Please use this identifier to cite or link to this item:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88082
Title: | 多階態開路電壓和短路電流感測金氧半耦合元件及誘導式軟性崩潰操作技術 Multi-State Open-Circuit Voltage and Short-Circuit Current Sensing in MIS Coupling Devices and Induced Soft Breakdown Operation Technology |
Authors: | 陳舜啓 Shun-Chi Chen |
Advisor: | 胡振國 Jenn-Gwo Hwu |
Keyword: | 金氧半,開路電壓,短路電流,軟性崩潰, MIS,Open-Circuit Voltage,Short-Circuit Current,Soft Breakdown, |
Publication Year : | 2023 |
Degree: | 碩士 |
Abstract: | 本篇論文主要探討金氧半穿隧元件的耦合效應及開路電壓和短路電流感測的多階態特性,元件的電極結構為四個正方形圍繞著一個長方形。在本論文第二章中,金氧半元件因有超薄氧化層的設計,因此可以有極小的飽和電流,並且透過電流-電壓量測後可發現有耦合效應。當外環施加偏壓時,其中心可感應到開路電壓及短路電流,並且隨著外環的數量不同,中心所感應的開路電壓和短路電流也有明顯區別,因此可作為多階態展現的金氧半元件。在本論文第三章中,為了較相容現今的技術節點,因此利用厚薄氧化層的製程將元件微縮,並且採用先生長厚氧化層再生長薄氧化層的方式,厚薄氧化層的元件會因為厚區不斷提供少數載子至薄區,因此電流無法達到飽和也無耦合效應。本研究提出了特別的引導式軟性崩潰操作,可以使氧化層局部薄化,將元件的特性改變,使得電流進入飽和並且開路電壓有耦合效應,元件也能展現出多階態特性。特別的軟性崩潰方法是利用感應電場的分布不均,將外環和中心的氧化層局部薄化點盡可能的靠近,因此能使耦合效應增強。為了能驗證電場和電子濃度的分布,使用了SILVACO TCAD軟體進行電場和電子濃度的模擬,結果也和所提出的想法相符合。因此,不論是超薄氧化層或是厚薄氧化層的金氧半穿隧元件,都具有作為多階態特性元件的潛力。 In this thesis, the coupling effect of the metal insulator semiconductor tunneling diodes (MIS TD) and the multi-state characteristics of open-circuit voltage and short-circuit current sensing of the device have been investigated. The electrode pattern of the device is four squares surrounding a rectangle. In Chapter 2, due to the design of the ultra-thin oxide layer, the device has extremely low saturation current. The coupling effect was found through the current-voltage measurement. Applying a bias voltage to the outer rings, the open-circuit voltage and the short-circuit current were sensed in the center. The magnitude of sensed open-circuit voltage and sensed short-circuit current are also significantly different with different number of outer rings, so it can be used as a multilevel device. In Chapter 3, in order to be compatible with current technology nodes, the device is scaled by the high-low oxide process. The method of growing thick oxide first and then thin oxide is used. Because the thick oxide region will provide extra minority carriers to the thin oxide region, there would be no saturation current and no coupling effect of the device. Therefore, a special method of induced soft breakdown operation was proposed, which can create the oxide local thinning (OLT) and change the characteristics of the device. The current is saturated and the open-circuit voltage exhibits coupling effect. Hence, the device can also exhibit multi-level characteristic. The special soft breakdown operation is based on the uneven distribution of the induced electric field, and to make OLT spot of the outer rings and the center as close as possible, so that the coupling effect can be enhanced. In order to verify the distribution of the electric field and the electron concentration, SILVACO TCAD software is used to simulate the electric field and the electron concentration. The result is consistent with the proposed method. Therefore, both of MIS tunneling diodes with ultra-thin oxide and high-low oxide have the potential to be used as multi-state characteristic devices. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88082 |
DOI: | 10.6342/NTU202300778 |
Fulltext Rights: | 同意授權(全球公開) |
Appears in Collections: | 電子工程學研究所 |
Files in This Item:
File | Size | Format | |
---|---|---|---|
ntu-111-2.pdf | 3.22 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.