請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17103
標題: | 遠程聲子及矽鍺三閘極鰭式電晶體及環繞式閘極電晶體電子遷移率理論模型研究 Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge |
作者: | Yi-Jen Tseng 曾怡仁 |
指導教授: | 劉致為 |
關鍵字: | 電子遷移率,n型金氧半電晶體,遠程聲子,矽,鍺,鰭式電晶體,環繞式閘極電晶體,薛丁格-泊松, mobility,nMOSFET,remote phonon,Si,Ge,FinFET,GAA,Schrodinger-Poisson solver, |
出版年 : | 2013 |
學位: | 碩士 |
摘要: | The mobility is important to the MOSFET devices since it is directly proportional to the on current. In this thesis, we use MATLAB to coding the mobility simulation. The high-k material gate oxide reduces the mobility of device because of remote phonon scattering. We modify the remote phonon theoretical model in nMOSFET and contrary the simulate data and experimental data. For 3D devices, i.e. FinFET, or GAA FET(gate all around), mobility simulation, first we construct two dimensional the Schrodinger-Poisson solver. Next we derive the nanowires formula, coding the two dimensional electrical-quantum confinement scattering mechanism, and contrary the mobility simulation result to the one dimensional electrical-quantum mobility simulation in Si & Ge. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17103 |
全文授權: | 未授權 |
顯示於系所單位: | 光電工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-102-1.pdf 目前未授權公開取用 | 15.17 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。