透過液態金屬轉印技術製備二維氧化銦之物理性質研究

Abstract

在我們的研究中，我們提出了一個新概念，即在液態金屬中形成氧化層的過程中，氧空缺濃度會隨溫度變化而有異。具體來說，通過改變二維氧化物之壓印溫度，我們成功地調節了氧空缺的濃度。而透過採取一系列材料分析技術，我們提出了一種快速且高效的方法來製備二維氧化銦，同時能夠在宏觀以及微觀層面量測其內部缺陷之含量。在宏觀尺度下，我們透過光致發光能譜(PL)以及X射線光電子能譜(XPS)等分析技術，量測二維氧化銦在不同溫度下之氧空缺濃度變化，我們發現在較高的壓印溫度下氧空缺含量會顯著減少。此外，在微觀尺度下，我們透過在晶界附近採用電子能量損失能譜（EELS）之掃描，進而有效探測晶粒邊界和晶粒內部之間之氧空缺濃度之波動。我們的研究結果顯示，氧空缺在這些晶界處顯著積累。而透過溫度調節來操縱缺陷濃度的能力也為二維憶阻器材料及其在基於二維氧化銦的記憶體元件之開發提供了不同層面的見解及研究價值。

In our study, we introduced a novel concept wherein the concentration of oxygen vacancies undergoes temperature-dependent variations during the formation of an oxide layer in liquid metal. Specifically, by adjusting the imprinting temperature of two-dimensional oxides, we successfully controlled the concentration of oxygen vacancies. Employing a suite of material analysis techniques, we devised a rapid and effective method for fabricating 2D-InOx while concurrently quantifying its internal defect content at both macro and micro scales. On the macroscopic level, we utilized photoluminescence spectroscopy (PL) and X-ray photoelectron spectroscopy (XPS) to assess the variation in oxygen vacancies within 2D-InOx at different temperatures, noting a significant reduction in oxygen vacancies at elevated imprinting temperatures. Moreover, at the microscopic level, electron energy loss spectroscopy (EELS) near grain boundaries allowed for precise detection of oxygen vacancy concentration fluctuations between grain boundaries and the interior of grains, revealing a notable accumulation of oxygen vacancies at these interfaces. This ability to modulate defect concentrations via temperature manipulation offers valuable insights and research prospects for advancing 2D memory materials and their application in 2D-InOx-based memory devices.