多壁奈米碳管矽穿孔技術於溫度變化下的電性研究

Abstract

在現今的三維積體電路（3DICs）技術中，矽穿孔（Through Silicon Via, TSV）是最重要的關鍵技術，它用於將同質或異質晶片進行垂直方向上的連接。基於先前的研究，奈米碳管（CNTs）因為具有優異的電、熱傳、機械性質而被視為TSV填充材料。然而，奈米碳管TSV的信號傳輸性能非常容易受到工作環境溫度的影響而有所差異。為了評估不同溫度下奈米碳管TSV的電性，需要考慮溫度對於電子平均自由徑（MFP）和奈米碳管導電通道（Conducting Channels）數量。本研究提出了CNTs作為TSV的等效電路模型，並將其電性表現與國際文獻進行基準校正並驗證其正確性。此外，也研究了多壁奈米碳管在不同操作溫度下的多層堆疊系統中的信號完整度，將奈米碳管TSV與傳統銅金屬Cu TSV的進行了電性能比較。結果顯示，當工作溫度在一定範圍內升高時，奈米碳管TSV對於信號傳遞品質會有增加的效果，且隨著溫度的上升，CNTs TSV比Cu TSV具有更多優勢。總結而言，本研究提出更全面的奈米碳管TSV等效電路模型並獲得驗證，同時也證實了奈米碳管在各種環境溫度下皆非常有潛力作為TSV的填充材料。

In nowadays 3-D integrated circuit (3D IC) technology, through silicon via (TSV) is the most important component, which connects homogeneous or heterogeneous dies vertically with each other. Based on our previous research, carbon nanotubes (CNTs) have been considered as TSV filling materials due to their outstanding electrical, thermal, and mechanical properties. However, the operating temperatures would significantly affect the performance of signal transmission in CNTs TSV. To evaluate the electrical characteristics of CNTs TSV with different realistic temperatures, the considerations of temperature-dependent electron mean free path (MFP, λ), and number of conducting channels of CNTs are necessary. In this work, the equivalent circuit model of CNTs as TSV is presented and the simulated electrical behaviors are benchmarked with other literatures. Based on the proposed model, multi-wall (MW) CNTs’ electrical performance in multilayers stacking system under different operating temperatures is investigated. In addition, we also compare the electrical performance of CNTs as TSV with the conventional filling material, copper (Cu). It shows that CNTs TSV has more advantages than Cu TSV when the operating temperature becomes higher. In summary, the proposed equivalent circuit model in this workis more comprehensive and yields more realistic results. Meanwhile, CNT is a promising material for TSV under varying operation temperatures.