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Title: | 藉由圖案化藍寶石基板磊晶降低氮化鋁鎵/氮化鎵高電子遷移率電晶體之錯位密度 Reducing the dislocations of AlGaN/GaN HEMTs by Patterened Sapphire Substrate Epitaxy |
Authors: | Chien-Tsun Chan 詹前村 |
Advisor: | 管傑雄(Chieh-Hsiung Kuan) |
Keyword: | 圖案化藍寶石基板,氮化鋁鎵/氮化鎵高電子遷移率電晶體,拉曼頻譜,蝕刻孔洞密度,貫穿差排, PSS,AlGaN/GaN HEMT,Raman spectrum,EPD,Threading dislocations, |
Publication Year : | 2018 |
Degree: | 碩士 |
Abstract: | 氮化鋁鎵/氮化鎵異質結構因寬能隙特性與二維電子氣(2DEG)的存在,故具有大的崩潰電場和較高的電子遷移率,可被應用在高功率、高頻率操作的元件製作上,是目前相當有潛力取代矽的半導體材料之一。
在本篇論文中,主要利用有機金屬化學氣相沉積以及圖案化藍寶石基板技術成長高品質的氮化鎵,並用來製作氮化鋁鎵/氮化鎵高電子遷移率電晶體,我們使用拉曼頻譜分析與濕蝕刻蝕刻孔洞密度的方式,證實圖案化藍寶石基板技術確實提高了氮化鎵的磊晶品質,並且設計不同微結構的蝕刻深度,獲得不同缺陷密度的氮化鎵,透過在不同缺陷密度的材料上製作高電子遷移率電晶體,整理出缺陷密度與元件效能之相關性。 利用圖案化藍寶石基板技術,成功將原先蝕刻孔洞密度為1.06x107(cm-2)之氮化鎵降低至蝕刻孔洞密度為2.52x106(cm-2),拉曼頻譜半高寬也對應從2.34(cm-1)降到2.25(cm-1),同時電晶體的最大汲極飽和電流從308(mA/mm)提升至469(mA/mm),直流導通阻抗從16.4(Ωmm)降低至5.6(Ωmm),轉換電導從73.8(mS/mm)提升到115.3(mS/mm)。 AlGaN/GaN heterojunction own large critical electric field and high electron mobility because of wide bandgap and 2DEG.Therefore,we can apply it to manufacturing high-power and high-frequency device.Currently,GaN has great opportunity for replacing Si. In this study,we primarily utilize PSS technology to expitaxy high-quality GaN by MOCVD and fabricate AlGaN/GaN HEMTs.We confirm that PSS technology indeed improve expitaxy quality by Raman analysis and EPD method.Moreover,we also design different etching depth to obtain different defect density material and find correlation between defect density and device performance. We successfully reduce etching pits density from 1.06x107(cm-2) to 2.52x106(cm-2) and FWHM of Raman spectrum from 2.34(cm-1) to 2.25(cm-1) by utilizing PSS technology. At the same time,we enhance the maximum drain current(IDS,max) from 308(mA/mm) to 469(mA/mm),reduce on-resistance(Ron) from 16.4(Ωmm) to 5.6(Ωmm),and increase transconductance from 73.8(mS/mm) to 115.3(mS/mm). |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78929 |
DOI: | 10.6342/NTU201803877 |
Fulltext Rights: | 有償授權 |
metadata.dc.date.embargo-lift: | 2023-08-23 |
Appears in Collections: | 電子工程學研究所 |
Files in This Item:
File | Size | Format | |
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ntu-107-R05943071-1.pdf Restricted Access | 3.03 MB | Adobe PDF |
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