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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 劉致為 | |
dc.contributor.author | Yi-Jen Tseng | en |
dc.contributor.author | 曾怡仁 | zh_TW |
dc.date.accessioned | 2021-06-07T23:56:36Z | - |
dc.date.copyright | 2013-08-26 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-08-19 | |
dc.identifier.citation | [1] G. E. Moore, “Cramming More Components onto Integrated Circuits,” Proceedings of the IEEE, vol. 86, no. 1, pp. 82-85, 1998.
[2] C. -H. Jan, U. Bhattacharya, R. Brain, S. -J. Choi, G. Curello, G. Gupta, W. Hafez, M. Jang, M. Kang, K. Komeyli, T. Leo, N. Nidhi, L. Pan, J. Park, K. Phoa, A. Rahman, C. Staus, H. Tashiro, C. Tsai, P. Vandervoorn, L. Yang, J.-Y. Yeh, and P. Bai, “A 22nm SoC Platform Technology Featuring 3-D Tri-Gate and High-k/Metal Gate, Optimized for Ultra Low Power, High Performance and High Density SoC Applications,” International Electron Devices Meeting,, vol. 1, pp. 44-47, 2012. [3] S. Takagi, A. Toriumi, M. Iwase, and H. Tango, “On the Universality of Inversion Layer Mobility in Si MOSFET's: Part I-Effects of Substrate Impurity Concentration,” IEEE Transactions on Electron Devices, vol. 41, no. 12, pp. 2357-2362, 1994. [4] S. Takagi, A. Toriumi, M. Iwase, and H. Tango, “On the Universality of Inversion Layer Mobility in Si MOSFET's: Part II-Effects of Surface Orientation,” IEEE Transactions on Electron Devices, vol. 41, no. 12, pp. 2363-2368, 1994. [5] M. Casse, X. Garros, L. Brunet, and G. Reimbold, “Impact of the Metal Gate on Carrier Transport in HK/MG Transistors,” ECS Meet, vol. 28, pp. 165-176, 2010. [6] B. T. Moore, and D.K. Ferry, “Remote Polar Phonon Scattering in Si Inversion Layers,” Journal of Applied Physics, vol. 51,No.5, pp. 2603-2605, 1980. [7] M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, “Effective Electron Mobility in SI Inversion Layers in Metal-Oxide-Semiconductor Systems with a High-k Insulator: The Role of Remote Phonon Scattering,” Journal of Applied Physics, vol.90 , no.9, pp. 4587-4608, 2001. [8] B. Laikhtman, and P. M. Soloman, “Remote Phonon Scattering in Field-Effect Transistors with a High κ Insulating Layer,” Journal of Applied Physics, vol.103, no.314, pp. 014501, 2008. [9] Y. Zhang, “HOLE MOBILITY IN STRAINED GE AND III-V P-CHANNEL INVERSION LAYERS WITH SELF-CONSISTENT VALENCE SUBBAND STRUCTURE AND HIGH-k INSULATORS,”PH.D Thesis, University of Massachusetts, USA, 2010. [10] D. Esseni, P. Palestri, and L. Selmi, Nanoscale MOS Transistors Semi-Classical Transport and Applications, Cambridge University Press, Italy, 2011. [11] T. O’Regan, and M. V. Fischetti, “Remote Phonon Scattering in Si and Ge with SiO2 and HfO2 Insulators:Does the Electron Mobility Determine Short Channel Performance?,” Japanese Journal of Applied Physics, vol.46, no.5B, pp. 3265-3272, 2007. [12] C. -M. Lin, H. -C. Chang, Y. -T. Chen, I -H. Wong, H. -S. Lan, S. -J. Luo, J. –Y. Lin, Y. -J. Tseng, C. W. Liu, Chenming Hu, and Fu-Liang Yang “Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ~43, ~2×10-3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response,” International Electron Devices Meeting, vol.1, pp. 509-512, 2012. [13] IH. Tan, G. L. Snider, and E. L. Hu, “A Selfconsistent Solution of Schrodinger–Poisson Equations Using a Nonuniform Mesh,” Journal of Applied Physics, vol.68, pp. 4071-4076, 1990. [14] J. Wang, “DEVICE PHYSICS AND SIMULATION OF SILICON NANOWIRE TRANSISTORS,”PH.D Thesis, Perdue, USA, 2005. [15] M. Ali Pourghaderi, W. Magnus, B. Soree, K. D. Meyer, M. Meuris, and M. Heyns “General 2D Schrodinger-Poisson Solver with Open Boundary Conditions for nano-scale CMOS transistors,”Journal of Computational Electronics, no.7, pp. 475-484, 2008. [16] E. B. Ramayya, “MODELING OF MOBILITY IN A REGULAR SILICON NANOWIRE TRANSISTOR,”M.Ed Thesis, Arizona State University, USA, 2006. [17] A. Trellakis, A. T. Galick, A. Pacelli, and U. Ravaioli,, “Iteration Scheme for The Solution of the Two-dimensional Schrodinger-Poisson Equations in Quantum Structures,” Journal of Applied Physics, vol.81, no.12, pp. 7880-7884, 1997. [18] M. Bescond, N. Cavassilas and M. Lannoo, “Effective-Mass Approach for n-type Semiconductor Nanowire MOSFETs Arbitrarily Oriented,” Nanotechnology, vol.18, no.25, pp. 255201, 2007. [19] R. Trellakis, Z. Ren, A. Pacelli, S. Datta, M. S. Lundstrom, and D. Jovanovic, “Simulating Quantum Transport in Nanoscale Transistors: Real Versus Mode Space Approaches,” Journal of Applied Physics, vol.92, no.7, pp. 3730-3739, 2002. [20] S. Takagi, J. L. Hoyt, J. J. Welser, and and J. F. Gibbons, “Comparative Study of Phononlimited Mobility of Twodimensional Electrons in Strained and Unstrained Si Metal–oxide–semiconductor Fieldeffect transistors,” Journal of Applied Physics, vol.80, no.3, pp. 1567-1577, 1996. [21] D. Esseni, “On the Modeling of Surface Roughness Limited Mobility in SOI MOSFETs and Its Correlation to the Transistor Effective Field,” IEEE Transactions on Electron Devices, vol. 51, no. 3, pp. 394-401, 2004. [22] S. Yamakawa, H. Ueno, K. Taniguchi, C. Hamaguchi, and K. Miyatsuji, “Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method,” Journal of Applied Physics, vol.79, no.2, pp. 911-916, 1996. [23] G. Tsutsui, M. Saitoh, T. Saraya, T. Nagumo and Tosihro Hiramoto “Mobility Enhancement due to Volume Inversion in (110)-oriented Ultra-thin Body Double-gate nMOSFETs with Body Thickness less than 5 nm,” International Electron Devices Meeting, vol.1, pp. 729-732, 2005. [24] E. B. Ramayya, D. Vasileska, K. Taniguchi, S. M. Goodnick, and I. Knezevic, “Electron Transport in Silicon Nanowires: The Role of Acoustic Phonon Confinement and Surface Roughness Scattering,” Journal of Applied Physics, vol.104, no.6, pp. 063711, 2008. [25] Y. Lee, K. Kakushima, K. Natori, and H. Iwai, “Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis,” Journal of Applied Physics, vol.109, no.11, pp. 113712, 2011. [26] N. Xu, X. Sun, W. Xiong, C. Rinn, and Tsu-Jae King Liu, “MuGFET Carrier Mobility and Velocity: Impacts of Fin Aspect Ratio, Orientation and Stress” International Electron Devices Meeting, vol.1, pp. 194-197, 2010. [27] M. O. Baykan, C. D. Young, K. Akarvardar, P. Majhi, C. Hobbs, “Physical insights on comparable electron transport in (100) and (110) double-gate fin field-effect transistors,” Applied Physics Letters, vol.100, no.12, pp.123502, 2012 [28] K. Akarvardar, C. D. Young, M. O. Baykan, I. Ok, T. Ngai, K.-W. Ang, M. P . Rodgers, S. Gausepohl, P. Majhi, C. Hobbs, P. D. Kirsch, and R. Jammy, “On the Modeling of Surface Roughness Limited Mobility in SOI MOSFETs and Its Correlation to the Transistor Effective Field,” IEEE Electron Device Letters, vol. 33, no. 3, pp. 351-353, 2012. [29] Y.-J. Yang, W. S. Ho, C.-F. Huang, S. T. Chang, C. W. Liu, “Electron mobility enhancement in strained-germanium n-channel metaloxide-semiconductor field-effect transistors,” Applied Physics Letters, vol.91, no.10, pp.102103, 2007 [30] T. Rudenko, V. Kilchytska, N. Collaert, M. Jurczak, A. Nazarov, and D. Flandre, “Carrier Mobility in Undoped Triple-Gate FinFET Structures and Limitations of Its Description in Terms of Top and Sidewall Channel Mobilities,” IEEE Transactions on Electron Devices, vol. 55, no. 12, pp. 3532-3541, 2008. [31] S. -H. Hsu, H. -C. Chang, C. -L. Chu, Y -T. Cheng, W -H. Tu, F. -J. Hou, C. –H. Lo, P. -J. Sung, B. -Y. Chen, G. -W. Huang, G.-L. Luo, C.W.Liu, Chenming Hu, and Fu-Liang Yang,“Triangular-channel Ge NFETs on Si with (111) Sidewall-Enhanced Ion and Nearly Defect-free Channels,” International Electron Devices Meeting, vol.1, pp. 525-528, 2012. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17103 | - |
dc.description.abstract | The mobility is important to the MOSFET devices since it is directly proportional to the on current. In this thesis, we use MATLAB to coding the mobility simulation. The high-k material gate oxide reduces the mobility of device because of remote phonon scattering. We modify the remote phonon theoretical model in nMOSFET and contrary the simulate data and experimental data. For 3D devices, i.e. FinFET, or GAA FET(gate all around), mobility simulation, first we construct two dimensional the Schrodinger-Poisson solver. Next we derive the nanowires formula, coding the two dimensional electrical-quantum confinement scattering mechanism, and contrary the mobility simulation result to the one dimensional electrical-quantum mobility simulation in Si & Ge. | en |
dc.description.provenance | Made available in DSpace on 2021-06-07T23:56:36Z (GMT). No. of bitstreams: 1 ntu-102-R00941092-1.pdf: 15536017 bytes, checksum: 3f34a496f5a6f3223c376b48de47185f (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | 口試委員會審定書 #
RELATED PUBLICATION i 摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vii LIST OF TABLES xii Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Thesis Organization 2 Chapter 2 Theoretical Model Study For Remote -Phonon Scattering of nMOSFET 3 2.1 Introduction 3 2.2 Remote Phonon Scattering Theory Model 4 2.3 Remote Phonon Scattering Theory Model Modification in Nearly Interfacial Layer - Free MOSFET 11 2.4 The Simulation Result of Remote Phonon Scattering in nMOSFET for Si and Ge 16 2.5 Summary 23 Chapter 3 Two-Dimensional of FinFET with Schrodinger-Poisson Solver 24 3.1 Introduction 24 3.2 Physical Model for Schrodinger and Poisson equation 24 3.3 Simulation result 36 3.4 Summary 40 Chapter 4 Two-Dimensional Mobility Modeling of FinFET and GAA FET of Si & Ge 41 4.1 Introduction 41 4.2 Physical Model for scattering mechanisms in semiconductors nanowires 42 4.3 Mobility Derivation for Electron Mobility in Semiconductors Nanowires 47 4.4 Simulation results 50 4.5 Summary 70 Chapter 5 Conclusion 71 5.1 Summary 71 5.2 Future Work 72 REFERENCE 73 | |
dc.language.iso | en | |
dc.title | 遠程聲子及矽鍺三閘極鰭式電晶體及環繞式閘極電晶體電子遷移率理論模型研究 | zh_TW |
dc.title | Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林鴻志,張廖貴術,張守進 | |
dc.subject.keyword | 電子遷移率,n型金氧半電晶體,遠程聲子,矽,鍺,鰭式電晶體,環繞式閘極電晶體,薛丁格-泊松, | zh_TW |
dc.subject.keyword | mobility,nMOSFET,remote phonon,Si,Ge,FinFET,GAA,Schrodinger-Poisson solver, | en |
dc.relation.page | 77 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2013-08-20 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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