請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/72067| 標題: | 高性能高分子於新穎場效應電晶體式記憶體之設計與製備 Design and Preparation of Novel Field-Effect Transistor Memory Based on High Performance Polymers |
| 作者: | Teng-Yung Huang 黃鐙養 |
| 指導教授: | 劉貴生(Guey-Sheng Liou) |
| 關鍵字: | 電晶體式記憶體,有機-無機混摻材料,聚集誘導發光混摻材料,光電晶體, transistor memory,organic-inorganic hybrid materials,AIE-active blending materials,phototransistor, |
| 出版年 : | 2018 |
| 學位: | 碩士 |
| 摘要: | 本論文分為四個章節,第一章為總體序論,簡述高性能高分子、有機-無機混摻材料、聚集誘導發光及高分子記憶體元件的應用及發展。第二章中,以芳香族聚醯亞胺PI(F-ODPA)和二氧化鈦/二氧化鋯之混摻為基底,並成功製備成駐極體層和記憶體元件,用來探討混摻不同無機金屬樣化物重量比所導致的不同電性特徵。越高重量比混摻的記憶體元件被預期會有更大的記憶窗大小。此外,混摻記憶體元件因為未使用300 奈米厚度之二氧化矽介電層而能用更低的操作電壓。第三章中,將具聚集誘導發光之小分子diOMe-TPA-CN 與高分子CN-PA 和CN-PI 以不同重量比進行混摻。首先,先對混摻薄膜的光物理性質進行探討。接著再針對其光電晶體的記憶體性質和光感測器性質進行探討。因在紫外光的照射下混摻薄膜能發出黃至橘的顏色,而能激發半導體層pentacene 產生許多激發光子進一步提升記憶窗大小。另外,此光電晶體元件具有多層電流狀態,故亦是可以被應用做為紫外光感測器的良好材料之一。第四章為結論。 This study has been separated into four chapters. Chapter 1 is general introduction of high performance polymer, organic-inorganic hybrid materials, aggregation-induced emission, and polymer memory. In chapter 2, aromatic polyimide PI(F-ODPA) hybridizing with different weight percent of titanium oxide/zirconium oxide have been successfully prepared as electret layers and made into devices for investigating the relationship between different weight percent of inorganic content and memory properties. The higher weight percent of the hybrid memory devices are expected to possess larger memory window. Besides, the hybrid memory devices are capable of using lower applied voltage compared with conventional memory devices due to the absence of 300 nm thick SiO2. In chapter 3, AIE-active small molecule diOMe-TPACN has been blended with two AIE-active polymers CN-PA and CN-PI using different weight percent. The photophysical properties of the blending films have been fully investigated. The blending materials are further prepared into phototransistor memory and photodetector devices, in which the charges induced by photo can be trapped and detrapped successfully. The luminescent polymer blending films emit intense yellow to orange emission when excites with ultraviolet (UV) light and serves as electret layers to trap charges injected from the pentacene semiconductor layer. The memory window of the obtained blending memory devices greatly enlarges under UV irradiation compared with that without UV assistant. Also, the phototransistors acquire multilevel drain current under different incident UV intensity and are perfect materials serving as a photodetector. Finally, chapter 4 is the total conclusion of the study. |
| URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/72067 |
| DOI: | 10.6342/NTU201704342 |
| 全文授權: | 有償授權 |
| 顯示於系所單位: | 高分子科學與工程學研究所 |
文件中的檔案:
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-107-1.pdf 未授權公開取用 | 7.48 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。
