製程參數對水平奈米碳管之結構影響

Abstract

本論文主要是透過化學氣相沉積法在石英基板上成長出水平奈米碳管陣列，并藉由改變成長水平奈米碳管製程所需要的製程參數，找到最適合成長出水平奈米碳管的參數。首先，使用高溫爐管將石英基板表面進行退火製程，接著透過曝光顯影製程以及電子束蒸鍍系統，在石英基板表面上蒸鍍一層鐵催化劑薄膜，再使用真空高溫爐管系統嘗試在石英基板上成長出水平奈米碳管陣列。最後利用掃描式電子顯微鏡以及拉曼光譜測量系統對於水平奈米碳管進行觀察與量測。 本論文主要觀察到成長水平奈米碳管的製程參數對於水平奈米碳管的影響:(1)使用適當的鐵催化劑薄膜厚度才能夠在石英基板上成長出水平奈米碳管。(2)成長水平奈米碳管的溫度過高與過低都會影響到奈米碳管的生長。(3)成長碳源流量、成長時間以及試片擺放位置影響到是水平奈米碳管陣列的密度。 最後本論文在分析以上的製程參數對於水平奈米碳管影響後，成功的研究出一套屬於本論文的水平奈米碳管製程，如果以後的成長製程有出現偏差，可以藉由這些製程參數分析找到如何改善製程，擁有這套製程便能夠滿足未來實驗室繼續研究奈米碳管場效電晶體的條件。

This thesis focuses on growing horizontal carbon nanotube arrays on a quartz substrate by chemical vapor deposition, we found the most suitable parameters for the growth of horizontal carbon nanotubes by changing the process parameters. First of all, using a high-temperature furnace to anneal the surface of the quartz substrate. Then by using the process of exposure development and electron beam evaporation system, evaporating a layer of iron catalyst film on the quartz base plate, afterwards, using the vacuum high-temperature furnace tube system, attempting to grow up horizontal carbon nanotube array on the quartz substrate. Finally, using scanning electron microscope and Raman spectrograph system to observe and measure the horizontal carbon nanotube. In this paper, the effects of the production process parameters of the horizontal carbon nanotube were observed: (1) Only if we use the proper iron catalyst film thickness will the horizontal carbon nanotube grow on the quartz substrate. (2) The growth of the carbon nanotube will be affected in the condition that the temperature of the manufacturing process is too high or low. (3) The density of the horizontal carbon nanotube is controlled by the parameters including the carbon growing flux, the growing time and the position of the specimen. After this paper carries out the analysis of the manufacturing process parameters effects on the horizontal carbon nanotube, we successfully develop a set of horizontal carbon nanotube manufacturing procedures belonging to this paper. If there is any problem caused in the follow-up growth manufacturing process, then we can improve the manufacturing process by the analysis of the manufacturing process parameters. Owning this set of manufacturing processes can make the laboratory be able to research carbon nanotube field-effect transistors in future.