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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/97162完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 白奇峰 | zh_TW |
| dc.contributor.advisor | Chi-Feng Pai | en |
| dc.contributor.author | 黃文翰 | zh_TW |
| dc.contributor.author | Wen-Han Huang | en |
| dc.date.accessioned | 2025-02-27T16:28:43Z | - |
| dc.date.available | 2025-02-28 | - |
| dc.date.copyright | 2025-02-27 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2025-01-15 | - |
| dc.identifier.citation | [1] P. Sandgren and I. Snowball, "Application of Mineral Magnetic Techniques to Paleolimnology," in Tracking Environmental Change Using Lake Sediments: Physical and Geochemical Methods, W. M. Last and J. P. Smol Eds. Dordrecht: Springer Netherlands, 2001, pp. 217-237.
[2] A. Renuka Balakrishna and R. D. James, "A tool to predict coercivity in magnetic materials," Acta Materialia, vol. 208, p. 116697, 2021/04/15/ 2021, doi: https://doi.org/10.1016/j.actamat.2021.116697. [3] M. Julliere, "Tunneling between ferromagnetic films," Physics Letters A, vol. 54, no. 3, pp. 225-226, 1975/09/08/ 1975, doi: https://doi.org/10.1016/0375-9601(75)90174-7. [4] S. Ikeda et al., "Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature," Applied Physics Letters, vol. 93, no. 8, 2008, doi: 10.1063/1.2976435. [5] P. Carcia, A. Meinhaldt, and A. Suna, "Perpendicular magnetic anisotropy in Pd/Co thin film layered structures," Applied Physics Letters, vol. 47, no. 2, pp. 178-180, 1985. [6] S. Ikeda et al., "A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction," Nature Materials, vol. 9, no. 9, pp. 721-724, 2010/09/01 2010, doi: 10.1038/nmat2804. [7] M. N. Baibich et al., "Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices," Phys Rev Lett, vol. 61, no. 21, pp. 2472-2475, Nov 21 1988, doi: 10.1103/PhysRevLett.61.2472. [8] N. F. Mott, "The resistance and thermoelectric properties of the transition metals," Proceedings of the Royal Society of London. Series A - Mathematical and Physical Sciences, vol. 156, no. 888, pp. 368-382, 1936, doi: doi:10.1098/rspa.1936.0154. [9] N. F. Mott, "Electrons in transition metals," Advances in Physics, vol. 13, no. 51, pp. 325-422, 1964. [10] S. S. P. Parkin, R. Bhadra, and K. P. Roche, "Oscillatory magnetic exchange coupling through thin copper layers," Physical Review Letters, vol. 66, no. 16, pp. 2152-2155, 04/22/ 1991, doi: 10.1103/PhysRevLett.66.2152. [11] R. Nakatani, T. Dei, and Y. Sugita, "Oscillation of magnetoresistance in [Ni–Fe/Cu]20/Cu/Fe multilayers with thickness of Cu spacer neighboring Fe buffer layer," Journal of Applied Physics, vol. 73, no. 10, pp. 6375-6377, 1993, doi: 10.1063/1.352655. [12] S. Bouat, B. Rodmacq, and P. Auric, "Transmission X-Ray Diffraction and Mössbauer Spectroscopy Study of Annealed Magnetoresistive Ag/Ni8iFei9 Multilayers," MRS Online Proceedings Library, vol. 475, no. 1, pp. 291-296, 1997/12/01 1997, doi: 10.1557/PROC-475-291. [13] S. S. P. Parkin, R. F. C. Farrow, R. F. Marks, A. Cebollada, G. R. Harp, and R. J. Savoy, "Oscillations of interlayer exchange coupling and giant magnetoresistance in (111) oriented permalloy/Au multilayers," Physical Review Letters, vol. 72, no. 23, pp. 3718-3721, 06/06/ 1994, doi: 10.1103/PhysRevLett.72.3718. [14] Y. Yao et al., "Tunneling magnetoresistance materials and devices for neuromorphic computing," Materials Futures, 2023. [15] Y. T. Evgeny, N. M. Oleg, and R. L. Patrick, "Spin-dependent tunnelling in magnetic tunnel junctions," Journal of Physics: Condensed Matter, vol. 15, no. 4, p. R109, 2003/01/20 2003, doi: 10.1088/0953-8984/15/4/201. [16] W. Butler, X.-G. Zhang, T. Schulthess, and J. MacLaren, "Spin-dependent tunneling conductance of Fe| MgO| Fe sandwiches," Physical Review B, vol. 63, no. 5, p. 054416, 2001. [17] J. Mathon and A. Umerski, "Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction," Physical Review B, vol. 63, no. 22, p. 220403, 05/10/ 2001, doi: 10.1103/PhysRevB.63.220403. [18] S. Yuasa, K. Hono, G. Hu, and D. C. Worledge, "Materials for spin-transfer-torque magnetoresistive random-access memory," MRS Bulletin, vol. 43, no. 5, pp. 352-357, 2018/05/01 2018, doi: 10.1557/mrs.2018.93. [19] Y. S. Choi, K. Tsunekawa, Y. Nagamine, and D. Djayaprawira, "Transmission electron microscopy study on the polycrystalline CoFeB∕MgO∕CoFeB based magnetic tunnel junction showing a high tunneling magnetoresistance, predicted in single crystal magnetic tunnel junction," Journal of Applied Physics, vol. 101, no. 1, 2007, doi: 10.1063/1.2407270. [20] S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando, "Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions," Nature Materials, vol. 3, no. 12, pp. 868-871, 2004/12/01 2004, doi: 10.1038/nmat1257. [21] "University and Educational Intelligence," Nature, vol. 21, no. 537, pp. 361-361, 1880/02/01 1880, doi: 10.1038/021361b0. [22] E. H. Hall, "XVIII. On the “Rotational Coefficient” in nickel and cobalt," The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, vol. 12, no. 74, pp. 157-172, 1881. [23] H. Weng, X. Dai, and Z. Fang, "From anomalous hall effect to the quantum anomalous hall effect," arXiv preprint arXiv:1509.05507, 2015. [24] M. I. Dyakonov and V. I. Perel, "Current-induced spin orientation of electrons in semiconductors," Physics Letters A, vol. 35, no. 6, pp. 459-460, 1971/07/12/ 1971, doi: https://doi.org/10.1016/0375-9601(71)90196-4. [25] Y. Kato, R. Myers, A. Gossard, and D. Awschalom, "Coherent spin manipulation without magnetic fields in strained semiconductors," Nature, vol. 427, no. 6969, pp. 50-53, 2004. [26] J. Wunderlich, B. Kaestner, J. Sinova, and T. Jungwirth, "Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor System," Physical Review Letters, vol. 94, no. 4, p. 047204, 02/04/ 2005, doi: 10.1103/PhysRevLett.94.047204. [27] L. H. Thomas, "The Motion of the Spinning Electron," Nature, vol. 117, no. 2945, pp. 514-514, 1926/04/01 1926, doi: 10.1038/117514a0. [28] W. Tang, H. Liu, Z. Li, A. Pan, and Y.-J. Zeng, "Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures," Advanced Science, vol. 8, no. 18, p. 2100847, 2021, doi: https://doi.org/10.1002/advs.202100847. [29] L. Berger, "Emission of spin waves by a magnetic multilayer traversed by a current," Physical Review B, vol. 54, no. 13, pp. 9353-9358, 10/01/ 1996, doi: 10.1103/PhysRevB.54.9353. [30] J. C. Slonczewski, "Current-driven excitation of magnetic multilayers," Journal of Magnetism and Magnetic Materials, vol. 159, no. 1-2, pp. L1-L7, 1996. [31] Y. Huai, F. Albert, P. Nguyen, M. Pakala, and T. Valet, "Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions," Applied Physics Letters, vol. 84, no. 16, pp. 3118-3120, 2004, doi: 10.1063/1.1707228. [32] R. De Rose, T. Zanotti, F. M. Puglisi, F. Crupi, P. Pavan, and M. Lanuzza, "STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing," Solid-State Electronics, vol. 184, p. 108065, 2021/10/01/ 2021, doi: https://doi.org/10.1016/j.sse.2021.108065. [33] J.-H. Park, C. Park, T. Jeong, M. T. Moneck, N. T. Nufer, and J.-G. Zhu, "Co∕Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy," Journal of Applied Physics, vol. 103, no. 7, 2008, doi: 10.1063/1.2838754. [34] L. Liu, O. J. Lee, T. J. Gudmundsen, D. C. Ralph, and R. A. Buhrman, "Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect," Physical Review Letters, vol. 109, no. 9, p. 096602, 08/29/ 2012, doi: 10.1103/PhysRevLett.109.096602. [35] L. Liu, C. F. Pai, Y. Li, H. W. Tseng, D. C. Ralph, and R. A. Buhrman, "Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum," Science, vol. 336, no. 6081, pp. 555-558, 2012, doi: 10.1126/science.1218197. [36] C.-F. Pai, L. Liu, Y. Li, H. W. Tseng, D. C. Ralph, and R. A. Buhrman, "Spin transfer torque devices utilizing the giant spin Hall effect of tungsten," Applied Physics Letters, vol. 101, no. 12, p. 122404, 2012, doi: 10.1063/1.4753947. [37] D. Zhu and W. Zhao, "Threshold Current Density for Perpendicular Magnetization Switching Through Spin-Orbit Torque," Physical Review Applied, vol. 13, no. 4, p. 044078, 04/30/ 2020, doi: 10.1103/PhysRevApplied.13.044078. [38] S. Yuasa et al., "Magnetic tunnel junctions with single-crystal electrodes: A crystal anisotropy of tunnel magneto-resistance," Europhysics Letters, vol. 52, no. 3, p. 344, 2000/11/01 2000, doi: 10.1209/epl/i2000-00445-5. [39] J. G. Simmons, "Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating Film," Journal of Applied Physics, vol. 34, no. 9, pp. 2581-2590, 1963, doi: 10.1063/1.1729774. [40] L. Cuchet, B. Rodmacq, S. Auffret, R. C. Sousa, and B. Dieny, "Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy," Applied Physics Letters, vol. 105, no. 5, 2014, doi: 10.1063/1.4892450. [41] W. X. Wang, Y. Yang, H. Naganuma, Y. Ando, R. C. Yu, and X. F. Han, "The perpendicular anisotropy of Co40Fe40B20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction," Applied Physics Letters, vol. 99, no. 1, 2011, doi: 10.1063/1.3605564. [42] M. Zhu et al., "A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer," Applied Physics Letters, vol. 106, no. 21, 2015, doi: 10.1063/1.4921967. [43] M. Zhu, H. Chong, Q. B. Vu, R. Brooks, H. Stamper, and S. Bennett, "Study of CoFeB thickness and composition dependence in a modified CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction," Journal of Applied Physics, vol. 119, no. 7, 2016, doi: 10.1063/1.4942166. [44] L. Zhao et al., "Enhancement of Magnetic and Electric Transport Performance of Perpendicular Spin-Orbit Torque Magnetic Tunnel Junction by Stop-on-MgO Etching Process," IEEE Electron Device Letters, vol. 44, no. 3, pp. 408-411, 2023, doi: 10.1109/LED.2023.3236835. [45] N. Sato et al., "CMOS Compatible Process Integration of SOT-MRAM with Heavy-Metal Bi-Layer Bottom Electrode and 10ns Field-Free SOT Switching with STT Assist," in 2020 IEEE Symposium on VLSI Technology, 16-19 June 2020 2020, pp. 1-2, doi: 10.1109/VLSITechnology18217.2020.9265028. [46] P. N. Hishimone, H. Nagai, and M. Sato, "Methods of fabricating thin films for energy materials and devices," in Lithium-ion Batteries-Thin Film for Energy Materials and Devices: IntechOpen, 2020. [47] Z. Wang, Y. Wu, D. Qi, W. Yu, and H. Zheng, "Progress in the design, nanofabrication, and performance of metalenses," Journal of Optics, vol. 24, no. 3, p. 033001, 2022/02/11 2022, doi: 10.1088/2040-8986/ac44d8. [48] N. Savvides, "Correction masks for large-area ion beam etching and figuring of optics," Journal of Applied Physics, vol. 99, no. 9, 2006, doi: 10.1063/1.2197035. [49] S. Ahmadi et al., "The Role of Physical Techniques on the Preparation of Photoanodes for Dye Sensitized Solar Cells," International Journal of Photoenergy, vol. 2014, no. 1, p. 198734, 2014, doi: https://doi.org/10.1155/2014/198734. [50] S. Yamamoto and I. Matsuda, "Measurement of the Resonant Magneto-Optical Kerr Effect Using a Free Electron Laser," Applied Sciences, vol. 7, no. 7, p. 662, 2017. [Online]. Available: https://www.mdpi.com/2076-3417/7/7/662. [51] S. Åberg, "Development of MOKE spectrometer," Independent thesis Advanced level (professional degree) Student thesis, UPTEC Q, 23011, 2023. [Online]. Available: http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-515222 [52] "IMP EPD – End Point Detector." https://www.hidenanalytical.com/wp-content/uploads/2022/01/IMP-EPD-new-format.pdf (accessed. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/97162 | - |
| dc.description.abstract | 磁阻式隨機存取記憶體是未來潛在的一種記憶體技術，其優勢在於非揮發性。磁穿隧結是磁阻式隨機存取記憶體的基本單元。在磁穿隧結的所有機制中，自旋軌道耦合型-磁穿隧結和磁穿隧阻比型-磁穿隧結是製造最有效率磁穿隧結的兩個關鍵元素。自旋軌道耦合型-磁穿隧結提供了一種低能耗的寫入方式，使用鎢作為自旋電子來源層。另一方面，磁穿隧阻比型-磁穿隧結理論發現鈷鐵硼/氧化鎂/鈷鐵硼系列能夠提供最高的磁阻比，使得不同狀態可以輕易被區分。基於這兩個關鍵元素，我們堆疊了 鉭/鎢/鈷鐵硼/氧化鎂/鈷鐵硼/鎢/鉭 的薄膜結構，並調整到最佳參數。為了在低功耗和高耐久性之間取得平衡，合理的矯頑場對於磁穿隧結的兩個磁性層（自由層和固定層）至關重要。在這篇論文中，我們展示了擁有垂直異向性和水平異向性的磁穿隧結膜厚調整，以及基於這些調整的矯頑場變化。此外，我們還展示了磁穿隧結的製造過程。未來，這些裝置不僅可以作為記憶體使用，還有可能用於模擬人工智能領域中生物神經元和突觸的行為。 | zh_TW |
| dc.description.abstract | Magnetoresistive Random Access Memory (MRAM) is a potential memory in the future, with its advantage on non-volatility. Magnetic tunnel junctions (MTJs) are the basic unit in MRAM. Among all mechanisms of MTJs, spin-orbit-torque MTJ (SOT-MTJ) and tunneling magnetoresistance (TMR) - based MTJ are two key elements in producing effective MTJs. SOT-MTJ provides a low-energy-consuming way to write in MTJs, using tungsten as its spin source layer. On the other hand, TMR-based MTJ suggests that CoFeB/MgO/CoFeB series provide the highest TMR ratio, where different states can easily be distinguished. Based on the two key elements, we deposit a stack of Ta/W/CoFeB/MgO/CoFeB/W/Ta thin film and modulate it to the best parameters. In order to strike the balance between low power consumption and high endurance, it is crucial to acquire a reasonable coercivity field (Hc) for the two magnetic layers, free layer and fix layer, in MTJs. In this thesis, we demonstrated the thickness modulations of PMA and IMA MTJs, and the Hc change based on these modulations. Also, we demonstrated the process of MTJ fabrication. In the future, these devices can not only be memories, but potentially also be used in simulating behaviors of biological neurons and synapses in artificial intelligence field. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2025-02-27T16:28:43Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2025-02-27T16:28:43Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vii LIST OF TABLES xii Chapter 1 Introduction 1 1.1 Magnetization 1 1.1.1 Ferromagnetic (FM) Materials 1 1.1.2 In-plane Magnetic Anisotropy (IMA) and Perpendicular Magnetic Anisotropy (PMA) 2 1.2 Magnetoresistance (MR) 4 1.2.1 Giant Magnetoresistance (GMR) 4 1.2.2 Tunneling Magnetoresistance (TMR) 5 1.3 Hall Effect 7 1.3.1 Anomalous Hall Effect (AHE) 7 1.3.2 Spin Hall Effect (SHE) 8 1.4 Magnetic Tunnel Junctions (MTJ) 8 1.4.1 Spin-Transfer Torque (STT) MTJ 8 1.4.2 Spin-Orbit Torque (SOT) MTJ 10 1.4.3 Resistance Area (RA) product 11 1.5 Motivation 12 Chapter 2 Sample Preparation 14 2.1 Thin Film Deposition 14 2.1.1 Magnetron Sputtering and Annealing 14 2.2 Post Process for Device Manufacture 15 2.2.1 Photolithography 15 2.2.2 Ion Beam Etching (IBE) 15 2.2.3 Electron Beam Evaporator (EBE) 17 2.3 Device Fabrication 17 2.3.1 MTJ Fabrication 17 Chapter 3 Measurement 22 3.1 Thin Film Measurement 22 3.1.1 Magneto-Optical Effect (MOKE) 22 3.2 Secondary Ion Mass Spectrometry (SIMS) 23 3.3 MTJ Measurement 25 3.3.1 TMR Measurement 25 Chapter 4 Results and Discussion 26 4.1 PMA Thin Film 26 4.1.1 Half MTJ Structure 26 4.1.2 Full MTJ Structure 27 4.1.3 Short Conclusion 29 4.2 IMA Thin Film Annealed without External Field 30 4.2.1 Half MTJ Structure 30 4.2.2 Full MTJ Structure 33 4.2.3 Short Conclusion 38 4.3 IMA Thin Film Annealed with External Field 38 4.3.1 Half MTJ Structure 38 4.3.2 Full MTJ Structure 40 4.3.3 Short Conclusion 41 4.4 Failure Analysis for MTJ Devices 42 4.4.1 Case 1 of Stop-on-W 42 4.4.2 Case 2 of Stop-on-W 51 4.4.3 Case 3 Stop-on-MgO 53 4.4.4 Short Conclusion 58 Chapter 5 Summary 60 REFERENCE 62 | - |
| dc.language.iso | en | - |
| dc.subject | 磁阻比 | zh_TW |
| dc.subject | 鈷鐵硼/氧化鎂/鈷鐵硼系列 | zh_TW |
| dc.subject | 自旋軌道耦合 | zh_TW |
| dc.subject | 磁穿隧結 | zh_TW |
| dc.subject | 磁阻式隨機存取記憶體 | zh_TW |
| dc.subject | CoFeB/MgO/CoFeB series | en |
| dc.subject | Magnetoresistive Random Access Memory (MRAM) | en |
| dc.subject | Magnetic tunnel junction (MTJ) MTJ | en |
| dc.subject | Spin-orbit-torque (SOT) | en |
| dc.subject | Tunneling magnetoresistance (TMR) | en |
| dc.title | 磁性穿隧元件之薄膜調整與電性研究 | zh_TW |
| dc.title | Modulation of Thin Film and Research of Electrical Property for Magnetic Tunnel Junction | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-1 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 魏拯華;薛文証 | zh_TW |
| dc.contributor.oralexamcommittee | Jeng-Hua Wei;Wen-Jeng Hsueh | en |
| dc.subject.keyword | 磁阻式隨機存取記憶體,磁穿隧結,自旋軌道耦合,磁阻比,鈷鐵硼/氧化鎂/鈷鐵硼系列, | zh_TW |
| dc.subject.keyword | Magnetoresistive Random Access Memory (MRAM),Magnetic tunnel junction (MTJ) MTJ,Spin-orbit-torque (SOT),Tunneling magnetoresistance (TMR),CoFeB/MgO/CoFeB series, | en |
| dc.relation.page | 68 | - |
| dc.identifier.doi | 10.6342/NTU202404513 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2025-01-16 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 材料科學與工程學系 | - |
| dc.date.embargo-lift | 2025-02-28 | - |
| 顯示於系所單位： | 材料科學與工程學系 | |
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