1310奈米長波長垂直共振腔面射型雷射製程開發與分析

Abstract

本論文探討1310奈米長波長垂直共振腔面射型雷射的開發製作，包含磊晶結構設計、製程開發以及直流電性量測分析，特別是針對上部布拉格反射鏡的製作。論文內容包含磊晶結構設計、反射率模擬分析、InP蝕刻測試、上部反射鏡製作開發、光罩設計與製作流程步驟和光電直流特性量測。 首先，對於現今光電通訊傳輸做個介紹，並探討面射型雷射與邊射型雷射的差異，以及長波長與短波長面射型雷射的優點及應用範圍，最後提出本研究計畫的想法、設計與優點。 接著，會介紹磊晶結構設計及利用軟體模擬其磊晶特性(反射率、電場分布)，並介紹InP的蝕刻特性以及上部半導體/空氣反射鏡製作開發，包含N型平台蝕刻測試、離子佈植選擇比差異蝕刻測試、材料嵌入後蝕刻測試。 當我們成功測試出製作方法後，接著以製程經驗去設計每一道光罩，並且說明製程裡變因的設計—侷限孔徑，如何控制侷限深度的蝕刻以及實際上製程流程步驟說明，製作半導體/空氣結構上部布拉格反射鏡的垂直共振腔面射型雷射並討論直流電性量測，分析不同侷限孔徑下光強與電流曲線的結果，以及上部反射鏡蝕刻前後的差異之處。 我們同時也有改變上部布拉格反射鏡的做法，試著利用外部沉積介電質做為新的反射鏡，說明如何設計介電質反射鏡來匹配共振腔的條件，以及實際元件製程流程步驟，一樣分析不同侷限孔徑下光強與電流曲線以及沉積介電質反射鏡前後的結果。 最後，為整篇論文的總結並對於未來進一步改善的方向說明。

In this thesis, we focus on the development of long-wavelength vertical cavity surface-emitting lasers(VCSELs), including epitaxial structure design, process development and DC measurement analysis, especially the fabrication of top bragg reflectors. The content of the paper includes epitaxial structure design, reflectance simulation analysis, InP etching test, development of top DBR, mask design and fabrication process steps and photoelectric DC characteristic measurement. First, we introduce the current optical communication transmission, and discusses the difference between the surface-emitting laser and the edge-emitting laser, as well as the advantages and applications of long- wavelength and short-wavelength lasers. Finally, the idea, design and advantages of the project are proposed. Following, we introduce the epitaxial structure design and simulate its epitaxial properties (reflectivity, electric field distribution), and illustrates the etching characteristics of InP and the development of the upper semiconductor/air mirror, including N-shape mesa etching test, ion implant test and the material embedded etch test. After we get the approach form test, we design every mask form out experiences. And then we introduce the design of the variation in the process - the aperture, how to control depth in etch process. The actual process flow steps are also illustrated, and the DC current measurement is discussed. The results of the light output power and current curves under different confinement apertures are analyzed, and The difference between the upper mirror before and after etching. In this research, we also change the approaches of top DBR. Depositing dielectric as a new mirror and illustrate how to design a dielectric DBR to match the resonant cavity. Actual component process steps are also modified. The output power and current curves at the confined aperture and the results before and after deposition of the dielectric mirror. Final, there is summary of the whole paper and a description of the direction for further improvement in the future.