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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17583完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 莊東漢 | |
| dc.contributor.author | Hong-Yuan Chen | en |
| dc.contributor.author | 陳鴻元 | zh_TW |
| dc.date.accessioned | 2021-06-08T00:23:06Z | - |
| dc.date.copyright | 2013-07-26 | |
| dc.date.issued | 2013 | |
| dc.date.submitted | 2013-07-18 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17583 | - |
| dc.description.abstract | 近年來，半導體產業發展快速，各類電子產品也不斷進步，而在進步的同時也遇到不少瓶頸，例如電晶體尺寸不斷縮小，使其製程難度日益增加，讓其發展方向從二維轉向三維；由於LED功率不斷提高，以往的LED固晶方式無法滿足其需求，讓目前使用的構裝方式面臨考驗。本研究即使用新的構裝方式-固液擴散接合，利用鍍上一高熔點、一低熔點金屬薄膜，使其在低熔點金屬液化時即可反應成高熔點介金屬化合物，以達到低溫接合高溫應用的目的。
本研究第一部分即利用Sn薄膜作為低熔點金屬，晶片端的Cu及引腳架端的Ag作為高熔點金屬，來進行反應接合LED晶片，並研究各溫度及接合時間之試片的介金屬成長情形及接點強度。 本研究第二部分為利用固液擴散接合法進行3D-IC之構裝，此部分亦使用Cu/Sn系統作為主要材料，並且針對接合界面所產生的孔洞進行補強，方法為利用電鍍一層銀薄膜，使其在接合時形成Ag3Sn，即可達到填補因另一不平坦介金屬所產生之孔洞的目的。 本研究第一部分結果顯示，使用SLID接合法可達到低溫接合高溫應用的目的，其某些條件之接點強度也達到使用標準，故能使用本接合法來取代以往的LED固晶法，本研究第二部分結果顯示利用銀的介金屬化合物，可有效填補因其他扇貝狀介金屬化合物所造成的孔洞，使接點強度上升。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-08T00:23:06Z (GMT). No. of bitstreams: 1 ntu-102-R00527031-1.pdf: 13022891 bytes, checksum: b54b00dfbb4dbda86ee83fcddb34ddf8 (MD5) Previous issue date: 2013 | en |
| dc.description.tableofcontents | 目錄
致謝…………………………………………………………………………………Ⅰ 摘要…………………………………………………………………………………Ⅱ Abstract……………………………………………………………………………Ⅲ 目錄…………………………………………………………………………………Ⅴ 圖目錄………………………………………………………………………………Ⅶ 表目錄………………………………………………………………………………Ⅸ 第一章 前言…………………………………………………………………………1 1.1 發光二極體簡介……………………………………………………………1 1.2 3 Dimensional Integrated Circuits(3D-IC)簡介…………………5 第二章 文獻回顧……………………………………………………………………7 2.1 電子構裝及發展……………………………………………………………7 2.2 固液擴散接合簡介………………………………………………………11 2.3 介金屬性質文獻回顧……………………………………………………15 2.4 界面反應動力學…………………………………………………………18 2.4.1 界面控制反應……………………………………………………19 2.4.2 擴散控制反應……………………………………………………19 2.5 界面反應相關文獻回顧…………………………………………………20 第三章 實驗………………………………………………………………………25 3.1 LED 接合材料及設備………………………………………………………25 3.2 LED 接合實驗方法…………………………………………………………26 3.3 LED 接合強度測試………………………………………………………27 3.4 3D-IC 材料及設備………………………………………………………27 3.5 3D-IC 實驗方法……………………………………………………………28 第四章 結果與討論………………………………………………………………35 4.1 LED 接合介面反應 ………………………………………………………35 4.2 LED 介金屬成長動力學……………………………………………………42 4.3 LED 接合強度試驗…………………………………………………………44 4.4 3D-IC 界面反應……………………………………………………………53 4.5 3D-IC 接合強度測試………………………………………………………53 第五章 結論………………………………………………………………………56 第六章 參考文獻…………………………………………………………………57 圖目錄 圖1-1 常見LED元件結構示意圖[自繪]……………………………………………2 圖1-2 常見之LED結構圖：5mm LED及高效能LED[7]……………………………2 圖1-3 LED之溫度與發光效率關係圖[4]…………………………………………3 圖1-4 LED隨年代發展及其所需熱阻值變化[6]…………………………………3 圖1-5 晶片上之電晶體數量隨時間變化之成長趨勢[9]…………………………6 圖1-6 閘極長度隨時間變化之趨勢[10]…………………………………………6 圖2-1 電子構裝之四大目的[18]…………………………………………………9 圖2-2 電子構裝層次示意圖[19]…………………………………………………9 圖2-3 三種連線技術示意圖[20]…………………………………………………10 圖2-4 PTH及SMT各形式示意[18]………………………………………………10 圖2-5 固液擴散接合示意圖[自繪]………………………………………………16 圖2-6銅錫二元相圖[58]…………………………………………………………23 圖2-7銀錫二元相圖[58]…………………………………………………………24 圖2-8 銀銦二元相圖[58]…………………………………………………………24 圖3-1 本實驗所使用各試片界面金相圖(a)引腳架(b)矽晶片鍍銀薄膜(c)矽晶片……………………………………………………………………………………29 圖3-2 (a)SLID接合設備(b)試片加熱載台(c)加熱溫度控制器………………30 圖3-3 研磨拋光機(Buehler Metaserv 2000)…………………………………31 圖3-4 電子顯微鏡JEOL SEM，OXFORD Instruments EDS……………………31 圖3-5 Nordson Dage 4000慢速推球機…………………………………………32 圖3-6 LED接合實驗流程…………………………………………………………33 圖3-7 LED接合示意圖……………………………………………………………33 圖3-8 3D-IC實驗流程……………………………………………………………34 圖3-9 3D-IC接合示意圖…………………………………………………………34 圖4-1 Si/Cu晶片與Ag/Cu引腳架在250℃下接合(a)5分鐘(b)10分鐘(c)15分鐘之SEM界面介金屬金相…………………………………………………………37 圖4-2 Si/Cu晶片與Ag/Cu引角架在275℃下接合(a)5分鐘(b)10分鐘(c)15分鐘之SEM界面介金屬金相…………………………………………………………38 圖4-3 Si/Cu晶片與Ag/Cu引角架在300℃下接合(a)5分鐘(b)10分鐘(c)15分鐘之SEM界面介金屬金相…………………………………………………………39 圖4-4 Si/Cu晶片與Ag/Cu引角架在300℃下接合15分鐘之Line Scan以及四種元素(a)Si (b)Cu (c)Ag (d)Sn之分佈情形……………………………………40 圖4-5 Si/Cu晶片與Ag/Cu引角架在325℃下接合(a)5分鐘(b)10分鐘(c)15分鐘之界面介金屬金相………………………………………………………………41 圖4-6 Cu3Sn厚度(x)對反應時間(t)關係圖……………………………………43 圖4-7 將厚度x與時間t值取對數值之作圖…………………………………43 圖4-8 接點強度測試示意圖………………………………………………………46 圖4-9 接合250℃5及10分鐘之斷面成分分析 (a)250℃ 5分鐘(引腳架端) (b)250℃ 10分鐘(晶片端) (c)(d)250℃ 10分鐘混合區域放大………………47 圖4-10 接合250℃ 15分鐘之斷面成分分析(晶片端)(a)全斷面範圍 (b)混合區域放大………………………………………………………………………………48 圖4-11 275℃接合5分鐘之斷面成分分析及強度比較(引腳架端)(a)強度偏低(b)中強度(c)強度偏高…………………………………………………………………49 圖4-12 275℃接合15分鐘斷面成分分析(晶片端)(a)全貌 (b)混合區域放大……………………………………………………………………………………50 圖4-13 300℃接合5分鐘之斷面成分分析(晶片端)(a)高強度(b)低強度……51 圖4-14 325℃接合5分鐘之斷面成分分析(a)全貌(b)混合區域放大…………52 圖4-15 3D-IC未鍍銀接合250℃30分鐘界面形貌(a)(b)高倍率(c)低倍率…54 圖4-16 3D-IC鍍銀接合250℃30分鐘界面形貌(a)(b)高倍率(c)低倍率……55 表目錄 表1-1 常見之銲錫成分及熔點[15]………………………………………………4 表2-1 覆晶技術常見合金成分及性質[42]………………………………………17 表2-2 銅、錫、及四種常見介金屬之晶體結構及晶格常數[42]………………17 表3-1電鍍Sn鍍液配方及操作條件……………………………………………29 表3-2 電鍍Ag鍍液配方及操作條件……………………………………………29 表4-1 各接合參數之Cu3Sn平均厚度……………………………………………42 表 4-2各溫度時間之接合強度……………………………………………………46 | |
| dc.language.iso | zh-TW | |
| dc.title | 低溫固液擴散接合在3D-IC及LED封裝之應用 | zh_TW |
| dc.title | Application of low temperature solid-liquid interdiffusion bonding for 3D-IC and LED packaging | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 101-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃振東,王彰盟,鄭智元,謝慧霖 | |
| dc.subject.keyword | 低溫,固液擴散,接合,封裝, | zh_TW |
| dc.subject.keyword | 3D-IC,LED,packaging, | en |
| dc.relation.page | 60 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2013-07-18 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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