天線輔助之IR光感測器

Abstract

近年來，紅外光元件所研究的領域不論在民生、醫用、軍事或者通訊都有佔有著相當大的比重，隨著科技進步通訊世代不斷提升，為了得到更高效的訊息傳遞速度所有研究人員都積極往紅外光，甚至是中遠紅外光發展。在本篇我們探討光感測器在近紅外光之應用，所採用的材料為四族薄膜半導體材料-鍺錫合金，結合天線結構增強本身感測器之增強效果。 大多數中遠紅外光應用之材料多為使用III-V族和II-VI族材料所製成，在此篇論文我們所使用的材料為鍺錫合金，一種可從間接能隙調變至直接能隙的新型IV族材料，基於此優點可以讓工作頻段隨著施加不同應變及摻雜不同濃度之錫而改變，實現中遠紅外之通訊應用。在增強結構上則是選用了半波偶極子天線，由於此天線簡單的結構以及良好的性能，不論是無線通訊、電視及廣播、射頻辨識都可以見到其身影，本篇則利用此優點再加入本身結構設計，將奈米共振腔結構配合表面電漿子共振之效果增強，達到高度電場集中之效果。 本文所提出的天線輔助式紅外光感測器在模擬之結果中顯現出其增強效果，電場之增強可以使檢測器對於檢測光源的靈敏度提升，能夠更快速的檢測出光的變化，期望藉由實際製程做出不同的設計，並透過儀器測量比對模擬之結果，進而研發出一款能產生更高性能之光感測器。

In recent years, infrared light devices have gained significant importance in various areas including consumer electronics, medical applications, military, and communications. With advancing technology and the constant demand for higher efficiency in information transmission, researchers have been actively exploring the use of infrared light and even mid to far infrared light. In this paper, we investigate the application of optical sensors in the near-infrared range, utilizing a four-group thin film semiconductor material - germanium-tin alloy, combined with an antenna structure to enhance the sensor's performance. Most materials used in mid to far infrared applications are typically from the III-V and II-VI group families. In this study, we focus on a germanium-tin alloy, a novel IV group material that can modulate from indirect to direct bandgap. This advantage allows the working frequency range to be tuned by applying different strains and doping concentrations of tin, enabling communication applications in the mid to far infrared range. For the enhancement structure, we have chosen a half-wave dipole antenna. Due to its simple structure and excellent performance, the half-wave dipole antenna is commonly used in wireless communication, television and broadcasting, and RFID systems. In this study, we leverage these advantages and incorporate them into our structural design to enhance the sensor's performance by utilizing nanoresonator cavity structures in conjunction with surface plasmon resonance for highly concentrated electric field effects. The proposed antenna-assisted infrared sensor demonstrates enhanced performance in our simulation results. The enhancement of the electric field can improve the sensitivity of the detector to detect light sources, enabling faster detection of changes in light. By implementing various designs through actual fabrication and comparing the results with instrumental measurements, we aim to develop a light sensor with higher performance.