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Title: | P通道錫鎳氧化物薄膜電晶體 P-Channel SnNiOx Thin-Film Transistors |
Authors: | Cheng-En Yang 楊承恩 |
Advisor: | 陳奕君 |
Keyword: | 氧化亞錫,氧化鎳,氧化物薄膜電晶體,磁控射頻共濺鍍技術, tin monoxide,nickel oxide,oxide thin film transistor,RF magnetron sputtering, |
Publication Year : | 2020 |
Degree: | 碩士 |
Abstract: | 本論文主要目的有兩個,一是研究p 型SnNiOx 薄膜性質,二是開發p 型SnNiOx 薄膜電晶體及探討其電性。長期以來,n 型高效能氧化物薄膜電晶體(TFT)的特性遠優於p 型,特別是p 型氧化物TFT 的載子遷移率往往不足以應用於互補的反相器和邏輯電路。因此,提高p 型氧化物薄膜電晶體的載子遷移率是本研究的目標。 研究中我們使用磁控射頻共濺射技術沉積 SnNiOx 薄膜,在固定錫槍的功率、工作壓力、濺鍍時間、氬氧流量比和後退火溫度條件下,調變鎳槍的功率(0 – 50 W),以獲得不同鎳摻雜量的SnNiOx 薄膜。 在薄膜分析部分,從低掠角X 光繞射分析得知,隨鎳槍濺鍍功率增加,SnNiOx薄膜結晶方向從α-SnO(110)轉變為非晶再轉變為α-SnO(101)。接著根據X光光電子能譜縱深分析發現,在錫槍/鎳槍的濺鍍功率為50 W / 50 W 時,從表面到薄膜深處,錫的價數從Sn4+為主,再到Sn2+為主,最後是以Sn0+為主,這表示越靠近表面越容易氧化。此外,Ni 的成分也隨著縱深而增加。從光學分析得知,隨鎳槍濺鍍功率增加,SnNiOx 薄膜的光學直接能隙逐漸降低。從賽貝克係數的量測確認使用不同鎳槍濺鍍功率所沉積的SnNiOx 薄膜除了錫槍/鎳槍的濺鍍功率為50 W / 20 W 之外其餘均為p 型。 接著利用不同鎳槍濺鍍功率下所獲得的SnNiOx 薄膜作為主動層,採用高介電常數材料氧化鉿作為介電層,製備下閘極交錯型p 型SnNiOx 薄膜電晶體。在錫槍/鎳槍濺鍍功率為50 W / 35 W 時,電晶體具最高開關比 (1074),而在錫槍/鎳槍濺鍍功率為50 W / 50 W,有最高的場效遷移率 (6.2 cm2V-1s-1),大約是氧化亞錫薄膜電晶體 (0.48 cm2V-1s-1) 的13 倍之多。 There are two main objectives in this thesis. One is to study the properties of p-type SnNiOx thin films, and the other is to fabricate and investigate p-type SnNiOx thin-film transistors (TFTs). Today, most of the high performance oxide TFTs are of ntype. The development of p-type oxide TFTs is still in its early stage. In particular, the mobility of p-type oxide TFTs is insufficient for complementary inverters and logic circuits applications. Therefore, enhancing the mobility of p-type oxide TFTs is our goal. In this research, we use the RF magnetron co-sputtering technique to deposit SnNiOx thin films. At a fixed Sn gun power, working pressure (WP), sputtering time, oxygen fraction (OFR) in sputtering gas, and post-deposition annealing (PDA) temperature, the Ni gun power is adjusted from 0 to 50 W to obtain SnNiOx thin films with various Ni doping concentrations. The grazing incident X-ray diffraction (GIXRD) analysis shows that the preferred orientation of the SnNiOx thin film changes from α-SnO (110) to amorphous and then to α-SnO (101) as the power of Ni gun increases. The X-ray photoemission spectroscopy (XPS) depth profiling analysis reveals that the predominant valance of Sn in the SnNiOx thin film changes from Sn4+ to Sn2+ to Sn0+ from the top surface to deep inside the film, indicating the surface oxidization effect. In addition, the Ni content is higher in the deeper part of the SnNiOx thin film. The optical absorption analysis shows that as the power of the Ni gun increases, the optical bandgap gradually decreases. The Seebeck coefficient measurement confirms that the SnNiOx thin films deposited with Ni gun at various sputtering powers are all p-type except the one deposited with Sn-gun / Ni-gun at the power of 50 W / 20 W. Inverted-staggered bottom-gate TFTs with SnNiOx channels deposited at various Ni gun powers are then fabricated. High-k HfO2 is used as the gate dielectric. At the Sn-gun / Ni-gun power of 50 W / 35 W, the TFT exhibits the highest on-off ratio of 1074. At the Sn-gun / Ni-gun power of 50 W / 50 W, the TFT has the highest field-effect mobility of 6.2 cm2V-1s-1, which is thirteen times larger than that of the SnO TFT (0.48 cm2V-1s-1). |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78413 |
DOI: | 10.6342/NTU202000791 |
Fulltext Rights: | 有償授權 |
metadata.dc.date.embargo-lift: | 2023-07-31 |
Appears in Collections: | 光電工程學研究所 |
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ntu-109-R06941122-1.pdf Restricted Access | 6.87 MB | Adobe PDF |
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