反轉對稱外爾半金屬之電子傳輸特性

Abstract

本論文建構外爾半金屬層狀結構的外爾費米子傳播行為模型，推導出電子在有限層數結構內的穿透率、電流、電導等公式，接著探討外爾半金屬中不同手徵粒子受電位障與磁位障的影響，最後深入討論不同的位障以及改變位障強度、寬度、結構週期數及排列方式對電子傳輸的影響，明顯看到施予電壓位障並不會使克萊恩穿隧通道消失，且穿透率能帶和電子入射角始終對稱，而鐵磁性材料所引起的磁位障則會關閉正向入射通道，禁帶的出現使得某些能量下的電子無法穿透，且藉由調控各項參數可使結構出現顯著的波向量濾波行為，以及解決實現相對論性材料電子元件的難題克萊恩穿隧，因此對於實現以外爾半金屬為基礎的原件提供了簡單的構想。

In this thesis, the propagation behavior model of Weyl fermion of layered structure on the Weyl semimetal is constructed. The transmission, current, conductance of the finite layered structure are calculated. Then, the influence of potential barrier and magnetic barrier on different chiral particle is investigated. Finally, the influence of different potential barrier on the Weyl semimetal and the barrier strength, width, the period of structural and the arrangement for the electron transport are deeply investigated. It is obvious that the application of the voltage barrier does not cause the Klein tunneling to disappear. Besides, the transmission spectra and the angle of incidence are always symmetrical. Magnetic barrier arising from ferromagnetic material will cause normally incident channel to close. In addition, a forbidden band to make electron unable to transmit completely in some energy region is presented. By adjust different structure parameter, system will show strong wave vector filtering behavior, which can solve the biggest problem between implementation of the relativistic material base electronic devices.