二硒化錫與石墨烯二維異質結構中的憶阻轉換現象

Abstract

由於影像辨識、語音辨識在電子裝置中的快速發展，大規模數據處理的需求也隨之提升。為了提高運算的速度且降低所需的能量，人們開始研究新穎的材料與技術。其中以二維材料製作的憶阻器因其高寫入速度、低功耗、結構簡單、體積極小等優點備受人們研究。

在我們的研究中，我們將二硒化錫以低溫合成於石墨烯表面，形成垂直的二維異質結構。根據此結構量測到電阻開關行為，表示在此二維異質結構中有資料存儲的現象。元件經過重複量測仍維持穩定的開關大小，展現出以化學氣相沉積系統生長出的二維異質結構應用於電阻式記憶體的潛力。

Due to the rapid development of image recognition and voice recognition in electronic devices, the demand for large-scale data processing has increased significantly. To enhance computing speed while reducing power consumption, researchers are investigating novel materials and technologies. Recently, two-dimensional (2D) memristors have garnered considerable attention due to their high write speeds, low power consumption, simple structure, and extremely small size. In our research, SnSe₂ is synthesized at low temperature on the surface of graphene, forming a vertical 2D heterostructure. This structure exhibited memristive switching behavior, indicating data storage capabilities within 2D heterostructure. Repeated measurements showed consistent on/off ratio, demonstrating the potential of 2D heterostructure memristor grown by chemical vapor deposition for use in resistive random-access memory (RRAM).