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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄(Chieh-Hsiung Kuan) | |
dc.contributor.author | Jheng-Yan Liu | en |
dc.contributor.author | 劉正硯 | zh_TW |
dc.date.accessioned | 2021-07-10T22:18:01Z | - |
dc.date.available | 2021-07-10T22:18:01Z | - |
dc.date.copyright | 2017-08-31 | |
dc.date.issued | 2017 | |
dc.date.submitted | 2017-08-10 | |
dc.identifier.citation | Book
[1] S. J. Pearton, GaN and Related MaterialⅡ, CRC Press, 1997. [2] H. Morkoç, Nitride Semiconductors and Devices, Springer, 1999. Conference Paper [3] V. C. Su, P. H. Chen, M. L. Lee, Y. H. You, C. J. Hsieh, C. H. Kuan, Y. C. Chen, H. C. Lin, H. B. Yang, R. M. Lin, Q. Y. Lee, and F. C. Chu, “Investigation of nano-sized hole/post patterned sapphire substrates-induced strain-related quantum-confined stark effect of InGaN-based light-emitting diodes,” in CLEO: 2013, OSA Technical Digest (online), paper JW2A.84. [4] P. H. Chen, V. C. Su, Y. H. You, M. L. Lee, C. J. Hsieh, C. H. Kuan, H. M. Chen, H. B. Yang, H. C. Lin, R. M. Lin, F. C. Chu, and G. Y. Su, “The analysis of nano-patterned sapphire substrates-induced compressive strain to enhance quantum-confined stark effect of InGaN-based light-emitting diodes,” in CLEO: 2013, OSA Technical Digest (online), paper CM4F.8. [5] M. L. Lee, Y. H. You, R. M. Lin, C. J. Hsieh, V. C. Su, P. H. Chen, and C. H. Kuan, “Utilizing two dimensional photonic crystals to study the relation between the air duty cycle and the light extraction efficiency of InGaN-based Light-Emitting Diodes,” in IEEE Nanotechnology Conference, pp. 254-257, 2013. Journal Articles [6] S. Nakamura, M. Senoh, N. Iwasa, and S. I. Nagahama, “High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures,” Jpn. J. Appl. Phys., vol. 34, pp. L797–L799, Jul. 1995. [7] B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, “Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films,” Appl. Phys. Lett., vol. 68, pp. 643-645, 1996. [8] Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors”, Physica, vol. 34, pp. 149-154, 1967. [9] Y. H. You, V. C. Su, T. E. Ho, B. W. Lin, M. L. Lee, A. Das, W. C. Hsu, C. H. Kuan, and R. M. Lin, “Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs” Nanoscale Res. Lett., vol. 9, no. 1, pp. 1-8, 2014. [10] V. C. Su, P. H. Chen, R. M. Lin, M. L. Lee, Y. H. You, C. I. Ho, Y. C. Chen, W. F. Chen, and C. H. Kuan, “Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates,” Optics Express, vol. 21, pp. 30065-30073, 2013. [11] J. J. Chen, Y. K. Su, C. L. Lin, S. M. Chen, W. L. Li, C.C. Kao, 'Enhanced Output Power of GaN-Based LEDs With Nano-Patterned Sapphire Substrates,' Photo. Tech. Lett., IEEE , vol. 20, no. 13, pp. 1193-1195, Jul. 2008. [12] H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, G. Wang, “Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching,” Solid-State Electronics, vol. 52, no. 6, pp. 962-967, Jun. 2008. [13] R. H. Horng, W. K. Wang, S. C. Huang, S. Y. Huang, S. H. Lin, C. F. Lin, D. S. Wuu, ”Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates,” Journal of crystal growth, vol. 298, pp. 219-222, Jan. 2007. [14] H. Y. Shin, S. K. Kwon, Y. I. Chang, M. J. Cho, K. H. Park, ”Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate,” Journal of Crystal Growth, vol. 311, pp. 4167–4170, Aug. 2009. [15] Z. H. Feng, Y. D. Qi, Z. D. Lu, and K. M. Lau, ”GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy,” Journal of Crystal Growth, vol. 272, pp.327–332, Dec. 2004. [16] A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, R. C. Gonzalez, R. E. Woods, “Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak,” Appl. Phys. Lett., vol. 85, no. 22, pp. 5143, Dec. 2004. [17] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 85, no. 6, pp. 3222-3233, Mar. 1999. [18] O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann,“Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 87, no. 1, pp. 334-344, Jan. 2000. [19] D. G. Zhao, S. J. Xu, M. H. Xie, S. Y. Tong, and H. Yang, “Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire,” Appl. Phys. Lett., vol. 83, no. 4, pp. 677-679, 2003. [20] C. C. Wang, H. Ku, C. C. Liu, K. K. Chong, C. I. Hung, Y. H. Wang, and M. P. Houng, “Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure,” Appl. Phys. Lett., vol. 91, pp. 121109, Sep. 2007. [21] L. Lu, Z. Y. Gao, B. Shen, F. J. Xu, S. Huang, Z. L. Miao, Y. Hao, Z. J. Yang,G. Y.Zhang, X. P. Zhang, J. Xu, and D. P. Yu, “Microstructure and origin of dislocation etch pits in GaN epilayers grownby metal organic chemical vapor deposition,” Journal of Applied Physics 104, 123525 (2008) [22] K. Hiramatsu K. Nishiyama, A. Motogaito , H. Miyake Y. Iyechika , and T. Maeda “ Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides:Effects of Reactor Pressure in MOVPE Growth,” phys. stat. sol. (a) 176, 535 (1999) [23] H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, “Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale,” J. Appl. Phys., vol. 103, no. 1, pp. 014314, Jan. 2008. [24] B. Van Daele and G. Van TendelooW. Ruythooren, J. Derluyn, M. R. Leys, and M. Germain, “the role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN,” Appl. Phys. Lett. 87, 061905 (2005). Web. [25] http://hwtc.com.tw/images/tech/img003.jpg [26] http://gsmat10002.weebly.com/uploads/8/7/7/6/8776764/1297967_orig.jpg | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77723 | - |
dc.description.abstract | 在此篇論文中,我們應用了電子束實驗室之複合型圖案化藍寶石基板(multi-patterned sapphire substrates)之技術,一方面藉由改變圖案參數,來減少氮化鎵薄膜之穿隧差排密度(threading dislocation density)與缺陷密度(defect density)。另一方面,藉由不同缺陷密度的試片,以針對蕭特基二極體電性表現的影響加以探討。
在最後階段,我們將無結構之試片與複合型圖案之試片做一比較,可知我們利用此技術將缺陷密度降低一個數量級後,其蕭特基能障高提升約0.2eV、崩潰電壓提升約40V。 | zh_TW |
dc.description.abstract | In this thesis, we apply the technology of multi-patterned sapphire substrate to reduce defect density. By using different period pattern, we got different test chip with different defect density. Then we analysis the relationship between defect density and electrical properties.
In the final stage, we compare the region w/o patterned substrate and the region with patterned substrate. Then we found that: when we reduce defect density about one order by this tech, the schottky barrier height and breakdown voltage will be promote about 0.2eV、40V respectively. | en |
dc.description.provenance | Made available in DSpace on 2021-07-10T22:18:01Z (GMT). No. of bitstreams: 1 ntu-106-R04941007-1.pdf: 2803193 bytes, checksum: 4a4aa501d386d3f8790d4ff48f537529 (MD5) Previous issue date: 2017 | en |
dc.description.tableofcontents | 致謝 1
中文摘要 2 ABSTRACT 3 目錄 4 圖目錄 7 表目錄 9 一、 緒論 10 1.1 前言 10 1.2 動機 11 1.3 論文架構 11 二、 理論基礎與材料分析 12 2.1 藍寶石基板簡介 12 2.2 氮化鎵類磊晶層簡介 15 2.2.1 氮化鎵晶體結構 15 2.2.2 氮化鎵薄膜應力來源 16 2.2.3 拉曼光譜的應用 18 2.2.4 氮化鎵之極化效應 18 2.3 藍寶石基板蝕刻原理 19 2.3.1 蝕刻種類 19 2.3.2 濕式蝕刻原理 20 2.4 金屬與半導體接觸 22 2.4.1 能帶關係 22 2.4.2 蕭特基接觸傳輸機制 23 三、 實驗儀器與樣品製備 24 3.1 實驗儀器簡介 24 3.1.1 微影技術與電子束微影系統(E-Beam Lithography) 24 3.1.2 電子槍蒸鍍系統(E-Gun) 25 3.1.3 反應離子蝕刻(RIE) 26 3.1.4 掃描式電子顯微鏡(SEM) 26 3.1.5 有機金屬化學氣相沉積(MOCVD) 28 3.1.6微拉曼光譜量測系統(µ-Raman) 29 3.1.7 Etching pit density(EPD) 30 3.1.8霍爾量測 32 3.2 樣品製備 34 3.2.1圖案化藍寶石基板之製作 34 3.2.2氮化鎵之成長 38 3.2.3蕭特基二極體之製作 39 四、 實驗結果與分析 42 4.1 實驗設計 42 4.1.1 濕式蝕刻基板設計 42 4.1.2 濕式蝕刻樣品製備 43 4.2 歐姆接觸優化測試 44 4.2.1 原生氧化層處理 44 4.2.2 快速熱退火測試 46 4.3 量測分析(第一部份):周期相關性 46 4.4 量測分析(第二部分):深度相關性 48 4.5 量測分析(第三部份):電性 52 4.6 討論和成果 53 五、 結論 55 參考資料 56 | |
dc.language.iso | zh-TW | |
dc.title | 複合型圖案化藍寶石基板之高性能氮化鎵類蕭特基二極體 | zh_TW |
dc.title | High performance GaN-based schottky diodes with multi-patterned sapphire substrates | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 吳肇欣(Chao-Hsin Wu),徐大正(Ta-Cheng Hsu),孫建文(Jian-Wen Sun),林瑞民(Rui-Ming Lin) | |
dc.subject.keyword | 氮化鎵,複合型圖案化藍寶石基板,濕式蝕刻,電子束微影,蕭特基二極體, | zh_TW |
dc.subject.keyword | GaN,Multi-patterned Sapphire Substrates,Wet-Etching,Electron-Beam Lithography,Schottky diode, | en |
dc.relation.page | 59 | |
dc.identifier.doi | 10.6342/NTU201702688 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2017-08-10 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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