xi 表目錄 xx 第一章 緒論 1 1.1 研究背景與動機 1 1.2 論文架構 3 第二章 文獻回顧 4 2.1 材料基本性質 4 2.1.1 鐵電性質之根源 4 2.1.2 鐵電材料的遲滯曲線分析原理 11 2.1.3 鐵電陶瓷的電荷傳輸機制 16 2.1.4 弛緩體(Relaxer)之形成與性質 22 2.1.5 BaTiO3鐵電材料 27 2.1.6 (Bi0.5Na0.5)TiO3 (BNT)鐵電材料 31 2.1.7 (Bi0.5Na0.5)0.935Ba0.065TiO3 (BNT-6.5BT)鐵電材料 34 2.1.8 LaNiO3導體氧化物 36 2.2 溶膠-凝膠法 37 第三章 實驗方法 41 3.1 製備於Pt/Ti/SiO2/Si基板之鐵電薄膜系統 43 3.1.1 溶膠配製 43 3.1.2 薄膜製備 46 3.2 製備於SUS301不鏽鋼基板之鐵電薄膜系統 51 3.2.1 溶膠配製 51 3.2.2 薄膜製備 51 3.3 電極製備 59 3.4 材料特性分析 60 3.4.1 結晶相分析 60 3.4.2 微結構分析 60 3.4.3 電流-電壓曲線(I-V curve)量測 61 3.4.4 電滯曲線分析 61 第四章 實驗結果 64 4.1 BNT、BT薄膜 65 4.1.1 結晶相鑑定 65 4.1.2 微結構分析 66 4.1.3 電流-電壓曲線(I-V curve)量測 68 4.1.4 動態遲滯曲線分析 72 4.2 製備於Pt/Ti/SiO2/Si基板之鐵電薄膜系統 73 4.2.1 BNT薄膜 74 4.2.2 BNT/BT層狀薄膜 77 4.2.3 BNT-6.5BT薄膜 81 4.3 製備於SUS301不鏽鋼基板之鐵電薄膜系統 84 4.3.1 BNT薄膜、BNT/BT層狀薄膜以及BNT-6.5BT薄膜 84 4.3.1.1 BNT薄膜 85 4.3.1.2 BNT/BT層狀薄膜 87 4.3.1.3 BNT-6.5BT薄膜 89 4.3.2 LaNiO3緩衝層的影響 95 4.3.2.1 LaNiO3薄膜 96 4.3.2.2 BNT薄膜 97 4.3.2.3 BNT/BT層狀薄膜 100 4.3.2.4 BNT-6.5BT薄膜 104 4.3.3 不鏽鋼基板粗糙度的影響 107 第五章 討論 110 5.1 製備於Pt/Ti/SiO2/Si基板之鐵電薄膜系統 110 5.1.1 BT薄膜的影響 110 5.1.2 BNT薄膜、BNT/BT層狀薄膜以及BNT-6.5BT薄膜的電滯曲線分析 114 5.2 製備於SUS301不鏽鋼基板之鐵電薄膜系統 118 第六章 結論 122 6.1 研究成果 122 6.2 未來研究方向 124 參考文獻 125 | |
| dc.language.iso | zh-TW | |
| dc.title | 鈦酸鉍鈉與鈦酸鋇之固溶與堆疊薄膜鐵電特性之比較分析研究 | zh_TW |
| dc.title | Comparison of the ferroelectric properties between the solid-solution and layered thin films of (Bi0.5Na0.5)TiO3 and BaTiO3 | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 108-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 段維新(Wei-Hsing Tuan),陳敏璋(Miin-Jang Chen) | |
| dc.subject.keyword | (Bi0.5Na0.5)TiO3,BaTiO3,LaNiO3,鐵電性,層狀薄膜,形變相界, | zh_TW |
| dc.subject.keyword | (Bi0.5Na0.5)TiO3,BaTiO3,LaNiO3,Ferroelectricity,Layered thin films,Morphotropic phase boundary, | en |
| dc.relation.page | 132 | |
| dc.identifier.doi | 10.6342/NTU202003366 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2020-08-17 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| U0001-1408202003543000.pdf 未授權公開取用 | 10.56 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。