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標題: | 利用有機分子摻雜石墨稀改良其接觸電阻 Improve Contact Resistance of Graphene with Organic Molecule doping |
作者: | Tian-Jing Jiang 江天靖 |
指導教授: | 吳育任(Yuh-Renn Wu) |
共同指導教授: | 吳志毅(Chih-I Wu) |
關鍵字: | 石墨烯,氣相吸附摻雜,電阻率,載子遷移率,接觸電阻, Graphene,Physisorption,Doping,Resistivity,Mobility,Contact Resistance, |
出版年 : | 2020 |
學位: | 碩士 |
摘要: | 本研究主要分文兩階段,第一部分為摻雜物對石墨烯的影響,我們透過光電子能譜對摻雜物做定性分析,從碳1s特徵峰的位移以及材料功函數改變中,了解摻雜物確實與石墨烯發生了載子交換,並改變了石墨烯的費米能階,以TEPA為N型摻雜物,Catechol為P型。接著,透過霍爾量測分析摻雜時間對石墨烯載子遷移率以及電阻率的變化,藉由德汝德公式可知載子濃度、載子遷移率對電阻率的相關性,了解載子遷移率及電阻率都隨摻雜時間增加而下降是透過載子濃度的補償。最後透過拉曼光譜以及電性狄拉克點的位移做定量分析。 第二部分將利用傳輸線量測(TLM)進一步探討石墨烯與金屬的接觸電阻,發現石墨烯對不同功函數的金屬其接觸電阻差異很大,因此,透過摻雜物輔助改質石墨烯使其功函數匹配變的非常重要,結果顯示,以鈦金屬作為接觸的元件,透過TEPA摻雜其接觸電阻最低;而鎳金屬作為接觸的元件,Catechol摻雜顯示最低的接觸電阻。 This study is mainly divided into two part. The first part is the influence of dopants on graphene. Through photoelectron spectroscopy, the dopants were qualitatively analyzed. We confirmed the charge transfer will happen between dopant and graphene through the displacement of the characteristic peak of carbon 1s and the change in the work function of graphene. TEPA is an N-type dopant, and Catechol is a p-type dopant. Next, the Hall measurement is used to analyze the change of doping time on the mobility and resistivity of graphene. The correlation between carrier concentration, mobility and resistivity can be known by Drude formula and understanding that both carrier mobility and resistivity decrease with increasing doping time is compensated by carrier concentration. Finally, we finished quantitative analysis through the Raman spectroscopy and electrical Dirac point shift. In the second part, transmission line measurement (TLM) will be used to explore the contact resistance between graphene and metal. We found that the contact resistance of graphene to metal with different work function had a big difference. Work function matching becomes very important. The results show that the contact resistance of Titanium as the contact metal is the lowest through TEPA doping; while Nickel as the contact metal, Catechol doping shows the lowest contact resistance. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/71105 |
DOI: | 10.6342/NTU202004069 |
全文授權: | 有償授權 |
顯示於系所單位: | 光電工程學研究所 |
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U0001-1908202009565100.pdf 目前未授權公開取用 | 4.12 MB | Adobe PDF |
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