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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/72434完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 黃天偉 | |
| dc.contributor.author | Tsung-Ching Tsai | en |
| dc.contributor.author | 蔡宗瑾 | zh_TW |
| dc.date.accessioned | 2021-06-17T06:42:23Z | - |
| dc.date.available | 2023-08-19 | |
| dc.date.copyright | 2018-08-19 | |
| dc.date.issued | 2018 | |
| dc.date.submitted | 2018-08-15 | |
| dc.identifier.citation | [1] 3GPP TS 38.214, v15.2.0, June 2018.
[2] B. Park et al., 'Highly Linear mm-Wave CMOS Power Amplifier,' IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 12, pp. 4535-4544, Dec. 2016. [3] S. Shakib, H. C. Park, J. Dunworth, V. Aparin and K. Entesari, 'A Highly Efficient and Linear Power Amplifier for 28-GHz 5G Phased Array Radios in 28-nm CMOS,' IEEE Journal of Solid-State Circuits, vol. 51, no. 12, pp. 3020-3036, Dec. 2016. [4] S. Shakib, M. Elkholy, J. Dunworth, V. Aparin and K. Entesari, '2.7 A wideband 28GHz power amplifier supporting 8×100MHz carrier aggregation for 5G in 40nm CMOS,' in 2017 IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, 2017, pp. 44-45. [5] Y. Zhang and P. Reynaert, 'A high-efficiency linear power amplifier for 28GHz mobile communications in 40nm CMOS,' in 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Honolulu, HI, 2017, pp. 33-36. [6] S. N. Ali, P. Agarwal, J. Baylon, S. Gopal, L. Renaud and D. Heo, 'A 28GHz 41%-PAE linear CMOS power amplifier using a transformer-based AM-PM distortion-correction technique for 5G phased arrays,' in 2018 IEEE International Solid - State Circuits Conference - (ISSCC), San Francisco, CA, 2018, pp. 406-408. [7] M. Vigilante and P. Reynaert, 'A Wideband Class-AB Power Amplifier With 29–57-GHz AM–PM Compensation in 0.9-V 28-nm Bulk CMOS,' IEEE Journal of Solid-State Circuits, vol. 53, no. 5, pp. 1288-1301, May 2018. [8] W. K. Chen, Fundamentals of Circuits and Filters, 3rd ed. USA: CRC Press, 2009. [9] I. Aoki, S. D. Kee, D. B. Rutledge and A. Hajimiri, 'Distributed active transformer-a new power-combining and impedance-transformation technique,' IEEE Transactions on Microwave Theory and Techniques, vol. 50, no. 1, pp. 316-331, Jan 2002. [10] I. Aoki, S. D. Kee, D. B. Rutledge and A. Hajimiri, 'Fully integrated CMOS power amplifier design using the distributed active-transformer architecture,' IEEE Journal of Solid-State Circuits, vol. 37, no. 3, pp. 371-383, Mar 2002. [11] C. Fager, J. C. Pedro, N. B. de Carvalho, H. Zirath, F. Fortes and M. J. Rosario, 'A comprehensive analysis of IMD behavior in RF CMOS power amplifiers,' IEEE Journal of Solid-State Circuits, vol. 39, no. 1, pp. 24-34, Jan. 2004. [12] S. Rangan, T. S. Rappaport and E. Erkip, 'Millimeter-Wave Cellular Wireless Networks: Potentials and Challenges,' in Proceedings of the IEEE, vol. 102, no. 3, pp. 366-385, March 2014. [13] W. L. Chan and J. R. Long, 'A 58–65 GHz Neutralized CMOS Power Amplifier With PAE Above 10% at 1-V Supply,' IEEE Journal of Solid-State Circuits, vol. 45, no. 3, pp. 554-564, March 2010. [14] D. Zhao, S. Kulkarni and P. Reynaert, 'A 60GHz outphasing transmitter in 40nm CMOS with 15.6-dBm output power,' in 2012 IEEE International Solid-State Circuits Conference, San Francisco, CA, 2012, pp. 170-172. [15] 3GPP TS 38.211, v15.2.0, June 2018. [16] 3GPP TS 38.214, v15.2.0, June 2018. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/72434 | - |
| dc.description.abstract | 本論文呈現一顆以28奈米低功耗互補式金屬氧化物半導體製程製作的功率放大器。
此功率放大器設計在28 GHz，連續正弦波量測結果顯示，隨著不同偏壓條件，小訊號增益為21.8-25.2 dB，大訊號飽和輸出功率為18.9-19.1 dBm，功率附加效率則皆高於35%。本功率放大器通過以下的訊號測試：64-QAM, 正交頻分多工的調變訊號,訊號之峰值對平均功率比值有9.5 dB。結果顯示本功率放大器在EVM為-25 dBc的條件下能有10 dBm的輸出功率，並有10.6%的功率附加效率。此外，在本論文的最終章呈現了最新的5G NR調變訊號測試結果。 | zh_TW |
| dc.description.abstract | In this thesis, a transformer-based class-AB power amplifier (PA) fabricated in 28-nm CMOS LP process is presented.
The proposed PA is aimed at 28 GHz. The measured small-signal gain at 28 GHz is 21.8-25.2 dB, saturated power is 18.9-19.1 dBm, and maximum PAE achieves above 35%. Tested with 64-QAM OFDM/ 9.5-dB PAPR modulated signal, the proposed PA can achieve linear output power up to 10 dBm at EVM of -25 dBc and maintains a high PAE of 10.6%. In addition, tests for the state-of-the-art 5G NR signals are also presented in the last chapter. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T06:42:23Z (GMT). No. of bitstreams: 1 ntu-107-R04942142-1.pdf: 14098143 bytes, checksum: 520f7342c0b991095b21fee7955cd6a7 (MD5) Previous issue date: 2018 | en |
| dc.description.tableofcontents | 誌謝 i
中文摘要 iv ABSTRACT v CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xxi Chapter 1 Introduction 1 1.1 Backgrounds and Motivations 1 1.2 Literature Survey 2 1.3 Thesis Organization 5 Chapter 2 Design of a 28-GHz Class-AB Transformer-Based Power Amplifier in CMOS 28-nm LP Process 6 2.1 Introduction 6 2.2 Key Passive Components 7 2.2.1 Integrated Inductors 7 2.2.2 Integrated Capacitor 9 2.3 Circuit Design 11 2.3.1 Basics of RF Transformer 11 2.3.2 Capacitive Neutralization Technique 17 2.3.3 Load-pull Simulation 19 2.3.4 Power Cell Layout Styles 20 2.4 Post-layout Simulation Results 22 2.4.1 S-parameter Simulation and Large Signal Simulation 22 2.4.2 Inter-stage Stability Check 23 2.5 Experimental Results 24 2.5.1 S-parameter Measurement Results 25 2.5.2 Large Signal Measurement Results 37 2.5.3 Third-Order Intermodulation (IMD3) Measurement Results 51 2.5.4 Wideband Digital Modulation Measurement Results 62 2.5.5 CW Experimental Results under Optimum Bias Conditions 69 Chapter 3 Wideband OFDM Modulated Signals for Power Amplifier Design 81 3.1 Custom OFDM Signals 81 3.2 5G NR Signals 91 Chapter 4 Conclusion 98 REFERENCE 101 | |
| dc.language.iso | en | |
| dc.subject | 功率放大器 | zh_TW |
| dc.subject | 變壓器耦合之功率放大器 | zh_TW |
| dc.subject | 推挽式功率放大器 | zh_TW |
| dc.subject | 峰值對平均功率比 | zh_TW |
| dc.subject | 毫米波 | zh_TW |
| dc.subject | 5G NR | zh_TW |
| dc.subject | power amplifier | en |
| dc.subject | transformer-based power amplifier | en |
| dc.subject | push-pull power amplifier | en |
| dc.subject | mm-wave | en |
| dc.subject | 5G NR | en |
| dc.subject | PAPR | en |
| dc.title | 應用於5G行動通訊之互補式金氧半功率放大器設計 | zh_TW |
| dc.title | Design and Research of CMOS Power Amplifier for 5G Communications | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 106-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 郭建男,盧信嘉,張鴻埜,蔡政翰 | |
| dc.subject.keyword | 功率放大器,變壓器耦合之功率放大器,推挽式功率放大器,峰值對平均功率比,毫米波,5G NR, | zh_TW |
| dc.subject.keyword | power amplifier,transformer-based power amplifier,push-pull power amplifier,PAPR,mm-wave,5G NR, | en |
| dc.relation.page | 103 | |
| dc.identifier.doi | 10.6342/NTU201803595 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2018-08-15 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
| 顯示於系所單位： | 電信工程學研究所 | |
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| ntu-107-1.pdf 未授權公開取用 | 13.77 MB | Adobe PDF |
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