氮化鎵毫米波低雜訊及功率放大器之設計與 質子輻射可靠度分析

Abstract

本論文共分為三個主題。 主題一為採用 0.12-µm GaN HEMT 製程實現之 K/Ka 頻段低雜訊放大器，應用於無人機追蹤與高功率雷達系統。透過源極退化與寬頻匹配設計，該放大器在 23 至 33 GHz 的 3-dB 頻寬範圍內，達成 21 dB 的峰值增益與 2.3 dB 的雜訊指數，直流功率為 400 mW。 主題二為同樣基於 0.12-µm GaN HEMT 製程之 5G 毫米波功率放大器，目標應用於 FR2 頻段。此功率放大器在功率級採用兩組並聯放大結構，在 26 GHz 時可實現 10.3 dB 的峰值增益，3-dB 頻寬涵蓋 25.5 至 27 GHz。在 26 GHz 下，其 1 dB 壓縮點為 21 dBm，飽和輸出功率為 23.6 dBm，峰值功率附加效率達 3.3%。 第三部分探討質子輻射對 LNA、PA 與 GaN HEMT 的影響。在低劑量與中等劑量（200 和 1000 krad）時，輻射促進的退火效應與氫鈍化作用減少了陷阱數量，提升了轉導值，並改善了射頻性能。但在更高劑量（1500 krad）下，輻射損傷導致閾值電壓偏移、電荷捕獲與載子遷移率劣化。DC 測試結果進一步顯示，在 2 × 50 元件中，正電荷效應占主導，使閾值電壓降低且轉導增加；而在 4 × 50 元件中，200 krad 時的性能改善，隨著輻射劑量升高，逐漸被缺陷引起的遷移率劣化所取代。這些結果展現了 GaN 射頻元件的輻射耐受性，並強調了在太空與航太等輻射環境中，需採取劑量敏感設計以確保元件可靠性。

This thesis is divided into three main topics. The first topic presents a K/Ka-band low-noise amplifier (LNA) implemented using a 0.12-µm GaN HEMT process, targeting applications such as unmanned aerial vehicle (UAV) tracking and high-power radar systems. By employing source degeneration and wideband matching techniques, the proposed LNA achieves a peak gain of 21 dB and a noise figure of 2.3 dB within a 3-dB bandwidth ranging from 23 to 33 GHz, with a DC power consumption of 400 mW. The second topic introduces a 5G millimeter-wave power amplifier (PA), also realized using the 0.12-µm GaN HEMT process, and intended for FR2 band applications. The PA adopts two parallel amplifier paths at the output stage, delivering a peak gain of 10.3 dB at 26 GHz, with a 3-dB bandwidth spanning from 25.5 to 27 GHz. At 26 GHz, the amplifier achieves a OP1dB of 21 dBm, a Psat of 23.6 dBm, and a peak PAE of 3.3%. The third topic investigates proton irradiation effects on the LNA, PA, and GaN HEMTs. At low and moderate doses (200 & 1000 krad), radiation-enhanced annealing and hydrogen passivation reduces traps, enhancing transconductance and improving RF performance. At higher doses (1500 krad), radiation damage causes Vth shifts, charge trapping, and mobility degradation. DC results further show that in 2 × 50 devices, positive charge effects dominate, lowering Vth and increasing Gm, while in 4 × 50 devices, initial improvements at 200 krad give way to defect-induced mobility degradation at higher doses. These results demonstrate the radiation robustness of GaN RF devices and the need for dose-aware design in space and aerospace systems.