應用於毫米波之低雜訊放大器及相移器之研究

Abstract

本篇論文分為三個部分。第一部分描述D頻段高增益低雜訊放大器 ( LNA )是使用28奈米互補式金屬氧化物半導體場效應晶體（CMOS FET）製程，適用於無線電天文學應用並可能在未來第六代無線通訊扮演重要角色。第二部分介紹Ka頻段被動相移器，採用90奈米金氧半場效電晶體製程，用於第五代行動通訊的相位陣列。最後一部分討論Q頻段低雜訊放大器，使用0.15微米砷化鎵僞形態高電子遷移率電晶體 ( GaAs pHEMT ) 製程，適用於無線電天文學應用和第五代行動通訊。 首先，D頻段低雜訊放大器採用增益增強 ( gain-boosting )和補償匹配( compensated matching )技術來實現高增益和寬頻的性能，工作在 129 至 158 GHz 的 3 dB 帶寬內實現了 16.3 dB 小訊號峰值增益和 9.6-12.1 dB 雜訊指數，同時只消耗 38 mW 的功率。其次，採用變壓器拓撲 ( transformer topology ) 設計的Ka頻段被動相移器，不僅可以將晶片尺寸減小到0.19平方毫米，還可以實現在25到33GHz的寬頻特性，並有優異的性能:小於4.7°的均方根 ( RMS ) 相位誤差及小於1.8 dB的均方根(RMS)振幅誤差，且高於9 dBm的輸入功率的增益1dB壓縮點。最後，介紹RC回授網路 ( RC Feedback network ) 的Q頻段低雜訊放大器。所提出的三級LNA展現寬頻的性能，回授網路架構中的電容和電阻值將選擇，優化小訊號增益的平坦度，20.7 dB的小訊號峰值增益和23 GHz的3 dB頻寬 ( 27至50 GHz的頻寬 ) ，並且在31毫瓦的功率消耗下具有最小2.8 dB的雜訊指數。

This thesis is divided into three parts. The first part describes a D-band high-gain low noise amplifier that is implemented in the 28-nm complementary metal oxide semiconductor field-effect transistor (CMOS FET) process for astronomy applications and it is a high possibility to be used for sixth-generation wireless ( 6G ) communication. The second part presents a Ka-band passive phase shifter that is implemented using the 90-nm CMOS process and is intended for 5G phased array system. The final part discusses a Q-band low noise amplifier that is fabricated using the 0.15-um GaAs pHEMT process and is suitable for radio astronomy and fifth-generation wireless ( 5G ) communication. First of all, the proposed amplifier is a D-band low noise amplifier designed to achieve high-gain and broad bandwidth performance through the use of gain boosting and compensated matching techniques. The proposed work achieves 16.3 dB peak gain and 9.6-12.1 dB noise figure across a 3-dB bandwidth from 129 to 158 GHz while consuming only 38 mW of power. Secondly, a passive phase shifter designed for Ka-band using transformer topology is presented. By employing an equivalent transformer model, not only is the chip size reduced to 0.19 mm2, but it also contributes to broadband phase shift. A RMS phase error less than 4.7°, a RMS amplitude error within 1.8 dB, and an IP1dB higher than 9 dBm are characteristics of the circuit from 25 to 33 GHz. Last but not least, a Q-band low noise amplifier with an RC feedback network is illustrated. The proposed 3-stage LNA shows wideband performance, and to optimize the flatness of the small-signal gain, the feedback of the capacitor and resistor are strictly selected. The LNA demonstrates a peak gain of 20.7-dB with a 3-dB bandwidth of 23 GHz, a 27 to 50 GHz bandwidth, and a minimum noise figure of 2.8 dB with a power consumption of 31-mW.