Skip navigation

DSpace

機構典藏 DSpace 系統致力於保存各式數位資料(如:文字、圖片、PDF)並使其易於取用。

點此認識 DSpace
DSpace logo
English
中文
  • 瀏覽論文
    • 校院系所
    • 出版年
    • 作者
    • 標題
    • 關鍵字
    • 指導教授
  • 搜尋 TDR
  • 授權 Q&A
    • 我的頁面
    • 接受 E-mail 通知
    • 編輯個人資料
  1. NTU Theses and Dissertations Repository
  2. 工學院
  3. 材料科學與工程學系
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17666
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor莊東漢(Tung-Han Chuang)
dc.contributor.authorHsi-Ching Wangen
dc.contributor.author王璽清zh_TW
dc.date.accessioned2021-06-08T00:29:19Z-
dc.date.copyright2013-07-18
dc.date.issued2013
dc.date.submitted2013-07-04
dc.identifier.citation[1] C. A. Giffels, R. J. Gashler, J. M. Morabito and K. M. Striny, “Interconnection Media”, AT&T Technical Journal, Vol. 66, No. 4 (1987) pp. 31-44.
[2] M. R. Pinnel and W. H. Knausenberger, 'Interconnection System Requirements and Modeling', AT&T Technical Journal, Vol. 66, No. 4 (1987) pp. 45-56.
[3] J. H. Lau, “Ball Grid Array Technology”, McGraw-Hill, New York (1995) pp.2.
[4] G. G. Harman, “Wire Bonding in Microelectronics Materials, Processes, Reliability, and Yield (2nd ed.)”, McGraw-Hill, New York (1997) pp. 1–11.
[5] N. Srikanth, S. Murali, Y.M. Wong and Charles J. Vath III, “Critical Study of Thermosonic Copper Ball Bonding”, Thin Solid Films, Vol. 462– 463 (2004) pp.339–345.
[6] A. Kamijo and H. Igarashi, “Silver Wire Ball Bonding and Its Ball/Pad. Interface Characteristics”, 35th Proc. IEEE Electronic Components Conf., (1985) pp. 91-97.
[7] H.W. Hsueh, F. Y. Hung, T. S. Lui and L. H. Chen, 'Microstructure, electric flame-off characteristics and tensile properties of silver bonding wires', Microelectronics Reliability, Vol. 51, Issue 12 (2011) pp. 2243–2249.
[8] H. M. Naguib and B. K. MacLaurin, “Silver migration and the reliability of Pd/Ag conductors in thick film dielectric crossover structures,” IEEE Transactions On Component, Hybrids, And Manufacturing Technology, Vol. CHMT-2, No. 2 (1979) pp. 196-207.
[9] T. H. Blewitt, R. R. Coltman and J. K. Redman, “Low‐Temperature Deformation of Copper Single Crystals”, J. Appl. Phys., Vol. 28 (1957) pp. 651-660..
[10] G.T. Gray III, “Deformation twinning in Al-4.8 wt% Mg”, Acta Metall., Vol. 36 (1988) pp. 1745-1754.
[11] I.L. Dillamore, R.E. Smallman and W.T. Roberts, “A determination of the stacking-fault energy of some pure F.C.C. metals”, Philo. Mag., Vol. 9 (1964) pp. 517-526.
[12] L. E. Murr, “Interfacial Phenomena in Metals and Alloys”, Addison Wesley, Reading MA (1975).
[13] O. Johari and G. Thoms, “Substructures in explosively deformed Cu and Cu-Al alloys”, Acta Metall., Vol. 12 (1964) pp. 1153-1159.
[14] L. Lu, Y. Shen, X. Chen, L. Qian and K. Lu, “Ultrahigh Strength and High Electrical Conductivity in Copper”, Science, Vol. 304 (2004) pp.422-426.
[15] K. C. Chen, W. W. Wu, C. N. Liao, L. J. Chen and K. N. Tu, “Observation of Atomic Diffusion at Twin-Modified Grain Boundaries in Copper”, Science, Vol. 321 (2008) pp.1066-1069.
[16] J.D.Lee, US Patent 8,101,123 B2, 2012.
[17] D.S. Liu and Y.C. Chao, “Effects of Dopant, Temperature and Strain Rate on the Mechanical Properties of Micrometer Gold Bonding Wire,” J. Electron. Mater., Vol. 32 (2003) pp. 159-165.
[18] H. Lichtenberger, G. Toea, and M. Zasowski, “Development of Low Loop, Long Length, Hydrostatically Extruded Bonding Wire,” IEEE International Symposium on Advanced Packaging Materials (1997) pp. 120-123.
[19] Y. Ohno, Y. Ohzeki, T. Aso, and O. Kitamura, “Factors Governing the Loop Profile in Au Bonding Wire”, IEEE Electronic Components Technology Conf. (1991) pp. 899–902.
[20] J. Onuki, M. Suwa, T. Iizuka and S. Okikawa, “Ball Formation in Aluminum Ball Bonding,” IEEE Transactions on Components, Hybrids, and Manufacturing Technology, Vol. Chmt-8, No. 4 (1985) pp. 559-563.
[21] J. Onuki, M. Suwa, M. Koizumi and T. Iizuka, “Investigation of Aluminum Ball Bonding Mechanicm,” IEEE Transactions on Components, Hybrids, and Manufacturing Technology, Vol. Chmt-10, No. 2 (1987) pp. 242-246.
[22] M. Sheaffer, L. R. Levine and B. Schlain, 'Optimizing the Wire-Bonding Process for Copper Ball Bonding, Using Classic Experimental Designs,' IEEE Transactions on Components, Hybrids, and Manufacturing Technology, Vol. Chmt-10, No. 3, (1987) pp. 321-326.
[23] L. England and T. Jiang, “Reliability of Cu Wire Bonding to Al Metallization,” Electronic Components and Technology Conference (2007) pp. 1604-1613.
[24] A. Kamijo and H. Igarashi, “Silver Wire Ball bonding and Ball/Pad interface characterics,” Proceedings of the 35th Electronic Component Conference (1985) pp. 91-97.
[25] J. S. Cho and J. T. Moon, “Low Cost Solution for Bongding Wire,” Equipment for Electronic Products Manufacturing (2008) pp. 60-63
[26] K. Atsumi, T. Ando, M. Kobayashi and O. Osunda, “Ball bonding technique for copper wire,” Proc. IEEE Electronics Components Conf . (1986) pp. 312-317.
[27] S. L. Khoury, D. J. Burkhard, D. P. Galloway and T. A. Scharr, “A Comparison of Copper and Gold Wire Bonding on Integrated Circuit Devices,” IEEE Trans. Comp. Hybr. Manuf. Technol., Vol. 13, No. 4 (1990) pp. 673-681
[28] J. Tan, B. H. Toh and H. M. Ho, “Modelling of free air ball for copper wire bonding,” Proc. 6th Electronics Packaging Technology Conference, Singapore (2004) pp. 711-717.
[29] H. M. Ho, J. Tan, Y. C. Tan, B. H. Toh and P. Xavier, “Modeling energy transfer to copper wire for bonding in an inert environment,” Proc. 7th Electronics Packaging Technology Conference (2005) pp. 292-297.
[30] M. Deley and L. Levine, “Copper Ball Bonding Advances for Leading Edge Packaging,” Proc. Semicon Singapore 2005, Singapre(2005).
[31] C. C. Dong, A. Schwarz, D. V. Roth, 'Feasibility of Fluxless Reflow of Lead-free Solders in Hydrogen and Forming Gas', Presentation at NEPCON Malaysia 1997, Manufacturing Session (1), Kuala Lumpur, Malaysia, June (1997).
[32] A. Shah, M. Mayer, Y. Zhou, S.J. Hong, J. T. Moon, Proceedings of IEEE 58th Electronics Components and Technology Conference, Lake Buena Vista, Florida, USA (2008) pp. 2123–2130.
[33] C. W. Tan and R. D. Abdul, “Cratering on Thermosonic Copper Wire Ball Bonding”, Journal of Materials Engineering and Performance , Vol. 11 (2002) pp. 283-287
[34] G. Omar and C. W. Tan, “Development of Copper Wire Bonding Technology,” Semiconductor 1st Manufacturing Technology Symposium, DBP Publisher, Malaysia (1999).
[35] H. Clauberg, P. Backus, B. Chylak , “Nickel–palladium bond pads for copper wire bonding”, Microelectronics Reliability, Vol. 51 (2011) pp.75–80.
[36] N. Srikanth, J. Premkumar, M. Sivakumar, Y. M. Wong and C. J. Vath III, “Effect of wire purity on copper wire bonding”, Proc. 9th Electronics Packaging Technology Conference, Singapore (2007) pp. 755-759.
[37] S. Kaimori, T. Nonaka, A. Mizoguchi, “The Development of Cu Bonding Wire with Oxidation-resistant Metal Coating”, IEEE Trans. Adv. Packag., Vol. 29, No. 2 (2006) pp. 227-231.
[38] I. Qin, Hui Xu, Clauberg, H.; Cathcart, R.; Acoff, V.L.; Chylak, B.; Cuong Huynh, 'Wire bonding of Cu and Pd coated Cu wire: Bondability, reliability, and IMC formation,' IEEE Electronic Components and Technology Conference (2011) pp.1489-1495.
[39] S. Murali, N. Srikanth and C. J. Vath, III, “An analysis of intermetallics formation of gold and copper ball bonding on thermal aging”, Materials Research Bulletin, Vol. 38, No. 4 (2003) pp. 637-646.
[40] S. Murali, N. Srikanth and C. J. Vath, III, “Effect of wire size on the formation of intermetallics and Kirkendall voids on thermal aging of thermosonic wire bonds,” Materials Letters, Vol. 58, No. 25 (2004) pp. 3096-3101.
[41] F. W. Wulff, C. D. Breach, D. Stephan, Saraswati and K. J. Dittmer, “Characterization of intermetallic growth in copper and gold ball bonds on aluminum metallization,” Proc. 6th Electronics Packaging Technology Conference, Singapore (2004) pp. 348-353.
[42] T. H. Chuang, C. C. Chang, C. H. Chuang, J. D. Lee and H. H. Tsai, 'Formation and Growth of Intermetallics in an Annealing-Twinned Ag-8Au-3Pd Wire Bonding Package During Reliability Tests,' IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 3, No.1 (2013) pp.3-9.
[43] C. J. Hang, C. Q. Wang, M. Mayer, Y. H. Tian, Y. Zhou and H. H. Wang, “Growth behavior of Cu/Al intermetallic compounds and cracks in copper ball bonds during isothermal aging,” Microelectronics Reliability, Vol. 48, No. 3 (2008) pp. 416-424.
[44] M. Drozdov, G. Gur, Z. Atzmon and W. D. Kaplan, “Detailed investigation of ultrasonic Al-Cu wire-bonds: I. . Intermetallic formation in the as-bonded state”, Journal of Materials Science, Vol. 43, No. 18 (2008) pp. 6029-6037.
[45] H. Xu, C. Liu, V. V. Silberschmidt and Z. Chen, “A reexamination of the mechanism of thermosonic copper ball bonding on aluminium metallization pads”, Scripta Materialia, Vol. 61, No. 2 (2009) pp. 165-168.
[46] H. J. Kim, J. Y. Lee, K. W. Paik, K. W. Koh, J. Won, S. Choe, J. Lee, J. T. Moon and Y. J. Park, “Effects of Cu/Al intermetallic compound (IMC) on copper wire and aluminum pad bondability”, IEEE Transactions on Components and Packaging Technologies, Vol. 26, No. 2 (2003) pp. 367-374.
[47] H. W. Hsueh, F. Y. Hung, T. S. Lui and L. H. Chen, Microelectronics Reliability 51 (2011) pp.2243–2249.
[48] Properties and Selection: Nonferrous Alloys and Pure Metals, Metals Handbook, 9th ed., vol. 2. Asm Intl.
[49] H.M. Ho, W Lam, S. Stoukatch, P Ratchev, Vath III Charles J and E Beyne. Microelectron Reliability Vol. 43 (2003), 912–23.
[50] Kyung-Ah Yoo; Chul Uhm; Tae-Jin Kwon; Jong-Soo Cho; Jeong-Tak Moon; , 'Reliability study of low cost alternative Ag bonding wire with various bond pad materials,' IEEE Electronics Packaging Technology Conference (2009) pp.851-857
[51] J. S. Cho, K. A. Yoo, S. J. Hong, J. T. Moon, Y. J. Lee, W. Han, H. Park, S. W. Ha, S. B. Son, S. H. Kang and K. H. Oh, 'Pd effects on the reliability in the low cost Ag bonding wire,' IEEE Electronic Components and Technology Conference (2010) pp.1541-1546
[52] R. E. Reed-Hill, 'Physical Metallurgy Principles', D. Van Nostrand Company, Second Edition (1973).
[53] S. Mahajan, C. S. Pande, M. A. Imam and B. B. Rath, “Formation of Annealing Twins in f.c.c. Crystals”, Acta Mater, Vol. 45, No. 6 (1997), pp. 2633-2638.
[54] H. C. H. Carpenter and S. Tamura. “ The Formation of Twinned Metallic Crystals” Proceedings of the Royal Society A, Vol. 113 (1926) pp. 161-182
[55] H. Gleiter, “The Formation of Annealing Twins”, Acta Metall., Vol. 17 (1969) pp. 1421-1428.
[56] R. L. Fullman and J. C. Fisher, “Formation of Annealing Twins During Grain Growth”, J. Appl. Phys., Vol. 22 (1951) pp.1350-1355.
[57] A. Rohatgi, K.S. Vecchio, G.T. Gray III, “The influence of stacking fault energy on the mechanical behavior of Cu and Cu-Al alloys: Deformation twinning, work hardening, and dynamic recovery”, Metall. Mater. Trans. A, Vol. 32 (2001) pp. 135-145.
[58] C. S. Pande, B. B. Rath, M. A. Imam, “Effect of annealing twins on Hall–Petch relation in polycrystalline materials”, Mater. Sci. Eng. A, Vol. 367 (2004) pp. 171–175.
[59] M. Gerardin, Compt. Rend., Vol. 53 (1861) pp. 727.
[60] W. Seith and H.Etzold, Z. Elektrochem., Vol. 40 (1934) pp. 829-832.
[61] Wever H., Z. Electrochem., Vol.60 (1956) pp.1170.
[62] H. B. Huntington and A.R. Grone, “Current-induced marker motion in gold wires”, J. Phys. Chem. Solids 20 (1961) pp. 76-87.
[63] A. R. Grone, “Current induced marker motion in copper,” J. Phys. Chem. Solids, vol. 20, No. 1 and 2 (1961) pp. 88-98.
[64] P. S. Ho and H. B. Huntington, “Electromigration and void observation in silver,” J. Phys. Chem. Solids, vol. 27 (1966) pp. 1319-1329.
[65] V. B. Fiks, “On the Mechanism of the Ions in Metal”, Soviet Phys. Solid St. Vol. 1 (1959) pp. 14-18.
[66] I. A. Blech, “Electromigration in thin aluminum films on titanium nitride”, J. Appl. Phys. Vol. 47 (1976) pp. 1203-1208.
[67] J. R.Black, “Mass transport of aluminum by momentum exchange with conducting electrons.” Proc. 6th Ann. Int. Rel. Phys. Symp. (1967) pp. 148-159
[68] C. Durkan, M.E. Welland, “Analysis of failure mechanisms in electrically stressed gold nanowires” , Ultramicroscopy, Vol. 82 (2000) pp.125-133.
[69] I. Ames, F. M. d'Heurle, R. E. Horstmann, “Reduction of Electromigration in Aluminum Films by Copper Doping”, IBM Journal of Research and Development, Vol. 14 (1970) pp. 461-463.
[70] F. M. d'Heurle, “The effect of copper additions on electromigration in aluminum thin films,” Metallurgical Transactions, Vol. 2 (1971) pp 683-689.
[71] K. N. Tu, “Recent advances on electromigration in very-large-scale-integration of interconnects,” J. Appl. Phy., Vol. 94 (2003) pp.5451-5473.
[72] K. L. Lee, C. K. Hu and K. N. Tu, “In situ scanning electron microscope comparison studies on electromigration of Cu and Cu(Sn) alloys for advanced chip interconnects”, J. Appl. Phys., Vol. 78 (1995) pp. 4428-4437.
[73] J. Cho, C. V. Thompson , “Grain size dependence of electromigration‐induced failures in narrow interconnects,”Appl. Phys. Lett., Vol. 54 (1989) pp. 2577-2579.
[74] A. S. Oates, D. L. Barr.” Lattice electromigration in narrow Al-alloy thin-film conductors at low-temperatures,” J. Electron. Mater., Vol. 23 (1994) pp. 63-66.
[75] K. Wu, W. Baerg and P. Jupiter, “Effects of aluminum microstructure on electromigration using a new reactive ion etching and scanning electron microscopy technique”, Appl. Phys. Lett., vol. 58 (1991) pp. 1299-1301.
[76] C. K. Hu, R. Rosenberg and K. Y. Lee, “Electromigration path in Cu thin-film lines”, Appl. Phys. Lett., Vol. 74 (1999) pp. 2945-2947.
[77] C. K. Hu, L. Gignac, B. Baker, E. Liniger, R. Yu, “Impact of Cu microstructure on electromigration reliability,” International Interconnect Technology Conference, IEEE (2007) pp.93-95.
[78] D. P. Field, D. Dornisch, H. H. Tong, “Investigating the microstructure-reliability relationship in Cu damascene lines”, Scripta Materialia, Vol. 45 (2001) pp. 1069-1075.
[79] E. Zin, N. Michael, S. H. Kang , K. H. Oh, U. Chul, J. S. Cho3, J. T. Moon and C. U. Kim, “Mechanism of Electromigration in Au/Al Wirebond and its Effects,” IEEE Electronic Components and Technology Conference (2009) pp.943-947.
[80] P. K. Tse and T.M. Lach, “Aluminum Electromigration of 1- mil Bond Wire in Octal Inverter Integrated Circuits”, Proc. 45th IEEE ECTC, Las Vegas, NV (1995) pp. 900-905.
[81] F. d’Heurle, L. Berenbaum and R. Rosenberg, “On the structure of aluminum films”, Trans. AIME, Vol. 242 (1968) pp. 502-511.
[82] C. J. Santoro, “Thermal Cycling and Surface Reconstruction in Aluminum Thin Films”, J. Electrochem. Soc. Vol. 116 (1969) pp. 361-364.
[83] K. Sato, T. Oi and H. Matsumaru, “Hillock-free aluminum thin films for electronic devices”, T. Okubo, and T. Nishimura, Metall. Trans. Vol. 2 (1971) pp. 691-697.
[84] E. Philofsky, K. Ravi, E. Hall and J. Black, “Surface reconstruction of aluminum metallization – a new potential wear out mechanism”, Proc. 9th Annual IEEE Reliability Physics Symp., Las Vegas, NV, USA, (1971) pp. 120-128.
[85] R. A. Serway, “Principles of Physics” (2nd ed.). Fort Worth, Texas; London: Saunders College Pub. (1998) pp. 602.
[86] D. C. Giancoli, “Physics for Scientists and Engineers with Modern Physics” (4th ed.). Upper Saddle River, New Jersey: Prentice Hall. (2009) pp. 658.
[87] G. L. Baldini, I. Demunari, A. Scorzoni and F. Fantini, ”Electromigration in thin-films for microelectronics”, Microelectron. Reliab. 33 (1993) pp.1779–805
[88] M. Etzion, I. A. Blech and Y. Komem, “Study of conductive gold film lifetime under high current densities,” J. Appl. Phys. Vol. 46 (1975) pp.1455-1458.
[89] R. E. Hummel and H. J. Geier, “Activation energy for electrotransport in thin silver and gold films,” Thin Solid Films, Vol. 25 (1975) pp.335-342
[90] K. L. Tai and M. Ohring, “Grain boundary electromigration in thin films II. Tracer measurements in pure Au,” J. Appl. Phys. Vol. 48 (1977) pp.36-45.
[91] S. Kilgore, C. Gaw, H. Henry, D. Hill and D. Schroder, “Electromigration of Electroplated Gold Interconnects”, MRS Proceedings, Vol. 863 (2005) pp. B8.30.1-6.
[92] N. A. Gjostein, “Surfaces and Interfaces”, edited by J.J. Burke, N. L. Reed, and V. Weiss (Syracuse U. P., Syracuse, N. Y. ,1968) pp. 271.
[93] R. E. Hoffman and D. Turnbull, ”Lattice and Grain Boundary Self‐Diffusion in Silver”, J. Appl. Phys., Vol. 22 (1951) pp. 634-639.
[94] H. R. Patil and H. B. Huntington, “Electromigration and associated void formation in silver”, J. Phys. Chem. Solids, Vol. 31 (1970) pp. 463-474.
[95] J. R. Lloyd, J. Clemens and R. Snede, “Copper metallization reliability”, Microelectron. Reliab., Vol. 39 (1999) pp. 1595-1602.
dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17666-
dc.description.abstract經由抽線和退火製程的改善,可以產生大量退火雙晶的銀金鈀線,在600℃時效180分鐘,退火雙晶銀金鈀線幾乎保持相同晶粒大小,擁有很高的熱穩定性,晶粒含雙晶比例更可達到65%,遠高於傳統的銀金鈀線材以及純金線、純銅線。此高退火雙晶比例使其在高溫處理後仍擁有良好的抗拉強度、降服強度、延展性,均高於傳統銀金鈀線,且不會降低其導電率。
此新穎的退火雙晶銀金鈀線,線徑17.5μm可承受0.3A電流達61小時,遠高於傳統銀金鈀線材的25小時,達兩倍以上壽命。此結果可歸因於退火雙晶強化,及線材通電時,產生之特殊階梯狀結構和表面再建構形貌導致。此表面再建構由電子風力驅動所造成的主滑移及垂直方向的次滑移,造成了原子堆積並產生hillock。而此線材通電不同時間後,破壞強度及延展性均高於傳統銀金鈀線。這些優越的性質,使退火雙晶銀金鈀線極具潛力取代現有的4N金線以及傳統銀金鈀線,作為打線接合的封裝銲線。
而若降低金或鈀的比例,除了可降低電阻外,更可以提高通電測試的壽命,不含金的銀鈀線材,通電壽命超越銀金鈀線材,這是由於銀本身具良好導電導熱性,提高了通電時的散熱效果,降低焦耳熱及溫度,進而阻止電遷移現象發生。雖然純銅具有更好的導電導熱性,然而即使是較耐腐蝕的銅鍍鈀線,其抗氧化力仍然極差,在室溫通電會產生氧化現象,使局部電流密度大增而提早斷裂。
然而降低金或鈀的比例,也會影響熱穩定性,使其晶粒在高溫時會略微增大。但除非使用純銀,不然即使在600℃時效120分鐘,其晶粒仍然不會成長到接近線徑。由於擁有高抗電遷移性和優於現有線材的熱穩定性,銀鈀線材亦是極具潛力的封裝銲線。
zh_TW
dc.description.abstractThe Ag-8Au-3Pd wire can achieve enrichment of annealing twins by improvement of drawing and annealing processes. It remains almost the same grain size during aging at 600℃ for 180 minutes, thus possesses high thermal stability. Besides, the twinned-grain percentage of this wire reachs 65%, more than conventional Ag-8Au-3Pd wire, gold wire and copper wire. After high temperature storage, this wire still has higher tensile strength, yield stress, elongation than conventional Ag-8Au-3Pd wire, keeping high electrical conductivity meantime.
This innovative annealing-twinned Ag-8Au-3Pd wire with diameter of 17.5 μm can sustain 0.3A for 61 hours, which is much higher than conventional Ag-8Au-3Pd wire’s 25hours, reaching more than twice the life. This result can be attributed to the annealing twins’ strengthening effect, the stepwise structure and reconstruction during curren stressing. The reconstruction is produced by primary slip and perpendicular secondary slip, the two directional slips result atom pile up and generate hillock. Theis annealing-twinned Ag-8Au-3Pd wire possesses higher tensile strength and elongation than conventional Ag-8Au-3Pd wire with different current stressing time. Since these superior properties, this annealing-twinned Ag-8Au-3Pd wire has potential to replace the existing gold and conventional Ag-8Au-3Pd bonding wire.
The conducitivity and lifetime during current stressing can be increasd by reducing the addition of Au or Pd. The AgPd wire having much higher lifetime than annealing-twinned Ag-8Au-3Pd because silver possess high electrical and thermal conductivity, lower the Joule heating and temperature during current stressing, retarding the electromigration. Although pure copper has higher electrical and thermal conductivity than silver alloy, the most anti-corrosive CuPd wire oxidate during current stressing at room temperature, leading to a higher local current density and breaking at early stage, having a lowest lifetime.
However, reducing the addition of Au or Pd also decreases the thermal stability of wire, leading to a larger grain size after high temperatre storage. However, the silver bonding wires’ grain sizes are still smaller than wire diameter after aging at 600℃ for 120 minutes, except pure silver wire. Owing to high resistance to electromigration and better thermal stability, the Ag low Pd wire also has potential to replace existing bonding wires.
en
dc.description.provenanceMade available in DSpace on 2021-06-08T00:29:19Z (GMT). No. of bitstreams: 1
ntu-102-D99527020-1.pdf: 7497389 bytes, checksum: d6ae6a97599c5d4c18f1a4839e94e0bb (MD5)
Previous issue date: 2013
en
dc.description.tableofcontents誌謝 ........................................................................................................................... I
摘要 ........................................................................................................................ III
Abstract ................................................................................................................... IV
目錄 ........................................................................................................................ VI
表目錄 .................................................................................................................. VIII
圖目錄 .................................................................................................................... IX
第一章 前言............................................................................................................. 1
1-1 研究背景.................................................................................................... 1
1-2 研究動機.................................................................................................... 2
1-3研究目的..................................................................................................... 3
第二章 文獻回顧 ..................................................................................................... 6
2-1 打線接合(wire bonding) ............................................................................. 6
2-1-1 金線 ................................................................................................ 7
2-1-2 銅線及銅鍍鈀線 ............................................................................. 7
2-1-3 鋁線 ............................................................................................... 11
2-1-4 銀及銀合金線 ................................................................................ 11
2-2 時效 ......................................................................................................... 13
2-3 雙晶(twin) ................................................................................................ 13
2-3-1 雙晶的產生 ................................................................................... 13
2-3-2 面心金屬立方金屬疊差能與雙晶關係......................................... 15
2-3-3 雙晶的性質 ................................................................................... 16
2-4 電遷移(electromigration) ......................................................................... 17
2-4-1 電遷移歷史及理論發展 ................................................................ 17
VII
2-4-2 IC導線的電遷移 ........................................................................... 20
2-4-3 電遷移對打線接合的影響 ............................................................ 23
2-5 表面再建構 .............................................................................................. 24
第三章 實驗方法 ................................................................................................... 49
3-1 線材製作.................................................................................................. 49
3-2 高溫時效實驗 .......................................................................................... 49
3-3 FIB觀察 ................................................................................................... 49
3-4 拉伸實驗.................................................................................................. 50
3-5 通電流測試 .............................................................................................. 50
3-6 電子顯微鏡觀察 ...................................................................................... 51
第四章 結果與討論 ............................................................................................... 58
4-1退火雙晶銀金鈀線材與傳統銀金鈀線及金線、銅線之機械性質與微結構 ........................................................................................................................ 58
4-1-1 晶粒結構 ....................................................................................... 58
4-1-2 機械性質 ....................................................................................... 61
4-2退火雙晶銀金鈀線與傳統銀金鈀線之電遷移實驗 ................................. 78
4-2-1 退火雙晶銀金鈀線和傳統銀金鈀線之比較 ................................. 78
4-2-2 退火雙晶銀金鈀線之特殊表面再建構......................................... 80
4-3不同合金組成對線材通電測試壽命影響................................................. 96
4-3-1 電阻率對通電平均壽命之影響 .................................................... 96
4-3-2 以電阻溫度係數和Black’s Law求電遷移能量 ........................... 98
4-4不同合金組成線材之晶粒成長與時間關係 ............................................107
第五章 結論..........................................................................................................121
參考文獻 ...............................................................................................................123
作者簡介 ...............................................................................................................133
dc.language.isozh-TW
dc.title電子封裝銀合金線之電遷移與退火晶粒結構研究zh_TW
dc.titleElectromigration and Annealing Grain Structure of Ag Alloy Wires for Electronic Packagingen
dc.typeThesis
dc.date.schoolyear101-2
dc.description.degree博士
dc.contributor.oralexamcommittee薛富盛,吳春森,吳醒非,蔡幸樺,李俊德
dc.subject.keyword退火雙晶,銀金鈀線,電遷移,封裝銲線,銀鈀線,zh_TW
dc.subject.keywordAnnealing twin,Ag-8Au-3Pd wire,Electromigration,Bonding wire,AgPd wire,en
dc.relation.page134
dc.rights.note未授權
dc.date.accepted2013-07-05
dc.contributor.author-college工學院zh_TW
dc.contributor.author-dept材料科學與工程學研究所zh_TW
顯示於系所單位:材料科學與工程學系

文件中的檔案:
檔案 大小格式 
ntu-102-1.pdf
  未授權公開取用
7.32 MBAdobe PDF
顯示文件簡單紀錄


系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。

社群連結
聯絡資訊
10617臺北市大安區羅斯福路四段1號
No.1 Sec.4, Roosevelt Rd., Taipei, Taiwan, R.O.C. 106
Tel: (02)33662353
Email: ntuetds@ntu.edu.tw
意見箱
相關連結
館藏目錄
國內圖書館整合查詢 MetaCat
臺大學術典藏 NTU Scholars
臺大圖書館數位典藏館
本站聲明
© NTU Library All Rights Reserved