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標題: | 利用圖案化基板所成長的紫外光LED磊晶品質及其材料特性之拉曼量測分析 Characterization of crystalline quality of near-ultraviolet light-emitting diodes on Patterned-Sapphire Substrates by Raman spectroscopy |
作者: | Wen-I Cheng 鄭文逸 |
指導教授: | 管傑雄(Chieh-Hsiung Kuan) |
關鍵字: | 圖案化藍寶石基板,氮化鎵,拉曼頻譜,蝕刻孔洞密度,穿隧差排, PSS,GaN,Raman spectrum,EPD,Threading dislocations, |
出版年 : | 2019 |
學位: | 碩士 |
摘要: | 隨著紫外光LED需求增加,製備高品質紫外光LED也成了首要目標,然而氮化鎵的異質磊晶使的氮化鎵薄膜產生大量穿隧差排,產生非輻射電子電洞複合中心,大幅度降低磊晶品質以及發光效率。
在本篇論文中,我們使用圖案化藍寶石基板技術,並透過有機金屬化學氣相沉積磊晶出高品質的氮化鎵,我們使用拉曼頻譜分析與濕蝕刻蝕刻孔洞密度的方法,來證實圖案化藍寶石基板技術確實提高了氮化鎵的磊晶品質。實驗結果顯示,利用圖案化藍寶石基板技術,我們成功將拉曼頻譜半高寬由平片2.64 (cm-1) 降到2.31 (cm-1),縮減了12.6%,蝕刻孔洞法亦指出缺陷密度減少了20.5%,大幅度提升了氮化鎵薄膜磊晶品質。 研究亦透過設計不同週期、比例、深度的微結構,獲得不同磊晶品質的氮化鎵薄膜,以半高寬及殘存應力建構一套完整的物理模型,我們的物理模型成功預測不同週期、比例與深度的品質變化,並可透過此預測LED磊晶之結果。 With the increasing demand for ultraviolet LEDs, the fabrication of high-quality UV LEDs has also become the primary work. However, the heteroepitaxial of GaN on sapphire substrate induces a large number of threading dislocation. These dislocations become electron-hole pair non-radiative recombination centers, which dramatically decline the quality of GaN and reduce luminous efficiency. In this paper, we grow GaN through Metal-Organic Chemical Vapor Deposition (MOCVD) and introduce its crystal quality by introduce the patterned-sapphire substrate technology. We use Raman spectrum analysis and etch pit density method to investigate and calculate the defect density. The Raman spectrum shows a decrease of FWHM from 2.64 (cm-1) to 2.31 (cm-1), which is about 12.6% improvement, and the EPD method indicates around 20.5% reduction of defect density. The results successfully confirmed that the epitaxial quality of GaN is improved with the patterned-sapphire substrate technology. Different periods, ratio, and depths of pattern structures have been designed to verify the trend of crystal quality, and we conclude a complete physics model for the quality prediction of GaN epitaxy. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/7995 |
DOI: | 10.6342/NTU201903317 |
全文授權: | 同意授權(全球公開) |
電子全文公開日期: | 2024-08-22 |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
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ntu-108-1.pdf 此日期後於網路公開 2024-08-22 | 4.03 MB | Adobe PDF |
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