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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/76992完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 廖洺漢(Ming-Han Liao) | |
| dc.contributor.author | Tzu-Hsien Chan | en |
| dc.contributor.author | 詹子賢 | zh_TW |
| dc.date.accessioned | 2021-07-10T21:42:43Z | - |
| dc.date.available | 2021-07-10T21:42:43Z | - |
| dc.date.copyright | 2020-08-07 | |
| dc.date.issued | 2020 | |
| dc.date.submitted | 2020-07-30 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/76992 | - |
| dc.description.abstract | 本論文主要是透過化學氣相沉積法在石英基板上成長出水平奈米碳管陣列，并藉由改變成長水平奈米碳管製程所需要的製程參數，找到最適合成長出水平奈米碳管的參數。首先，使用高溫爐管將石英基板表面進行退火製程，接著透過曝光顯影製程以及電子束蒸鍍系統，在石英基板表面上蒸鍍一層鐵催化劑薄膜，再使用真空高溫爐管系統嘗試在石英基板上成長出水平奈米碳管陣列。最後利用掃描式電子顯微鏡以及拉曼光譜測量系統對於水平奈米碳管進行觀察與量測。
本論文主要觀察到成長水平奈米碳管的製程參數對於水平奈米碳管的影響:(1)使用適當的鐵催化劑薄膜厚度才能夠在石英基板上成長出水平奈米碳管。(2)成長水平奈米碳管的溫度過高與過低都會影響到奈米碳管的生長。(3)成長碳源流量、成長時間以及試片擺放位置影響到是水平奈米碳管陣列的密度。 最後本論文在分析以上的製程參數對於水平奈米碳管影響後，成功的研究出一套屬於本論文的水平奈米碳管製程，如果以後的成長製程有出現偏差，可以藉由這些製程參數分析找到如何改善製程，擁有這套製程便能夠滿足未來實驗室繼續研究奈米碳管場效電晶體的條件。 | zh_TW |
| dc.description.abstract | This thesis focuses on growing horizontal carbon nanotube arrays on a quartz substrate by chemical vapor deposition, we found the most suitable parameters for the growth of horizontal carbon nanotubes by changing the process parameters. First of all, using a high-temperature furnace to anneal the surface of the quartz substrate. Then by using the process of exposure development and electron beam evaporation system, evaporating a layer of iron catalyst film on the quartz base plate, afterwards, using the vacuum high-temperature furnace tube system, attempting to grow up horizontal carbon nanotube array on the quartz substrate. Finally, using scanning electron microscope and Raman spectrograph system to observe and measure the horizontal carbon nanotube.
In this paper, the effects of the production process parameters of the horizontal carbon nanotube were observed: (1) Only if we use the proper iron catalyst film thickness will the horizontal carbon nanotube grow on the quartz substrate. (2) The growth of the carbon nanotube will be affected in the condition that the temperature of the manufacturing process is too high or low. (3) The density of the horizontal carbon nanotube is controlled by the parameters including the carbon growing flux, the growing time and the position of the specimen. After this paper carries out the analysis of the manufacturing process parameters effects on the horizontal carbon nanotube, we successfully develop a set of horizontal carbon nanotube manufacturing procedures belonging to this paper. If there is any problem caused in the follow-up growth manufacturing process, then we can improve the manufacturing process by the analysis of the manufacturing process parameters. Owning this set of manufacturing processes can make the laboratory be able to research carbon nanotube field-effect transistors in future. | en |
| dc.description.provenance | Made available in DSpace on 2021-07-10T21:42:43Z (GMT). No. of bitstreams: 1 U0001-2807202023223900.pdf: 4704978 bytes, checksum: 6a7ac1c4d67400aa702c1d05e2a59c9e (MD5) Previous issue date: 2020 | en |
| dc.description.tableofcontents | 口試委員審定書 i 致謝 ii 中文摘要 iii ABSTRACT iv 目錄 v 圖目錄 vii 表目錄 ix 第一章 緒論 1 1.1 前言 1 1.2 研究背景與動機 2 1.3 論文架構 4 第二章 文獻回顧與理論基礎 6 2.1 奈米碳管 6 2.2 奈米碳管的製程 7 2.3 水平奈米碳管 11 2.4 水平奈米碳管製程 12 2.5 國際發展 15 第三章 實驗設備與原理 19 3.1 曝光機 20 3.2 電子束蒸鍍系統 21 3.3 真空高溫爐管系統 22 3.4 場發射掃描電子顯微鏡 23 3.5 拉曼光譜測量系統 24 第四章 實驗流程與製程 26 4.1 實驗流程設計 26 4.2 基板清洗 26 4.3 石英基板退火處理 28 4.4 光阻塗佈 29 4.5 曝光與顯影 31 4.6 鐵催化劑鍍膜 33 4.7 鐵薄膜鍛燒 35 4.8 成長水平奈米碳管 38 第五章 實驗結果與討論 41 5.1 鐵薄膜 41 5.2 成長溫度 44 5.3 成長碳源流量 45 5.4 成長時間 48 5.5 擺放位置 50 5.6 結論 52 第六章 總結與未來研究方向 54 參考文獻 56 | |
| dc.language.iso | zh-TW | |
| dc.subject | 水平奈米碳管 | zh_TW |
| dc.subject | 石英基板 | zh_TW |
| dc.subject | 低鍍率蒸鍍技術 | zh_TW |
| dc.subject | 鐵薄膜 | zh_TW |
| dc.subject | 化學氣相沉積法 | zh_TW |
| dc.subject | quartz substrate | en |
| dc.subject | chemical vapor deposition | en |
| dc.subject | iron film | en |
| dc.subject | low evaporation rate evaporation deposition technology | en |
| dc.subject | horizontal carbon nanotube | en |
| dc.title | 製程參數對水平奈米碳管之結構影響 | zh_TW |
| dc.title | Effects of Fabrication Parameters on the Structure of Horizontal Carbon Nanotube | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 108-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 李敏鴻(Min-Hung Lee),劉建豪(Chien-Hao Liu) | |
| dc.subject.keyword | 石英基板,低鍍率蒸鍍技術,鐵薄膜,化學氣相沉積法,水平奈米碳管, | zh_TW |
| dc.subject.keyword | quartz substrate,low evaporation rate evaporation deposition technology,iron film,chemical vapor deposition,horizontal carbon nanotube, | en |
| dc.relation.page | 62 | |
| dc.identifier.doi | 10.6342/NTU202002005 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2020-07-30 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
| 顯示於系所單位： | 機械工程學系 | |
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