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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳育任(Yuh-Renn Wu) | |
| dc.contributor.author | Tian-Jing Jiang | en |
| dc.contributor.author | 江天靖 | zh_TW |
| dc.date.accessioned | 2021-06-17T04:53:14Z | - |
| dc.date.available | 2020-08-24 | |
| dc.date.copyright | 2020-08-24 | |
| dc.date.issued | 2020 | |
| dc.date.submitted | 2020-08-20 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/71105 | - |
| dc.description.abstract | 本研究主要分文兩階段，第一部分為摻雜物對石墨烯的影響，我們透過光電子能譜對摻雜物做定性分析，從碳1s特徵峰的位移以及材料功函數改變中，了解摻雜物確實與石墨烯發生了載子交換，並改變了石墨烯的費米能階，以TEPA為N型摻雜物，Catechol為P型。接著，透過霍爾量測分析摻雜時間對石墨烯載子遷移率以及電阻率的變化，藉由德汝德公式可知載子濃度、載子遷移率對電阻率的相關性，了解載子遷移率及電阻率都隨摻雜時間增加而下降是透過載子濃度的補償。最後透過拉曼光譜以及電性狄拉克點的位移做定量分析。 第二部分將利用傳輸線量測(TLM)進一步探討石墨烯與金屬的接觸電阻，發現石墨烯對不同功函數的金屬其接觸電阻差異很大，因此，透過摻雜物輔助改質石墨烯使其功函數匹配變的非常重要，結果顯示，以鈦金屬作為接觸的元件，透過TEPA摻雜其接觸電阻最低；而鎳金屬作為接觸的元件，Catechol摻雜顯示最低的接觸電阻。 | zh_TW |
| dc.description.abstract | This study is mainly divided into two part. The first part is the influence of dopants on graphene. Through photoelectron spectroscopy, the dopants were qualitatively analyzed. We confirmed the charge transfer will happen between dopant and graphene through the displacement of the characteristic peak of carbon 1s and the change in the work function of graphene. TEPA is an N-type dopant, and Catechol is a p-type dopant. Next, the Hall measurement is used to analyze the change of doping time on the mobility and resistivity of graphene. The correlation between carrier concentration, mobility and resistivity can be known by Drude formula and understanding that both carrier mobility and resistivity decrease with increasing doping time is compensated by carrier concentration. Finally, we finished quantitative analysis through the Raman spectroscopy and electrical Dirac point shift. In the second part, transmission line measurement (TLM) will be used to explore the contact resistance between graphene and metal. We found that the contact resistance of graphene to metal with different work function had a big difference. Work function matching becomes very important. The results show that the contact resistance of Titanium as the contact metal is the lowest through TEPA doping; while Nickel as the contact metal, Catechol doping shows the lowest contact resistance. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T04:53:14Z (GMT). No. of bitstreams: 1 U0001-1908202009565100.pdf: 4222890 bytes, checksum: d47f064ae23d76ed99ed9e94b15ff37e (MD5) Previous issue date: 2020 | en |
| dc.description.tableofcontents | 口試委員會審定書 # 誌謝 I 中文摘要 II ABSTRACT III CONTENTS IV List of Figures VII List of Tables XI Chapter 1 緒論 1 1.1 背景簡介 1 1.1.1 半導體發展趨勢 1 1.1.2 二維材料興起之優勢 2 1.2 石墨烯簡介 4 1.2.1 石墨烯結構與基本特性 4 1.2.2 石墨烯的製備方法 6 1.2.3 石墨烯之摻雜介紹 7 1.2.4 石墨烯困境與未來應用 9 1.3 研究動機 11 Chapter 2 實驗理論與方法 12 2.1 實驗理論及原理 12 2.1.1 化學氣象沉積(Chemical Vapor Deposition ,CVD) 12 2.1.2 金屬與石墨烯接觸特性 14 2.1.3 石墨烯場效電晶體 18 2.2 實驗儀器介紹 19 2.2.1 氧電漿蝕刻機 19 2.2.2 蒸鍍機 19 2.2.3 拉曼光譜儀(Raman spectrometer) 20 2.2.4 光電子能譜分析 23 2.2.5 掃描式電子束微影設備 25 2.2.6 霍爾效應量測分析儀 26 2.2.7 電性量測系統 26 2.3 實驗方法 27 2.3.1 石墨烯成長 27 2.3.2 石墨烯轉印製程 28 2.3.3 金屬電極製備 29 2.3.4 石墨烯氣相摻雜法 30 Chapter 3 摻雜對石墨烯之特性分析 31 3.1 光譜特性分析 31 3.1.1 X光光電子光譜(XPS)分析 31 3.1.2 紫外光光電子光譜(UPS)分析 32 3.2 霍爾量測分析以及四點探針量測 35 3.3 拉曼光譜分析 37 3.4 電學特性分析 41 Chapter 4 金屬/二維材料之介面分析 44 4.1 金屬/石墨烯介面分析 44 4.1.1 金屬/石墨烯介面摻雜阻抗分析 44 4.1.2 金屬/P型摻雜石墨烯接觸阻抗分析 46 4.1.3 金屬/N型摻雜石墨烯接觸阻抗分析 47 4.1.4 數據統整分析 49 4.2 下電極元件摻雜分析 53 4.2.1 P型摻雜接觸電阻分析 53 4.2.2 N型摻雜接觸電阻分析 55 4.3 短通道長度元件分析 57 Chapter 5 總結與未來展望 59 5.1 總結 59 5.2 未來展望 59 REFERENCE 60 | |
| dc.language.iso | zh-TW | |
| dc.subject | 氣相吸附摻雜 | zh_TW |
| dc.subject | 載子遷移率 | zh_TW |
| dc.subject | 接觸電阻 | zh_TW |
| dc.subject | 電阻率 | zh_TW |
| dc.subject | 石墨烯 | zh_TW |
| dc.subject | Doping | en |
| dc.subject | Graphene | en |
| dc.subject | Physisorption | en |
| dc.subject | Resistivity | en |
| dc.subject | Mobility | en |
| dc.subject | Contact Resistance | en |
| dc.title | 利用有機分子摻雜石墨稀改良其接觸電阻 | zh_TW |
| dc.title | Improve Contact Resistance of Graphene with Organic Molecule doping | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 108-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.coadvisor | 吳志毅(Chih-I Wu) | |
| dc.contributor.oralexamcommittee | 陳美杏(Mei-Hsin Chen),吳肇欣(Chao-Hsin Wu),張文豪(Wen-Hao Chang) | |
| dc.subject.keyword | 石墨烯,氣相吸附摻雜,電阻率,載子遷移率,接觸電阻, | zh_TW |
| dc.subject.keyword | Graphene,Physisorption,Doping,Resistivity,Mobility,Contact Resistance, | en |
| dc.relation.page | 63 | |
| dc.identifier.doi | 10.6342/NTU202004069 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2020-08-20 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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