請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/93098完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 徐冠倫 | zh_TW |
| dc.contributor.advisor | Kuan-Lun Hsu | en |
| dc.contributor.author | 吳東翰 | zh_TW |
| dc.contributor.author | Tung-Han Wu | en |
| dc.date.accessioned | 2024-07-17T16:24:26Z | - |
| dc.date.available | 2024-07-18 | - |
| dc.date.copyright | 2024-07-17 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2024-07-09 | - |
| dc.identifier.citation | [1] G. E. Moore, "Cramming more components onto integrated circuits," Proceedings of the IEEE, vol. 86, no. 1, pp. 82-85, 1998.
[2] “Moore’s Law – Now and in the Future,” Intel. https://www.intel.com/content/www/us/en/newsroom/opinion/moore-law-now-and-in-the-future.html#gs.8mu7ir (accessed Apr. 29, 2024). [3] J. H. Lau, “Evolution, challenge, and outlook of TSV, 3D IC integration and 3d silicon integration,” International Symposium on Advanced Packaging Materials, pp. 462-488, Dec. 2011. [4] A. Chaudhry and M. J. Kumar, “Controlling Short-Channel Effects in Deep-Submicron SOI MOSFETs for Improved Reliability: A Review,” IEEE Transactions on Device and Materials Reliability, vol. 4, no. 1, pp. 99–109, Mar. 2004. [5] J. Van Olmen et al., “Integration challenges of copper Through Silicon Via (TSV) metallization for 3D-stacked IC integration,” Microelectronic engineering, vol. 88, no. 5, pp. 745–748, May 2011. [6] S. Achra et al., “Characterization of interface interactions between Graphene and Ruthenium,” 2020 IEEE International Interconnect Technology Conference (IITC), Oct. 2020. [7] “Multi-walled Carbon Nanotubes Production, Properties & Applications,” tuball.com. https://tuball.com/de/articles/multi-walled-carbon-nanotubes (accessed Apr. 29, 2024). [8] H. Li, W. Liu, A. M. Cassell, Franz Kreupl, and K. Banerjee, “Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part II: Characterization,” I.E.E.E. Transactions on Electron Devices/IEEE Transactions on Electron Devices, vol. 60, no. 9, pp. 2870–2876, Sep. 2013. [9] K. Shirasu et al., “Negative axial thermal expansion coefficient of carbon nanotubes: Experimental determination based on measurements of coefficient of thermal expansion for aligned carbon nanotube reinforced epoxy composites,” Carbon, vol. 95, pp. 904–909, Dec. 2015. [10] X. Xu et al., “Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply,” Nature Nanotechnology, vol. 11, no. 11, pp. 930–935, Aug. 2016. [11] T. V. Patil, D. K. Patel, S. D. Dutta, K. Ganguly, A. Randhawa, and K.-T. Lim, “Carbon Nanotubes-Based Hydrogels for Bacterial Eradiation and Wound-Healing Applications,” Applied Sciences, vol. 11, no. 20, p. 9550, Jan. 2021. [12] B. Safieldeen, H. Mostafa, H. Abdelhamid, and Y. Ismail, “A comparative evaluation of single-walled carbon nanotubes and copper in interconnects and Through-Silicon Vias,” 2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS), Cairo, pp. 519-522, Dec. 2015. [13] W. Steinhögl, G. Schindler, G. Steinlesberger, M. Traving, and M. Engelhardt, “Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller,” Journal of Applied Physics, vol. 97, no. 2, p. 023706, Jan. 2005. [14] “Investigating 3D IC Underfill Process Through Moldex3D Encapsulation - Moldex3D Blog,” Moldex3D | Plastic Injection Molding Simulation Software. https://www.moldex3d.com/blog/top-story/investigating-3d-ic-underfill-process-through-moldex3d-encapsulation/ (accessed Apr. 29, 2024). [15] M. A. Ahmed and Malgorzata Chrzanowska-Jeske, “Delay and power optimization with TSV-aware 3D floorplanning,” Fifteenth International Symposium on Quality Electronic Design, Mar. 2014. [16] S. Chen, Z. Wang, Y. En, Y. Huang, F. Qin, and T. An, “The experimental analysis and the mechanical model for the debonding failure of TSV-Cu/Si interface,” Microelectronics reliability/Microelectronics and reliability, vol. 91, pp. 52–66, Dec. 2018. [17] Y. Chung et al., “Coupled self-assembled monolayer for enhancement of Cu diffusion barrier and adhesion properties,” RSC advances, vol. 4, no. 104, pp. 60123–60130, Nov. 2014. [18] C.-U. Kim, J. Park, N. Michael, P. Gillespie, and D. Augur, “Study of electron-scattering mechanism in nanoscale Cu interconnects,” Journal of electronic materials, vol. 32, no. 10, pp. 982–987, Oct. 2003. [19] K. H. Koo, “The Comparison Study of Future On-chip Interconnects for High Performance VLSI Applications,” Stanford University, 2011. [20] S. Achra et al., “Characterization of interface interactions between Graphene and Ruthenium,” 2020 IEEE International Interconnect Technology Conference (IITC), Oct. 2020. [21] G. Hills et al., “Modern microprocessor built from complementary carbon nanotube transistors,” Nature, vol. 572, no. 7771, pp. 595–602, Aug. 2019. [22] K. A. Shah and B. A. Tali, “Synthesis of carbon nanotubes by catalytic chemical vapour deposition: A review on carbon sources, catalysts and substrates,” Materials Science in Semiconductor Processing, vol. 41, pp. 67–82, Jan. 2016. [23] J. Chrzanowska et al., “Synthesis of carbon nanotubes by the laser ablation method: Effect of laser wavelength,” physica status solidi (b), vol. 252, no. 8, pp. 1860–1867, Mar. 2015. [24] N. Arora and N. N. Sharma, “Arc discharge synthesis of carbon nanotubes: Comprehensive review,” Diamond and Related Materials, vol. 50, pp. 135–150, Nov. 2014. [25] J. Prasek et al., “Methods for carbon nanotubes synthesis—review,” Journal of Materials Chemistry, vol. 21, no. 40, p. 15872, 2011. [26] A. Dongelmans, “Superconductivity in WS2 and preperation of BSCCO,” B.S. Thesis, Department of Applied Physics, University of Groningen, 2017. [27] X.-D. Wang, K. Vinodgopal, and G.-P. Dai, “Synthesis of Carbon Nanotubes by Catalytic Chemical Vapor Deposition,” Perspective of Carbon Nanotubes, Oct. 2019. [28] F. Ding et al., “The Importance of Strong Carbon−Metal Adhesion for Catalytic Nucleation of Single-Walled Carbon Nanotubes,” Nano Letters, vol. 8, no. 2, pp. 463–468, Feb. 2008. [29] V. Jourdain and C. Bichara, “Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition,” Carbon, vol. 58, pp. 2–39, Jul. 2013. [30] S. Chakrabarti, H. Kume, L. Pan, Takeshi Nagasaka, and Y. Nakayama, “Number of Walls Controlled Synthesis of Millimeter-Long Vertically Aligned Brushlike Carbon Nanotubes,” Journal of physical chemistry C, vol. 111, no. 5, pp. 1929–1934, Jan. 2007. [31] D. Jiang, T. Wang, L.-L. Ye, K. Jeppson, and J. Liu, “Carbon Nanotubes in Electronics Interconnect Applications with a Focus on 3D-TSV Technology,” ECS Transactions, vol. 44, no. 1, pp. 683–692, Mar. 2012. [32] X. Zang, Q. Zhou, J. Chang, Y. Liu, and L. Lin, “Graphene and carbon nanotube (CNT) in MEMS/NEMS applications,” Microelectronic Engineering, vol. 132, pp. 192–206, Jan. 2015. [33] Y. Zhang et al., “Electric-field-directed growth of aligned single-walled carbon nanotubes,” Applied Physics Letters, vol. 79, no. 19, pp. 3155–3157, Nov. 2001. [34] Z. Jin, H. Chu, J. Wang, J. Hong, W. Tan, and Y. Li, “Ultralow Feeding Gas Flow Guiding Growth of Large-Scale Horizontally Aligned Single-Walled Carbon Nanotube Arrays,” Nano Letters, vol. 7, no. 7, pp. 2073–2079, Jun. 2007. [35] L. Huang et al., “Cobalt Ultrathin Film Catalyzed Ethanol Chemical Vapor Deposition of Single-Walled Carbon Nanotubes,” The Journal of Physical Chemistry B, vol. 110, no. 23, pp. 11103–11109, May 2006. [36] C. Kocabas, S.-H. Hur, A. Gaur, Matthew A. Meitl, M. Shim, and John A. Rogers, “Guided Growth of Large-Scale, Horizontally Aligned Arrays of Single-Walled Carbon Nanotubes and Their Use in Thin-Film Transistors,” Small, vol. 1, no. 11, pp. 1110–1116, Nov. 2005. [37] S. H. Kang et al., “High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes,” Nature Nanotechnology, vol. 2, no. 4, pp. 230–236, Apr. 2007. [38] N. Patil et al., “Wafer-Scale Growth and Transfer of Aligned Single-Walled Carbon Nanotubes,” IEEE Transactions on Nanotechnology, vol. 8, no. 4, pp. 498–504, Jul. 2009. [39] R. Zhang, Y. Zhang, and F. Wei, “Horizontally aligned carbon nanotube arrays: growth mechanism, controlled synthesis, characterization, properties and applications,” Chemical Society Reviews, vol. 46, no. 12, pp. 3661–3715, 2017. [40] J. Wang and T. Lei, “Separation of Semiconducting Carbon Nanotubes Using Conjugated Polymer Wrapping,” Polymers, vol. 12, no. 7, p. 1548, Jul. 2020. [41] J. Lu, J. Miao, T. Xu, B. Yan, T. Yu, and Z. Shen, “Growth of horizontally aligned dense carbon nanotubes from trench sidewalls,” Nanotechnology, vol. 22, no. 26, p. 265614, May 2011. [42] A. H. Monica, M. Paranjape, G. L. Coles, S. J. Papadakis, and R. Osiander, “Toward a lateral carbon nanotube based field emission triode,” Journal of vacuum science & technology. B, Microelectronics and nanometer structures, vol. 26, no. 2, pp. 838–841, Mar. 2008. [43] Y. Hayamizu et al., “Integrated three-dimensional microelectromechanical devices from processable carbon nanotube wafers,” Nature Nanotechnology, vol. 3, no. 5, pp. 289–294, May 2008. [44] D. Wang, P. Song, C. Liu, W. Wu, and S. Fan, “Highly oriented carbon nanotube papers made of aligned carbon nanotubes,” Nanotechnology, vol. 19, no. 7, p. 075609, Jan. 2008. [45] S. Tawfick, K. O’Brien, and A. J. Hart, “Flexible High-Conductivity Carbon-Nanotube Interconnects Made by Rolling and Printing,” Small, vol. 5, no. 21, pp. 2467–2473, Nov. 2009. [46] H. Li, W. Liu, A. M. Cassell, Franz Kreupl, and K. Banerjee, “Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part I: Process Development,” IEEE Transactions on Electron Devices, vol. 60, no. 9, pp. 2862–2869, Sep. 2013. [47] C. Silvestri et al., “Horizontally aligned carbon nanotube scaffolds for freestanding structures with enhanced conductivity,” 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS), Jan. 2017. [48] R. M. Henderson and K. B. Clark, “Architectural Innovation: The Reconfiguration of Existing Product Technologies and the Failure of Established Firms,” Administrative Science Quarterly, vol. 35, no. 1, pp. 9–30, Mar. 1990. [49] Tahir Iqbal Awan, Almas Bashir, and Aqsa Tehseen, Chemistry of nanomaterials : fundamentals and applications. Amsterdam, Netherlands Elsevier, 2020. [50] Ju Hyun Ahn et al., “Development of a fully automated desktop chemical vapor deposition system for programmable and controlled carbon nanotube growth,” Micro and nano systems letters, vol. 7, no. 1, Aug. 2019. [51] “Inductively Coupled Plasma RIE Etching (ICP),” Oxford Instruments. https://plasma.oxinst.com/technology/icp-etching (accessed Apr. 29, 2024). [52] “Plasma Enhanced Chemical Vapor Deposition Systems,” www.mks.com. https://www.mks.com/n/pecvd-systems (accessed Apr. 29, 2024). [53] M. A. Sutton, N. Li, D. C. Joy, A. P. Reynolds, and X. Li, “Scanning Electron Microscopy for Quantitative Small and Large Deformation Measurements Part I: SEM Imaging at Magnifications from 200 to 10,000,” Experimental Mechanics, vol. 47, no. 6, pp. 775–787, Mar. 2007. [54] “I-V Characteristic Curves,” ElectronicsTutorials. https://www.electronics-tutorials.ws/blog/i-v-characteristic-curves.html?replytocom=2211 (accessed Apr. 29, 2024). [55] O. Y. Palyvoda, “Raman spectroscopy and related techniques in Biomedicine,” Journal of Biosensors & Bioelectronics, vol. 01, no. S1, 2012. [56] M. Xu, D. N. Futaba, M. Yumura, and K. Hata, “Alignment Control of Carbon Nanotube Forest from Random to Nearly Perfectly Aligned by Utilizing the Crowding Effect,” ACS Nano, vol. 6, no. 7, pp. 5837–5844, Jun. 2012. [57] M. Chhowalla et al., “Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition,” Journal of applied physics, vol. 90, no. 10, pp. 5308–5317, Oct. 2001. [58] F. Yan, C. Zhang, D. Cott, G. Zhong, and J. Robertson, “High-density growth of horizontally aligned carbon nanotubes for interconnects,” Physica Status Solidi (b), vol. 247, no. 11–12, pp. 2669–2672, Sep. 2010. [59] J. Lu and J. Miao, “Horizontally suspended carbon nanotube bundles patterned on silicon trench sidewalls,” International Journal of Nanotechnology, vol. 11, no. 1/2/3/4, p. 222, 2014. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/93098 | - |
| dc.description.abstract | 隨著半導體元件尺寸不斷微縮並逐漸接近物理瓶頸，先進封裝技術成為延續莫爾定律關鍵之一，其中的2.5D以及3D立體封裝技術即透過矽中介層(Silicon interposer)、導線重佈層(Redistribution Layer, RDL)、矽穿孔(Through Silicon Via, TSV)等結構達成晶片間的互聯(Interconnect)。目前於互聯技術中，銅金屬被作為主要的導線材料，但隨著製程技術的發展，電子元件的物理尺寸也不斷縮小。此時，在高電流密度的條件下，理想中的導線材料須滿足高抗電遷移能力、低電阻以及良好的散熱特性，而奈米碳管(carbon nanotube, CNT)同時具備了超越傳統金屬的電性、散熱特性與機械強度之潛力，因而被視為下一代革命性之新型互聯材料。本論文提出使用水平排列奈米碳管取代封裝結構中的傳統金屬導線之概念，透過創新製程以及最佳化參數製備高品質水平排列奈米碳管，並示範碳基互聯之概念實作。以圖案化鐵薄膜及氧化鋁作為催化層，並透過熱化學氣相沉積法生長垂直排列奈米碳管，使用液體輔助展平法以及多種改良製程將垂直排列奈米碳管展平至水平排列奈米碳管，透過氧電漿蝕刻以圖案化水平奈米碳管導線，並於兩端蒸鍍製備金屬電極來完成碳基互聯測試結構。於奈米碳管製備階段透過掃描式電子顯微鏡、拉曼光譜分析儀器以及三倍頻熱傳導值系統量測並分析奈米碳管生長品質以及熱傳導值表現，最後藉由兩點探針系統對水平排列奈米碳管互聯結構進行電性量測，驗證並評估使用奈米碳管取代封裝結構中傳統金屬互聯的可行性。 | zh_TW |
| dc.description.abstract | Carbon nanotubes (CNTs) have emerged as a promising next-generation interconnect material due to their outstanding electrical properties, thermal conductivity, and mechanical strength surpassing traditional metals. This paper proposes the concept of replacing traditional metal interconnect in packaging structures with horizontally aligned carbon nanotubes (HA-CNTs). Innovative processes are employed to prepare high-quality HA-CNTs, demonstrating the implementation of carbon-based interconnect concepts. Using patterned iron films and alumina as catalytic layers, vertically aligned carbon nanotubes (VA-CNTs) are grown through chemical vapor deposition. Liquid-assisted planarization methods and various improvement processes are utilized to flatten the VA-CNTs into HA-CNTs. Oxygen plasma etching is employed to pattern the HA-CNT interconnect, and metal electrodes are deposited at both ends to complete the carbon-based interconnect test structure. Throughout the stages of fabrication, scanning electron microscopy, Raman spectroscopy analysis, and thermal conductivity measurements are conducted to assess the growth quality and thermal performance of the CNTs. Finally, electrical measurements using a two-point probe system are performed on the HA-CNTs interconnect structure to validate the feasibility of using nanotubes as a replacement for traditional metal interconnects in packaging structures. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2024-07-17T16:24:25Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2024-07-17T16:24:26Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 致謝 i
中文摘要 ii ABSTRACT iii 目次 iv 圖次 vii 表次 xii 第一章 緒論 1 1.1 前言 1 1.2 研究背景與動機 4 1.3 論文架構 5 第二章 文獻回顧與理論基礎 6 2.1 先進封裝與互聯技術 6 2.2 奈米碳管生長機制 9 2.3 水平排列奈米碳管 12 2.4 垂直排列奈米碳管展平化 16 第三章 實驗儀器設備與原理 20 3.1 曝光機 22 3.2 電子束蒸鍍系統 24 3.3 三區石英高溫爐管 25 3.4 感應耦合電漿蝕刻系統 26 3.5 電漿輔助化學氣相沉積系統 27 3.6 掃描式電子顯微鏡 28 3.7 兩點探針I-V電性量測系統 29 3.8 三倍頻熱傳導值量測系統 30 3.9 拉曼光譜分析儀 31 第四章 實驗流程與製程 32 4.1 實驗設計與流程 32 4.2 奈米碳管催化層圖案化製程 33 4.2.1 試片準備與前置處理 33 4.2.2 微影製程(催化層圖案定義) 35 4.2.3 催化層薄膜沉積 41 4.2.4 催化層圖案化 44 4.3 水平排列奈米碳管製程 46 4.3.1 垂直排列奈米碳管生長製程 46 4.3.2 垂直排列奈米碳管展平化製程 52 4.4 水平排列奈米碳管導線結構製程 55 4.4.1 微影製程(導線結構圖案定義) 55 4.4.2導線結構乾蝕刻製程 58 4.5 互聯金屬電極結構製程 60 4.5.1 微影製程(電極結構圖案定義) 60 4.5.2 電極結構薄膜沉積 63 4.5.3 電極結構圖案化 66 第五章 結果與討論 67 5.1 垂直排列奈米碳管生長分析 67 5.1.1 碳源流量對生長之影響 68 5.1.2 退火時間對生長之影響 71 5.1.3 催化層膜厚對生長之影響 73 5.1.4 垂直排列奈米碳管最佳化生長參數 74 5.2 熱傳導值量測 76 5.3 互聯結構與電性量測 80 5.4 展平化製程分析 84 5.5 國際文獻比較 87 第六章 結論與未來展望 87 6.1 結論 88 6.2 未來展望 90 參考文獻 92 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | 奈米碳管 | zh_TW |
| dc.subject | 互聯技術 | zh_TW |
| dc.subject | 金屬導線 | zh_TW |
| dc.subject | 先進封裝 | zh_TW |
| dc.subject | 導線重佈層 | zh_TW |
| dc.subject | 矽中介層 | zh_TW |
| dc.subject | 熱化學氣相沉積 | zh_TW |
| dc.subject | 碳基材料 | zh_TW |
| dc.subject | Nanomaterials | en |
| dc.subject | Carbon-based Materials | en |
| dc.subject | Chemical Vapor Deposition | en |
| dc.subject | Silicon Interposer | en |
| dc.subject | Redistribution Layer | en |
| dc.subject | Advanced Packaging | en |
| dc.subject | Interconnect | en |
| dc.subject | Carbon Nanotubes | en |
| dc.title | 水平排列奈米碳管互聯結構應用於半導體先進封裝技術 | zh_TW |
| dc.title | Horizontally Aligned Carbon Nano-tube (HA-CNT) Interconnect Applied in Advanced Packaging Technology for Semiconductors | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 112-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 廖洺漢;劉建豪;李敏鴻 | zh_TW |
| dc.contributor.oralexamcommittee | Ming-Han Liao;Chien-Hao Liu;Min-Hung Lee | en |
| dc.subject.keyword | 奈米碳管,互聯技術,金屬導線,先進封裝,導線重佈層,矽中介層,熱化學氣相沉積,碳基材料, | zh_TW |
| dc.subject.keyword | Carbon Nanotubes,Interconnect,Advanced Packaging,Redistribution Layer,Silicon Interposer,Chemical Vapor Deposition,Carbon-based Materials,Nanomaterials, | en |
| dc.relation.page | 99 | - |
| dc.identifier.doi | 10.6342/NTU202401584 | - |
| dc.rights.note | 同意授權(全球公開) | - |
| dc.date.accepted | 2024-07-09 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 機械工程學系 | - |
| 顯示於系所單位： | 機械工程學系 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-112-2.pdf | 23.05 MB | Adobe PDF | 檢視/開啟 |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。