從二維氮化鎢到多層二硒化鎢：原子置換研究

Abstract

自2004年石墨烯被發現以來，對二維材料（2D材料）的研究激增，促使了各種材料的發展，如過渡金屬二硫化物（TMDCs）、六方氮化硼（h-BN）和黑磷等。這些材料可以剝離成原子薄片，並且具有獨特的性質。在過去的二十年中，2D材料成為一個充滿活力的研究領域，因其獨特的電子、光學和機械特性，為量子資訊、奈米電子學、和可撓性電路等領域帶來了可預期重大進展的潛力。 我們的研究成功地利用限制的固相-液相-氣相生長方法合成了非凡德瓦二維材料氮化鎢(W5N6)。我們通過引入氬氣反應離子蝕刻(RIE)氧化原始的W5N6成為一種中間材料WOxNy，隨後使用化學氣相沉積(CVD)將其轉換為多層二硒化鎢(AS-WSe2)。拉曼光譜、XPS、TEM和AFM 等表徵技術確認了 AS-WSe2的多層特性，以及其三層組成。我們還研究了氫氣和溫度對原子置換過程的影響。這種穩定的多層 TMDCs 合成方法為開發具有最小接觸電阻的二維場效電晶體及其未來應用開啟了新的可能性。

Since the discovery of graphene in 2004, research on two-dimensional (2D) materials has surged, leading to the development of diverse materials such as transition-metal dichalcogenides (TMDCs), hexagonal boron nitride (h-BN), and black phosphorus. These materials, which can be exfoliated into atomically thin sheets, offer unique properties. Over the past two decades, 2D materials have become a vibrant field of study, promising significant advancements in nanoelectronics, quantum information, and flexible electronics due to their unique electronic, optical, and mechanical properties. Our research successfully synthesized the non-van-der-Waals 2D material W5N6 using a confined VLS growth method. We performed atomic substitution by introducing argon RIE to oxidize pristine W5N6 into an intermediate material, which was then converted into multi-layer WSe2 by CVD. Characterization techniques such as Raman spectroscopy, XPS, TEM, and AFM confirmed the multi-layer nature of AS-WSe2, consisting of three layers. We also investigated the effects of hydrogen and temperature on the atomic substitution process. This stable synthesis method for multi-layer TMDCs opens new possibilities for developing 2D FETs with minimal contact resistance and other future applications.