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標題: | 可視化近紅外光技術:有機上轉換元件開發與應用 Infrared visualization technology: The development and application of organic upconversion device |
作者: | 施淳仁 Chun-Jen Shih |
指導教授: | 李君浩 Jiun-Haw Lee |
關鍵字: | 有機上轉換元件,近紅外光成像,非富勒烯受體,激發複合物,光通訊,反偵測, Organic upconversion device,Near-infrared imaging,Non-fullerene acceptor,Exciplex,Optical communication,Anti-detection, |
出版年 : | 2023 |
學位: | 博士 |
摘要: | 近紅外影像技術應用領域廣泛,包含生醫影像、環境監控、影像融合、體徵辨識、以及光通訊領域。有別於現有無機半導體技術仰賴微影化製程,點陣化紅外訊號並以矩陣面板呈現可見光影像;本論文以全有機半導體材料為基礎,在無需複雜像素化條件下,透過連續堆疊功能性薄膜,將有機光感測器以及有機發光二極體進行異質整合,實現近紅外光轉換至可見光譜效果,稱作有機上轉換元件(Organic upconversion device; OUD)。
論文首先對蒸鍍型小分子材料-氯铝酞菁(Chloroaluminum phthalocyanine; ClAlPc)進行材料光物理特性分析,以超快光譜學解析在施加電場下能有效延長ClAlPc自由載子之壽命,將其作為元件載子產生層開發。以半導體材料存在極性相反之電洞以及電子流為基礎,針對電洞驅動型、電子驅動型、以及雙載子驅動型串座元件結構進行開發,在導入激發複合物為磷光發光層主體下,上轉換量子效率分別達到14.4%、16.1%、以及31.2%,屬歷年最佳上轉換成果。在後續驗證其影像解析度極限達5080 ppi、-3 dB頻寬響應速度最高達100 kHz,展示無線通訊介面概念。 與此同時,本論文亦針對非富勒烯受體材料(Non-fullerene acceptor; NFA)-COTIC-4F進行獨立探討,在與施體材料PTB7-Th形成混合異質介面結構下(Bulk heterojunction; BHJ),其在940 nm近紅外波長之絕對感測度高於1013 Jones,展示此材料系統作為載子產生層之潛力,並在此提出一大面積(10.35 cm2)、平均可見光穿透度接近60%(Average visible transmittance;AVT)、且輕薄(22.91 g)之上轉換成像裝置,其最低感測近紅外強度低於1.0 μW cm-2。在後續近紅外弱光影像解析應用上,除驗證血管造影之生醫影像,進一步將其整合為穿戴式裝置,針對近年隱私意識抬頭議題提出反紅外光偵測之使用情境。 Near-infrared imaging technologies have been applied to various fields, including biomedical imaging, environmental monitoring, image fusion, biometrics, and optical communication. However, unlike the existing inorganic semiconductors that required costly photolithographic techniques to digitalize infrared information for external read-out, this thesis demonstrates the visualization of near-infrared images using all-organic materials without pixelation. By utilizing a multi-layered stack of functional thin films, which integrates an organic photodetector with an organic light-emitting diode, the organic upconversion device can convert infrared signals into the visible spectrum. At first, the photophysical characteristics of chloroaluminum phthalocyanine (ClAlPc), a small molecule deposited through thermal evaporation, were investigated in detail. The ClAlPc exhibited an extended free charge carrier lifetime under an electrical field, as observed in ultrafast spectroscopy experiments. Consequently, the ClAlPc was employed as the charge generation layer in the upconversion device. By leveraging the bipolar nature of the semiconductor materials, three device structures were developed: hole-driven, electron-driven, and bipolar-driven tandem device structures. The introduction of a bipolar exciplex co-host system in the phosphorescent emission layer led to remarkable quantum efficiencies of 14.4%, 16.1%, and 31.2%, respectively, representing the highest reported results. The optimized device, capable of achieving a maximum image resolution of 5080 pixels per inch (ppi) and a -3 dB response bandwidth of 100 kHz, was utilized to create a wireless communication interface. At the same time, a non-fullerene acceptor (NFA) COTIC-4F was also investigated, in combination with an electron-donor (PTB7-Th), to form a bulk heterojunction (BHJ) blend. Under the excitation at a wavelength of 940 nm, the specific detectivity surpassed 1013 Jones, showcasing the material system's potential as a charge generation layer. Subsequently, a large-area (10.35 cm2), semi-transparent (average visible transmittance~ 60%), and light-weight (22.91 g) upconversion device was further developed to resolve weak infrared signal with power density lower than 1.0 μW cm-2. In addition to biomedical applications, such as blood vessel imaging, the thesis proposed a wearable anti-detection device to address growing concerns over privacy breaches. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88054 |
DOI: | 10.6342/NTU202301542 |
全文授權: | 未授權 |
顯示於系所單位: | 光電工程學研究所 |
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