鉍磊晶薄膜以機械轉印法轉貼前後的特性比較

Abstract

在本篇論文中，我們使用MS-6800A環氧樹脂把成長於矽基板(n-Si(111))或是二氧化矽/矽(SiO2/Si)基板上20~60奈米的鉍磊晶薄膜(Epitaxial Bismuth thin film)黏合到另一個二氧化矽/矽(SiO2/Si)基板，並利用光學線性移動平台治具把原基板撕離之後，比較其轉貼前鉍薄膜試片以及轉貼後鉍薄膜試片的表面形態(morphology) 與晶格常數c。 經由掃描式電子顯微鏡(SEM)以及原子力顯微鏡(AFM)觀察轉貼前後鉍薄膜的表面，發現成長於二氧化矽/矽(SiO2/Si)基板上的鉍薄膜，其上表面會有明顯的顆粒(grain)，而其轉貼後下表面，會出現凹陷區域，且數目會和上表面的顆粒呈正相關性。然而，成長於矽基板上的鉍薄膜其上表面為連續平面且沒有顆粒，且其下表面也呈現連續的平滑面。藉由高解析XRD之ω-2θ scan來量測成長於二氧化矽或是矽基板上鉍(0003)面並以干涉函數與高斯函數來擬合，可得轉貼前後的晶格參數c，結果顯示轉貼前後鉍薄膜的晶格常數c幾乎不變，可以說明轉貼前後鉍薄膜晶格常數c不會受到基板的影響。最後通過電子背向散射繞射量測，觀測到轉貼前後鉍薄膜的粒徑(grain size)大小一致。

In this paper, we employ MS-6800A epoxy resin to bond epitaxial bismuth thin films grow on silicon substrates (n-Si(111)) or silicon dioxide/silicon (SiO2/Si) substrates with thicknesses ranging from 20 to 60 nanometers to another silicon dioxide/silicon (SiO2/Si) substrate. Utilizing an optical linear motion platform fixture, the original substrate is peeled off, and a comparative analysis is conducted on the surface morphology and lattice constant c of the bismuth thin film samples before and after transfer. Examination of the surface of the bismuth thin films before and after transfer is carried out using scanning electron microscopy (SEM) and atomic force microscopy (AFM). It is observed that bismuth films grow on SiO2/Si substrates exhibit noticeable grain structures on their upper surfaces, and post-transfer, the lower surface display depressed regions, with the number correlating positively with the grains on the upper surface. Conversely, bismuth films grow on silicon substrates present continuous and grain-free upper surfaces, with smooth and continuous lower surfaces post-transfer. High-resolution X-ray diffraction (XRD) ω-2θ scans are employed to measure the lattice parameters c of the bismuth (0003) plane grow on silicon dioxide or silicon substrates. The results indicate that the lattice constant c remain nearly unchanged before and after transfer, suggesting that the bismuth thin film lattice constant c is not influenced by the substrate. Finally, electron backscatter diffraction measurements reveal consistent grain sizes of the bismuth thin films before and after transfer.