請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77883
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林清富(Ching-Fuh Lin) | |
dc.contributor.author | Hung-Chieh Chuang | en |
dc.contributor.author | 莊閎傑 | zh_TW |
dc.date.accessioned | 2021-07-11T14:36:39Z | - |
dc.date.available | 2022-08-31 | |
dc.date.copyright | 2017-08-31 | |
dc.date.issued | 2017 | |
dc.date.submitted | 2017-08-16 | |
dc.identifier.citation | [1] Skoog, D. A., Holler, F. J., & Crouch, S. R. (1998). Principles of instrumental analysis. Cengage learning.
[2] Hollas, J. M. (2004). Modern spectroscopy. John Wiley & Sons. [3] Harris, D. C., & Bertolucci, M. D. (1978). Symmetry and spectroscopy: an introduction to vibrational and electronic spectroscopy. Courier Corporation. [4] Bernath, P. F. (2015). Spectra of atoms and molecules. Oxford university press. [5] Ingle Jr, J. D., & Crouch, S. R. (1988). Spectrochemical analysis. [6] Infrared Sensor Application Note 1: A Background to Gas Sensing by Non-Dispersive Infrared (NDIR), SGX Sensortech Ltd, 2007. [7] Sun, D. W. (Ed.). (2009). Infrared spectroscopy for food quality analysis and control. Academic Press. [8] Sands, D. E. (1969). Introduction to crystallography. Courier Corporation. [9] Bowley, H. J., Gerrard, D. L., Louden, J. D., & Turrell, G. (2012). Practical raman spectroscopy. Springer Science & Business Media. [10] Stáhlavská, A. (1973). The use of spectrum analytical methods in drug analysis. 1. Determination of alkaline metals using emission flame photometry. Pharmazie, vol. 28, no. 4, pp. 238–239. [11] Hirsh, R. F. (1979). The riddle of the gaseous nebulae. Isis, 70(2), 197-212. [12] http://taqm.epa.gov.tw/taqm/tw/b0201.aspx [Accessed: June-13-2016] [13] http://www.police.taichung.gov.tw/TCPBWeb/wSite/ct?xItem=5871&ctNode=901&mp=1 [Accessed: June-13-2016] [14] Rayleigh, L. (1874). XII. On the manufacture and theory of diffraction-gratings. The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, 47(310), 81-93. [15] Wood, R. W. (1910). LXXXV. The echelette grating for the infra-red. The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, 20(118), 770-778. [16] https://www.thorlabs.com/tutorials.cfm?tabID=0ca9a8bd-2332-48f8-b01a-7f8bf0c03d4e [Accessed: June-29-2017] [17] Mikhelashvili, V., Eisenstein, G., & Uzdin, R. (2001). Extraction of Schottky diode parameters with a bias dependent barrier height. Solid-State Electronics, 45(1), 143-148. [18] Jyothi, I., Yang, H. D., Shim, K. H., Janardhanam, V., Kang, S. M., Hong, H., & Choi, C. J. (2013). Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator. Materials Transactions, 54(9), 1655-1660. [19] Yeganeh, M. A., & Rahmatollahpur, S. H. (2010). Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes. Journal of semiconductors, 31(7), 074001. [20] Turut, A., Saglam, M., Efeoglu, H., Yalcin, N., Yildirim, M., & Abay, B. (1995). Interpreting the nonideal reverse bias CV characteristics and importance of the dependence of Schottky barrier height on applied voltage. Physica B: Condensed Matter, 205(1), 41-50. [21] Fan, H. Y., & Ramdas, A. K. (1959). Infrared absorption and photoconductivity in irradiated silicon. Journal of Applied Physics, 30(8), 1127-1134. [22] Archer, R., & Cohen, J. (1973). U.S. Patent No. 3,757,123. Washington, DC: U.S. Patent and Trademark Office. [23] Kimata, M., Denda, M., Fukumoto, T., Tsubouchi, N., Uematsu, S., Shibata, H., ... & Kanno, T. (1982). Platinum silicide Schottky-barrier IR-CCD image sensors. Japanese Journal of Applied Physics, 21(S1), 231. [24] Scales, C., & Berini, P. (2010). Thin-film Schottky barrier photodetector models. IEEE Journal of quantum electronics, 46(5), 633-643. [25] Lai, Y. S., Chen, H. L., & Yu, C. C. (2014). Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at telecommunication wavelengths. Nature communications, 5, 3288. [26] Gao, Y., Cansizoglu, H., Polat, K. G., Ghandiparsi, S., Kaya, A., Mamtaz, H. H., ... & Devine, E. P. (2017). Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes. Nature Photonics, 11(5), 301-308. [27] Hankus, M. E., Stratis-Cullum, D. N., & Pellegrino, P. M. (2011). Surface enhanced Raman scattering (SERS)-based next generation commercially available substrate: physical characterization and biological application (No. ARL-RP-0335). ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE. [28] Xu, Z., Wu, H. Y., Ali, S. U., Jiang, J., Cunningham, B. T., & Liu, G. L. (2011). Nanoreplicated positive and inverted submicrometer polymer pyramid array for surface-enhanced Raman spectroscopy. Journal of Nanophotonics, 5(1), 053526-053526. [29] Gobin, A. M., Lee, M. H., Halas, N. J., James, W. D., Drezek, R. A., & West, J. L. (2007). Near-infrared resonant nanoshells for combined optical imaging and photothermal cancer therapy. Nano letters, 7(7), 1929-1934. [30] Chu, C. K., Tu, Y. C., Hsiao, J. H., Yu, J. H., Yu, C. K., Chen, S. Y., ... & Yang, C. C. (2016). Combination of photothermal and photodynamic inactivation of cancer cells through surface plasmon resonance of a gold nanoring. Nanotechnology, 27(11), 115102. [31] Knight, M. W., Sobhani, H., Nordlander, P., & Halas, N. J. (2011). Photodetection with active optical antennas. Science, 332(6030), 702-704. [32] Chen, H. L., Lai, Y. S., & Yu, C. C. (2014). Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at telecommunication wavelengths. Nature communications, 5, 3288. [33] Mott, N. F. (1938, October). Note on the contact between a metal and an insulator or semi-conductor. In Mathematical Proceedings of the Cambridge Philosophical Society (Vol. 34, No. 4, pp. 568-572). Cambridge University Press. [34] Scales, C., & Berini, P. (2010). Thin-film Schottky barrier photodetector models. IEEE Journal of quantum electronics, 46(5), 633-643. [35] Clavero, C. (2014). Plasmon-induced hot-electron generation at nanoparticle/metal-oxide interfaces for photovoltaic and photocatalytic devices. Nature Photonics, 8(2), 95-103. [36] Li, J., Cushing, S. K., Meng, F., Senty, T. R., Bristow, A. D., & Wu, N. (2015). Plasmon-induced resonance energy transfer for solar energy conversion. Nature Photonics, 9(9), 601-607. [37] Atwater, H. A., & Polman, A. (2010). Plasmonics for improved photovoltaic devices. Nature materials, 9(3), 205. [38] Koller, D. M., Hohenau, A., Ditlbacher, H., Galler, N., Reil, F., Aussenegg, F. R., ... & Krenn, J. R. (2008). Organic plasmon-emitting diode. Nature Photonics, 2(11), 684-687. [39] Yu, N., Fan, J., Wang, Q. J., Pfluegl, C., Diehl, L., Edamura, T., ... & Capasso, F. (2008). Small-divergence semiconductor lasers by plasmonic collimation. nature photonics, 2(9), 564-570. [40] Wu, C. Y., Kuo, C. T., Wang, C. Y., He, C. L., Lin, M. H., Ahn, H., & Gwo, S. (2011). Plasmonic green nanolaser based on a metal–oxide–semiconductor structure. Nano letters, 11(10), 4256-4260. [41] Ishi, T., Fujikata, J., Makita, K., Baba, T., & Ohashi, K. (2005). Si nano-photodiode with a surface plasmon antenna. Japanese Journal of Applied Physics, 44(3L), L364. [42] Tang, L., Kocabas, S. E., Latif, S., Okyay, A. K., Ly-Gagnon, D. S., Saraswat, K. C., & Miller, D. A. (2008). Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna. Nature Photonics, 2(4), 226-229. [43] Mühlschlegel, P., Eisler, H. J., Martin, O. J. F., Hecht, B., & Pohl, D. W. (2005). Resonant optical antennas. science, 308(5728), 1607-1609. [44] Lal, S., Link, S., & Halas, N. J. (2007). Nano-optics from sensing to waveguiding. Nature photonics, 1(11), 641-648. [45] Nazirzadeh, M. A., Atar, F. B., Turgut, B. B., & Okyay, A. K. (2014). Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection. Scientific reports, 4. [46] Tan, C. L., Jang, S. J., & Lee, Y. T. (2012). Localized surface plasmon resonance with broadband ultralow reflectivity from metal nanoparticles on glass and silicon subwavelength structures. Optics express, 20(16), 17448-17455. [47] Paterson, S., Thompson, S. A., Wark, A. W., & de la Rica, R. (2017). Gold Suprashells: Enhanced Photothermal Nanoheaters with Multiple Localized Surface Plasmon Resonances for Broadband Surface-Enhanced Raman Scattering. The Journal of Physical Chemistry C, 121(13), 7404-7411. [48] Brückner, R., Zakhidov, A. A., Scholz, R., Sudzius, M., Hintschich, S. I., Fröb, H., ... & Leo, K. (2012). Phase-locked coherent modes in a patterned metal-organic microcavity. Nature Photonics, 6(5), 322-326. [49] Huang, W. L., Hsiao, H. H., Tang, M. R., & Lee, S. C. (2016). Triple-wavelength infrared plasmonic thermal emitter using hybrid dielectric materials in periodic arrangement. Applied Physics Letters, 109(6), 063107. [50] Wu, C. Y., He, C. L., Lee, H. M., Chen, H. Y., & Gwo, S. (2010). Surface-plasmon-mediated photoluminescence enhancement from red-emitting InGaN coupled with colloidal gold nanocrystals. The Journal of Physical Chemistry C, 114(30), 12987-12993. [51] Heylman, K. D., Thakkar, N., Horak, E. H., Quillin, S. C., Cherqui, C., Knapper, K. A., ... & Goldsmith, R. H. (2016). Optical microresonators as single-particle absorption spectrometers. Nature Photonics, 10(12), 788-795. [52] Cowley, A. M. (1970). Titanium-silicon Schottky barrier diodes. Solid-State Electronics, 13(4), 403-414. [53] Casalino, M., Sirleto, L., Moretti, L., & Rendina, I. (2008). A silicon compatible resonant cavity enhanced photodetector working at 1.55 µm. Semiconductor Science and Technology, 23(7), 075001. [54] Kimata, M., Denda, M., Fukumoto, T., Tsubouchi, N., Uematsu, S., Shibata, H., ... & Kanno, T. (1982). Platinum silicide Schottky-barrier IR-CCD image sensors. Japanese Journal of Applied Physics, 21(S1), 231. [55] Kosonocky, W. F., Shallcross, F. V., Villani, T. S., & Groppe, J. V. (1985). 160× 244 element PtSi Schottky-barrier IR-CCD image sensor. IEEE Transactions on Electron Devices, 32(8), 1564-1573. [56] Schottky, W. (1942). Vereinfachte und erweiterte Theorie der Randschicht-gleichrichter. Zeitschrift für Physik A Hadrons and Nuclei, 118(9), 539-592. [57] Sze, S. M., & Ng, K. K. (2006). Physics of semiconductor devices. John wiley & sons. [58] Kreibig, U., & Vollmer, M. (1995). Theoretical considerations. In Optical Properties of Metal Clusters (pp. 13-201). Springer Berlin Heidelberg. [59] http://encyclopedia.che.engin.umich.edu/Pages/Reactors/CVDReactors/CVDReactors.html [Accessed: Jun-29-2016] [60] https://www.suss.com/en/products-solutions/mask-aligner/mjb4 [Accessed: July-07-2017] [61] Coburn, J. W., & Winters, H. F. (1979). Ion‐and electron‐assisted gas‐surface chemistry—An important effect in plasma etching. Journal of Applied physics, 50(5), 3189-3196. [62] Oehrlein, G. S. (1986). Reactive‐Ion Etching. Physics Today, vol. 39, p. 26. [63] https://jascoinc.com/products/spectroscopy/uv-visible-nir-spectrophotometers/models/v-770-uv-visible-nir-spectrophotometer/ [Accessed: June-10-2017] [64] R. B. Darling, “Wet Etching,” class notes for EE-527, Department of Electrical Engineering, University of Washington [Online]. Available: https://www.ee.washington.edu/research/microtech/cam/PROCESSES/PDF%20FILES/WetEtching.pdf [Accessed: June-13-2015] [65] Chu, A. K., Wang, J. S., Tsai, Z. Y., & Lee, C. K. (2009). A simple and cost-effective approach for fabricating pyramids on crystalline silicon wafers. Solar Energy Materials and Solar Cells, 93(8), 1276-1280. [66] Muñoz, D., Carreras, P., Escarré, J., Ibarz, D., De Nicolás, S. M., Voz, C., ... & Bertomeu, J. (2009). Optimization of KOH etching process to obtain textured substrates suitable for heterojunction solar cells fabricated by HWCVD. Thin Solid Films, 517(12), 3578-3580. [67] Mavrokefalos, A., Han, S. E., Yerci, S., Branham, M. S., & Chen, G. (2012). Efficient light trapping in inverted nanopyramid thin crystalline silicon membranes for solar cell applications. Nano letters, 12(6), 2792-2796. [68] Fan, Y., Han, P., Liang, P., Xing, Y., Ye, Z., & Hu, S. (2013). Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells. Applied Surface Science, 264, 761-766. [69] Gobrecht, H. (1962). PJ Holmes, The Electrochemistry of Semiconductors. Academic Press, London und New York, 1962; Band X aus der Reihe „Physical Chemistry” ︁. 396 Seiten, 134 Abbildungen, 32 Tabellen, 772 Literaturhinweise. Preis: 84 s. Berichte der Bunsengesellschaft für physikalische Chemie, 66(8‐9), 769-769. [70] Seidel, H., Csepregi, L., Heuberger, A., & Baumgärtel, H. (1990). Anisotropic etching of crystalline silicon in alkaline solutions I. Orientation dependence and behavior of passivation layers. Journal of the electrochemical society, 137(11), 3612-3626. [71] “Wet-Chemical Etching and Cleaning of Silicon,” Virginia Semiconductor, Inc., Virginia, USA, January, 2003. [72] 薛華毅, “矽基微型光譜儀,” 國立台灣大學光電工程學研究所碩士論文, 2015年6月。 [73] 吳皓郁, “溶液製程法氧化鋅於氮化鎵磊晶製程的應用,” 國立台灣大學光電工程學研究所碩士論文, 2014年6月。 [74] Sze, S. M., & Ng, K. K. (2006). Physics of semiconductor devices. John wiley & sons. [75] Anderson, B., & Anderson, R. (2004). Fundamentals of semiconductor devices. McGraw-Hill, Inc., pp.317-333. [76] 鄭竣中, “可見光/紅外光偵測器技術之研究,” 國立台灣大學光電工程學研究所碩士論文, 2016年8月。 [77] Casalino, M., Sirleto, L., Moretti, L., & Rendina, I. (2008). A silicon compatible resonant cavity enhanced photodetector working at 1.55 µm. Semiconductor Science and Technology, 23(7), 075001. [78] Chettiar, U. K., Nyga, P., Thoreson, M. D., Kildishev, A. V., Drachev, V. P., & Shalaev, V. M. (2010). FDTD modeling of realistic semicontinuous metal films. Applied Physics B: Lasers and Optics, 100(1), 159-168. [79] Spicer, W. E., Lindau, I., Skeath, P., & Su, C. Y. (1980). Unified defect model and beyond. Journal of Vacuum Science and Technology, 17(5), 1019-1027. [80] Heine, V. (1965). Theory of surface states. Physical Review, 138(6A), A1689. [81] Desiatov, B., Goykhman, I., Mazurski, N., Shappir, J., Khurgin, J. B., & Levy, U. (2015). Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime. Optica, 2(4), 335-338. [82] Xu, Z., Wu, H. Y., Ali, S. U., Jiang, J., Cunningham, B. T., & Liu, G. L. (2011). Nanoreplicated positive and inverted submicrometer polymer pyramid array for surface-enhanced Raman spectroscopy. Journal of Nanophotonics, 5(1), 053526-053526. [83] Fan, Y., Han, P., Liang, P., Xing, Y., Ye, Z., & Hu, S. (2013). Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon solar cells. Applied Surface Science, 264, 761-766. [84] Quan, B., Yao, Z., Sun, W., Liu, Z., Xia, X., Gu, C., & Li, J. (2016). Fabrication of inverted pyramidal pits with Nano-opening by laser interference lithography and wet etching. Microelectronic Engineering, 163, 110-114. [85] Freeouf, J. L., & Woodall, J. M. (1990). Schottky barriers: An effective work function model. In Electronic Structure of Metal-Semiconductor Contacts (pp. 154-156). Springer Netherlands. [86] Hasegawa, H., Sato, T., & Kaneshiro, C. (1999). Properties of nanometer-sized metal–semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 17(4), 1856-1866. [87] Kontermann, S., Gimpel, T., Baumann, A. L., Guenther, K. M., & Schade, W. (2012). Laser processed black silicon for photovoltaic applications. Energy Procedia, 27, 390-395. [88] Sheehy, M. A., Winston, L., Carey, J. E., Friend, C. M., & Mazur, E. (2005). Role of the background gas in the morphology and optical properties of laser-microstructured silicon. Chemistry of Materials, 17(14), 3582-3586. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77883 | - |
dc.description.abstract | 隨著工業科技日益蓬勃發展,於人類生活中逐漸充斥著各種汙染物,如農藥、空氣汙染、食品添加物與藥物,因此發展即時、隨身與高可信度之檢測裝置將成為未來生活安全的重要議題,於本論文中將提出如何以矽基奈微米技術搭配光譜檢測技術,發展隨身攜帶光譜檢測裝置,並以矽奈微米技術克服現有光譜檢測儀之笨重、昂貴、體積大、無法隨身攜帶等問題。
於本論文中將提出兩大研究主題:可撓式彎曲光柵與矽基超寬頻光偵測技術,首先以半導體製程技術發展成熟之矽基閃耀式光柵,並結合有機塑膠基板之轉印技術,將光柵結構完整轉印至塑膠基板上,此光柵不僅具備高可靠度之可撓性更同時擁有高效率之分光效果,同時具備分光與聚光之功能。另一則是以金屬半導體界面發展之蕭特基二極體光偵測元件,並透過金屬材料選擇、元件製程改善與元件偏壓操作之方式,成功製作出電性表現穩定且可應用於偵測1550奈米光通訊波段之光偵測元件。最後本研究將此光偵測元件導入局域表面電漿共振結構,全面提升元件之光電響應表現與拓寬元件偵測截止波長,於本論文中更設計出擁有超寬頻局域表面電漿共振之結構,成功突破以往局域表面電漿共振僅能窄頻誘發電漿子共振之限制。 本論文已成功研發出成熟且可靠之可撓式彎曲光柵、矽基超寬頻光偵測元件與其製程技術,並實際將此可撓式彎曲光柵應用於OPO可調頻雷射之分光光路中,於元件量測中,此光偵測元件已可應用於量測各種入射光強度與量測300 ~ 2700奈米之入射光訊號,此二成熟關鍵技術將為後續發展之可攜式氣體偵測器奠定良好研究基礎。不僅如此,本研究發展之超寬頻局域表面電漿結構將有極大潛力發展成下一世代之研究主軸題目。 | zh_TW |
dc.description.abstract | With the increasingly vigorous development of industrial technology, human life is full of various contaminants, such as pesticides, air pollution, food additives and drugs. Therefore, it become a necessary issue to develop a detection device which is immediate, portable and highly reliable. In this thesis, we demonstrate a concept on how to develop a miniature smart spectrometers based on nano-micro semiconductor technologies and infrared (IR) detection techniques for a smart device which is user-friendly, low-cost, light-weight and portable.
Here two main research subjects are studied; bendable grating and Si-based ultra-broadband detection technology. First, we develop a Si-based blazed grating by standard semiconductor process. Such a Si-based grating is used to collocate PDMS imprinting process to fabricate a PDMS-based bendable grating. This grating is equipped with the ability of reliable bending performance and high splitting efficiency. The other study is Schottky photodetector. With the metal selection, fabrication process and measurement mothed, we successfully produce a photodetector with stable IV-performance and be used to detect 1550 nm laser signal. Finally, this research combines the Schottky photodetector and localized surface plasmon resonance structure to form very broadband IR detectors. We can totally enhance the photo-responsivity and broaden the detection cutoff frequency of this Si-based Schottky photodetector. Furthermore, we design a structure which can induce a broadband LSPR in spectrum region. It overcomes the limit of traditional LSPR that only excites plasmon resonance in a narrow bandwidth. In summary, reliable bendable gratings and extremely broadband detection photodiodes are successfully developed. The bendable grating has been applied in splitting OPO tunable laser light. The broadband photodetector has been applied to detect 300 ~ 2700 nm spectrum region. These two critical techniques will lay a great groundwork for the future development of smart portable spectrum. Furthermore, the broadband LSPR structure in this research exhibits great potential for IR-detection in the next generation. | en |
dc.description.provenance | Made available in DSpace on 2021-07-11T14:36:39Z (GMT). No. of bitstreams: 1 ntu-106-R04941061-1.pdf: 7447633 bytes, checksum: 00f7327658fd7794c632e3f64f00a1e5 (MD5) Previous issue date: 2017 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 I 摘要 II ABSTRACT III 目次 IV 圖目錄 VII 表目錄 XII 第一章 緒論 1 1.1 研究背景 1 1.2 研究動機 3 1.3 論文大綱 7 第二章 理論基礎與文獻回顧 8 2.1 光柵 8 2.1.1 繞射光柵 8 2.1.2 閃耀式光柵 11 2.2 蕭特基能障二極體 13 2.2.1 金屬-半導體接面 13 2.2.2 半導體能隙吸收機制 (MBA) 17 2.2.3 內部光激發吸收機制 (IPA) 18 2.3 局域表面電漿共振 (LSPR) 20 第三章 研究儀器與設備介紹 26 3.1 熱蒸鍍系統 26 3.2 電子束蒸鍍系統 27 3.3 電漿增強化學氣相沉積儀 28 3.4 黃光微影系統 29 3.5 反應式離子蝕刻 30 3.6 光譜分析儀 31 第四章 可撓式光柵製作與應用量測 32 4.1 實驗動機 32 4.2 濕式蝕刻製程介紹 33 4.2.1 HNA等向性蝕刻 33 4.2.2 氫氧化鉀非等向性蝕刻 34 4.3 光柵製作與製程優化 37 4.3.1 矽基閃耀式光柵製程介紹 37 4.3.2 黃光微影製程良率優化 40 4.3.3 KOH濕式蝕刻製程良率優化 44 4.4 光柵轉印 48 4.4.1 HNA薄型矽基可撓式彎曲光柵之缺點 48 4.4.2 電鍍銅轉印法 50 4.4.3 PDMS轉印法 54 4.5 結論 61 第五章 P型矽蕭特基能障二極體 62 5.1 實驗動機 62 5.2 金屬電極材料選擇與蕭特基能障估算 63 5.3 鉻/P型矽蕭特基能障二極體 64 5.3.1 元件結構與製備流程 64 5.3.2 元件量測與分析 65 5.4 銅/P型矽蕭特基能障二極體 71 5.4.1 元件結構與製程優化 71 5.4.2 元件量測與分析 72 5.5 結論 83 第六章 超寬頻表面電漿共振蕭特基二極體紅外光偵測元件 84 6.1 實驗動機 84 6.2 元件製作與製程優化 85 6.2.1 IPAN結構與元件製作流程 85 6.2.2 IPAN結構蝕刻參數優化 87 6.3 IPAN結構表面電漿共振模擬 91 6.3.1 銅/p型矽蕭特基IPAN元件之LSPR模擬 92 6.3.2 金/p型IPAN結構與銀/p型IPAN結構之LSPR模擬 96 6.3.3 金/銅/p型矽蕭特基IPAN元件之LSPR模擬 99 6.4 IPAN元件光性與電性量測 100 6.4.1 各種元件之穿透反射與吸收頻譜 100 6.4.2 IPAN元件光電響應量測結果與分析 103 6.5 結論 109 第七章 結論與未來展望 110 7.1 結論 110 7.2 未來展望 113 參考文獻 114 著作列表 123 | |
dc.language.iso | zh-TW | |
dc.title | 矽基紅外光譜偵測關鍵技術之研究 | zh_TW |
dc.title | The Investigation of Si-based Infrared Spectrum Detection
Critical Techniques | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 李嗣涔(Si-Chen Lee),任貽均(Yi-Jun Jen),伍茂仁(Mount-Learn Wu) | |
dc.subject.keyword | 閃耀式光柵,可撓式彎曲光柵,矽基光偵測器,紅外光,矽基蕭特基二極體,局域表面電漿共振,超寬頻局域表面電漿共振, | zh_TW |
dc.subject.keyword | blazed grating,bendable grating,infrared,Si-based photodetector,Si-based Schottky diode,localized surface plasmon resonance,extremely broadband LSPR, | en |
dc.relation.page | 123 | |
dc.identifier.doi | 10.6342/NTU201702964 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2017-08-16 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-106-R04941061-1.pdf 目前未授權公開取用 | 7.27 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。