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標題: | 以矽製程技術製作高解析度晶片型光譜儀 Fabrication of Chip Spectrometer with Ultrahigh Resolution through Silicon Technology |
作者: | Cheng-Chun Chang 張政群 |
指導教授: | 林清富(Ching-Fuh Lin) |
關鍵字: | 晶片型光譜儀,有限時域差分法,二氧化碳,環形共振器,帶狀波導, Chip spectrometer,Finite-difference time domain method,Carbon dioxide,Micro-ring resonator,Strip waveguide, |
出版年 : | 2017 |
學位: | 碩士 |
摘要: | 近年來,隨著工業科技的蓬勃發展以及人類生活型態的改變,越來越多環境汙染與人體健康問題逐漸衍生。但現今對於未知物質的檢測技術,尚沒有一種相對便宜且有效率的檢測技術存在。因此,本研究致力於使用光譜學的概念,並結合現今已非常成熟之矽半導體奈微米製程技術,開發一高解析度之微型化晶片型光譜儀,使每個人都可藉由此裝置,達到隨時隨地自行進行立即性之物質檢測。
本論文主要包含三個部分。第一部分,利用有限時域差分法的模擬計算方式,進行本研究所提出之晶片型光譜儀於特定操作波段下之結構尺寸、工作規格及整體結構布局的模擬。並綜合模擬結果,完成一操作波長為1590nm ~ 1610nm且光譜解析度可達1nm之晶片型光譜儀的設計,透過此晶片將能以二氧化碳1600nm之紅外吸收特徵,進行二氧化碳氣體之檢測。第二部分,實際以矽半導體製程技術,於絕緣層覆矽基板上用ZEP-520A/LOR雙層光阻的製程方法進行結構的製作。利用下層LOR光阻形成之咬邊結構,來解決製程中硬遮罩與光阻接觸的情形,同時也進一步降低結構側壁粗糙嚴重之問題。另外,也透過改變蝕刻氣體與修改曝光圖形的方式,成功製作出與原始設計結構高度與寬度分別為220nm和500nm相符合之帶狀波導與環形共振腔。第三部分,則經由研磨拋光的後處理大幅提升試片端面之平整度,提供以端面耦合方式進行量測時,有更好的耦光效率。另一方面,也完成環形共振腔其光學特性測量系統之建構,經量測分析得半徑為4.47μm之環形共振腔其自由頻譜範圍為22nm,且最高品質因子可達7649。以上,完整地建立一套從最初之構想設計到結構的製作及終端試片的處理與光學特性量測分析一系列標準流程,以此作為未來開發其它操作波段之晶片型光譜儀參考之用。 Due to the industry boom and the lifestyle change in recent years, environmental and health issues have been increasingly concerned. However, there are no comparatively cheap and efficient techniques for detecting unknown substances so far. Therefore, this thesis focuses on adopting the concept of spectroscopy and combining the silicon semiconductor manufacturing process to develop a chip spectrometer with ultrahigh resolution. Through this device, it is expected that everyone can easily detect materials immediately. This study consists of three parts. First, the finite-difference time-domain (FDTD) method is used to simulate the structure size, working specification, and overall structure layout of the chip spectrometer under specific operating waveband. From the simulation results, a chip spectrometer with the operating wavelength range between 1590 nm and 1610 nm and the spectral resolution of 1 nm has been designed. Through this chip, CO2 gas detection can be carried out in the infrared (IR) absorption feature of 1600 nm wavelength. Second, the fabrication of structure on the silicon-on-insulator (SOI) substrates applies ZEP-520A/LOR bi-layer photoresist process. With the undercut structure formed by LOR, the problem of hard mask and photoresist contact can be solved. Moreover, a large amount of sidewall roughness of the structure is reduced. Under proper conditions, the strip waveguide and micro-ring resonator with height and width of 220 nm and 500 nm, respectively, are successfully fabricated. Finally, after grinding and polishing, the smoothness of the end face of the sample is greatly improved, so the coupling efficiency is enhanced for the measurement using the end-butt coupling method. Furthermore, a micro-ring resonator characteristics measurement system is also established for measuring the free spectral range (FSR) and quality factor (Q-factor). The results show that the FSR and Q-factor of a micro-ring resonator with radius 4.47 μm are 22 nm and 7649, respectively. Hence, through the above methodology, the fabrication and measurement for a chip spectrometer is established. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77877 |
DOI: | 10.6342/NTU201701177 |
全文授權: | 有償授權 |
顯示於系所單位: | 光電工程學研究所 |
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