寄生閘極離子敏感型場效電晶體於葡萄糖濃度檢測之研究

Abstract

本論文探討了寄生閘極離子敏感型場效電晶體（ISFET）在葡萄糖檢測中的應用。本次研究使用TSMC D35標準CMOS技術設計了兩組晶片，其中包含不同的ISFET結構，並搭配類似雙閘極結構之寄生閘以放大訊號。

研究的目標是分析各種ISFET結構，並找出對閾值電壓(Threshold Voltage)反應最佳的結構。其中2D和3D ISFETs表現出最佳的閾值電壓敏感度，被選中用於測量葡萄糖濃度。

本研究採用的葡萄糖感測機制為葡萄糖氧化酶反應，將電晶體改質後將氧化酶固定於表面，分別加入不同濃度之葡萄糖溶液進行電性量測。並針對不同模式下的晶片進行線性度、靈敏度、選擇性的分析，結果顯示，其擁有很高的線性度以及量測極限，具有葡萄糖監測裝置的潛力。

總結而言，本論文對寄生閘ISFETs在葡萄糖檢測中進行了研究。其中2D 寄生閘極 ISFET 被認為測量葡萄糖濃度的最佳結構，為醫療保健和生物技術領域的應用提供了有希望的前景。

This thesis investigates the application of Parasitic Gate Ion Sensitive Field Effect Transistors (ISFETs) for glucose detection. Two sets of chips were designed using TSMC D35 standard CMOS Technology, incorporating different ISFET structures with a parasitic gate resembling a dual-gate configuration to amplify the signal.

The objective of this research was to analyze various ISFET structures and identify the ones with the best threshold voltage response. The 2D and 3D ISFETs exhibited superior sensitivity to threshold voltage changes and were selected for glucose concentration measurement.

The glucose sensing mechanism employed glucose oxidase reaction, where the enzyme was immobilized on the modified transistor surface. The chips were subjected to electrical measurements with different concentrations of glucose solutions. The linearity, sensitivity, and selectivity of the devices in different modes were analyzed. The results demonstrated high linearity and measurement limits, indicating the potential of the glucose monitoring device.

In conclusion, this thesis presents a study on Parasitic Gate ISFETs for glucose detection. The 2D parasitic gate ISFET was identified as the optimal structure for measuring glucose concentration, offering promising prospects for applications in healthcare and biotechnology.