應用於5G行動通訊之互補式金氧半功率放大器設計

Abstract

本論文呈現一顆以28奈米低功耗互補式金屬氧化物半導體製程製作的功率放大器。 此功率放大器設計在28 GHz，連續正弦波量測結果顯示，隨著不同偏壓條件，小訊號增益為21.8-25.2 dB，大訊號飽和輸出功率為18.9-19.1 dBm，功率附加效率則皆高於35%。本功率放大器通過以下的訊號測試：64-QAM, 正交頻分多工的調變訊號,訊號之峰值對平均功率比值有9.5 dB。結果顯示本功率放大器在EVM為-25 dBc的條件下能有10 dBm的輸出功率，並有10.6%的功率附加效率。此外，在本論文的最終章呈現了最新的5G NR調變訊號測試結果。

In this thesis, a transformer-based class-AB power amplifier (PA) fabricated in 28-nm CMOS LP process is presented. The proposed PA is aimed at 28 GHz. The measured small-signal gain at 28 GHz is 21.8-25.2 dB, saturated power is 18.9-19.1 dBm, and maximum PAE achieves above 35%. Tested with 64-QAM OFDM/ 9.5-dB PAPR modulated signal, the proposed PA can achieve linear output power up to 10 dBm at EVM of -25 dBc and maintains a high PAE of 10.6%. In addition, tests for the state-of-the-art 5G NR signals are also presented in the last chapter.