低溫生長奈米碳管透過多層金屬堆疊應用於半導體三維封裝技術

Abstract

本論文以多層金屬催化層堆疊並於低溫環境下(<400°C)生長奈米碳管，奈米碳管生長方式透過熱化學氣相沉積法進行生長，並於低溫下透過不同參數反應氣體與表面多層金屬催化層反應製備出具良好機械性、電性以及熱傳導性的奈米碳管，製備完成後的奈米碳管透過電子掃描顯微鏡穿透式電子顯微鏡、拉曼光譜分析儀器以及兩點電探針方法分別量測其奈米碳管生長表面品質、電性以及熱傳導性質表現，藉此以證明在低溫環境下生長奈米碳管的可行性，並評估其未來加入三維晶片封裝的可行性。 本論文藉由Ti、Al、Co、Ni、Pd等金屬進行不同組合堆疊濺鍍在矽試片表面，其堆疊金屬層組成結構依序為接著層、阻障層以及催化金屬層，並細分結構為單層金屬催化層結構以及雙層金屬催化層結構，此製程上的改良，使生長出的奈米碳管具整齊性以及筆直度，成功定義奈米碳管叢陣於低溫下生長，驗證其未來作為三維半導體封裝可行性以及可靠性，期望未來整合奈米碳管矽穿孔之研究以實現奈米碳管所帶來的優勢，使其在三維電晶體架構與先進封裝技術的開發中具有潛力能夠在半導體元件或電子產品上發展CNT-based結構，在未來奈米碳管將成為具前瞻性的應用材料。

In this study, we report on the growth of Carbon Nano-tubes a multi-layer metal catalyst stack at low temperatures (<400°C) using the thermal chemical vapor deposition (T-CVD) method. The CNTs were prepared using various reaction gases and surface multi-layer metal catalysts under different parameters, resulting in CNTs with good mechanical, electrical, and thermal properties. The CNTs were characterized using transmission electron microscopy, Raman spectroscopy, and two-point probe method to evaluate their surface quality, electrical and thermal conductivity properties. This study demonstrates the feasibility of growing nanotubes at low temperatures and evaluates their potential for integration into three-dimensional chip packaging. The metal catalyst stack composed of Ti, Al, Co, Ni, Pd, and other metals were sputtered onto silicon wafers, and the stack structure consisted of an adhesion layer, a barrier layer, and a catalytic metal layer. The catalyst layers were divided into single catalytic layer and double catalytic layer structures, which improved the uniformity and straightness of the resulting CNTs. The successful growth of CNT arrays at low temperatures demonstrates the potential and reliability of CNTs for use in three-dimensional semiconductor packaging. The integration of CNT-Silicon via holes in future studies is expected to realize the advantages of CNTs and to make them a promising material for CNT-based structures in the development of advanced packaging technology and semiconductor devices.