請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/95570完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 蔡豐羽 | zh_TW |
| dc.contributor.advisor | Feng-Yu Tsai | en |
| dc.contributor.author | 方元雋 | zh_TW |
| dc.contributor.author | Yuan-Jyun Fang | en |
| dc.date.accessioned | 2024-09-11T16:34:30Z | - |
| dc.date.available | 2024-09-12 | - |
| dc.date.copyright | 2024-09-11 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2024-08-07 | - |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/95570 | - |
| dc.description.abstract | 半透明鈣鈦礦太陽能電池（STPSCs）因其高效率和製造便利性，具有許多潛在應用，包括串聯太陽能電池、綠色建築和農業。本研究旨在通過三管齊下的方法提高STPSCs的效率和穩定性: (1) 使用銀納米線（Ag NWs）和石墨烯納米片（GNS）組成的奈米複合材料，開發穩定、高導電性、透明且可溶液加工的電極; (2) 採用鈍化方法，通過用2-噻吩乙胺氯化物（TEACl）處理鈣鈦礦層的表面，以提高STPSC半元件的穩定性，使其能夠耐受GNS/Ag NWs頂部電極的溶液處理而不發生降解; (3) 開發低溫（80°C）原子層沉積（ALD）SnOx薄膜，作為STPSC元件的輔助電子傳輸層（ETL）和保護層。在GNS含量為0.001 wt%的條件下，GNS/Ag NWs電極達到10 Ω/sq的片電阻（Rs）、66%的平均可見光透過率（AVT），並於高溫高濕環境下具有長期穩定性，這歸功於於GNS既作為連接介質，又作為單個Ag NWs周圍的保護屏障。TEACl鈍化處理和ALD SnOx輔助ETL均提高了PSC元件的功率轉換效率（PCE）和穩定性，使STPSC半元件於大氣環境下噴塗GNS/Ag NWs透明電極而不發生降解。最終獲得的STPSC元件達到高達13.63%的PCE，與使用熱蒸發Ag頂部電極的非透明元件相當。 | zh_TW |
| dc.description.abstract | Semitransparent perovskite solar cells (STPSCs) offer many potential applications, including tandem solar cells, green buildings, and agriculture, owing to their high efficiency and ease of manufacturing. This study aims to enhance the efficiency and stability of STPSCs through a three-pronged approach: (1) developing stable, highly conductive, transparent, and solution-processed electrodes for STPSCs using a nanocomposite of Ag nanowires (Ag NWs) and graphene nano-sheets (GNS); (2) adopting a passivation method involving treating the surface of the perovskite layer with 2-thiopheneethylammonium chloride (TEACl) to enhance the stability of half STPSC devices so that they can withstand the solution processing of the GNS/Ag NWs top electrode without degradation; (3) developing low-temperature (80C) atomic layer deposition (ALD) SnOx thin films to function as both an auxiliary electron-transporting layer (ETL) and a protection layer for STPSC devices. With a GNS content of 0.001 wt%, GNS/Ag NWs electrodes achieved a sheet resistance (Rs) of 10 Ω/sq, average visible transmittance (AVT) of 66%, and long-term stability in damp heat, thanks to the GNS serving both as a connecting medium and protecting shields around individual Ag NWs. Both the TEACl passivation and the ALD SnOx auxiliary ETL improved the power conversion efficiency (PCE) and the stability of PSC devices, while allowing STPSC half- devices to be spray-coated with the GNS/Ag NWs transparent electrodes in the ambient air without degradation. The resultant STPSC devices achieved a PCE of up to 13.63%, on par with that of opaque devices with a thermally-evaporated Ag top electrode. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2024-09-11T16:34:30Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2024-09-11T16:34:30Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員審定書 i
Acknowledgments ii 摘要 iii Abstract iv Contents vi List of Figures ix List of Tables xiv Chapter 1 Introduction 1 1.1 Perovskite Solar Cells (PSCs) 1 1.2 Semitransparent perovskite solar cells (STPSCs) 7 1.3 Atomic layer deposition (ALD) for PSCs and STPSCs 12 1.4 Transparent electrodes with Ag NWs and GNS/Ag NWs 20 1.4.1 Transparent electrodes with Ag NWs 20 1.5 Objectives Statement and Approaches 25 Chapter 2 Experimental Sections 26 2.1 Materials 26 2.2 Instruments 28 2.3 Dispersibility Test of GNS 29 2.4 Fabrication of STPSCs 33 2.4.1 Cleaning of tin-doped indium oxide (ITO) substrate: 33 2.4.2 Preparation of Cu:NiOx solution: 33 2.4.3 Spin-coating of Cu:NiOx as a HTL layer: 33 2.4.4 Preparation of P3HTCOOH solution: 34 2.4.5 Spin-coating of P3HTCOOH as an HTL passivation layer: 34 2.4.6 Preparation of perovskite precursor: 34 2.4.7 Spin-coating of perovskite layer: 34 2.4.8 Preparation of TEACl solution 35 2.4.9 Spin-coating of TEACl as a perovskite passivation layer 35 2.4.10 Preparation of PCBM solution 35 2.4.11 Spin-coating of PCBM as an ETL 35 2.4.12 Preparation of PEI solution 36 2.4.13 Spin-coating of PEI as a modification layer 36 2.4.14 Deposition of ALD SnOx film 36 2.4.15 Spray-coating of GNS/Ag NWs solution as a transparent electrode 36 2.5 Characterization 39 Chapter 3 Results and Discussion 40 3.1 Effects of GNS addition on the properties of Ag NWs films 40 3.2 Characteristics of PSC Devices with an ALD SnOx auxiliary ETL 46 3.2.1 PV characteristics and stability 46 3.2.2 Improving device stability with TEACl passivation 50 3.2.3 Mechanisms underlying the effects of TEACl passivation 53 3.3 PV characteristics of STPSC devices 60 Chapter 4 Conclusion 62 Reference 64 | - |
| dc.language.iso | en | - |
| dc.subject | 石墨烯 | zh_TW |
| dc.subject | 半透明鈣鈦礦太陽能電池 | zh_TW |
| dc.subject | 透明電極 | zh_TW |
| dc.subject | 原子層沉積 | zh_TW |
| dc.subject | 氧化物半導體 | zh_TW |
| dc.subject | 銀奈米線 | zh_TW |
| dc.subject | graphene | en |
| dc.subject | transparent electrode | en |
| dc.subject | Semitransparent perovskite solar cells | en |
| dc.subject | atomic layer deposition | en |
| dc.subject | oxide semiconductors | en |
| dc.subject | silver nanowires | en |
| dc.title | 透過原子層沉積和銀奈米線電極實現穩定高效的半透明鈣鈦礦太陽能電池 | zh_TW |
| dc.title | Stable and Efficient Semitransparent Perovskite Solar Cells Enabled by Atomic Layer Deposition and Ag Nanowires-Based Electrodes | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 112-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 李坤穆;黃裕清;闕居振 | zh_TW |
| dc.contributor.oralexamcommittee | Kun-Mu Lee;Yu-Ching Huang;Chu-Chen Chueh | en |
| dc.subject.keyword | 半透明鈣鈦礦太陽能電池,原子層沉積,氧化物半導體,銀奈米線,石墨烯,透明電極, | zh_TW |
| dc.subject.keyword | Semitransparent perovskite solar cells,atomic layer deposition,oxide semiconductors,silver nanowires,graphene,transparent electrode, | en |
| dc.relation.page | 73 | - |
| dc.identifier.doi | 10.6342/NTU202403554 | - |
| dc.rights.note | 未授權 | - |
| dc.date.accepted | 2024-08-10 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 材料科學與工程學系 | - |
| 顯示於系所單位： | 材料科學與工程學系 | |
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