E頻段寬頻正交調變器、超寬頻低本地振盪功率應用降頻混頻器與寬頻後失真線性化降頻混頻器之研究

Abstract

本篇論文探討應用於微波與毫米波頻段調變器與混頻器的之研究，依據電路不同的應用而分成三個部分論述。 第一部分闡述一個實現90奈米互補式金氧半場效電晶體製程(CMOS)用於E頻段之正交調變器(I/Q Modulator)。採用次諧波混頻器(Sub-harmonic Mixer)的架構來實現高頻段的設計，此調變器在33毫瓦功耗和9 dB本地振盪(LO)功率下，於71 – 86 GHz範圍有-8 dB的轉換增益、-16 dBm的一分貝壓縮輸出功率(OP1dB)、11 dBc的鏡像抑制比(Image Rejection Ratio)。 第二部分闡述一個實現90奈米互補式金氧半場效電晶體製程之降頻混頻器，整體操作頻率為Ku頻段、K頻段以及Ka頻段，在混頻器開關級使操作在弱反轉區，可以使混頻器在低本地振盪功率的應用，可以舒緩壓控振盪器(VCO)的設計，此混頻器在11毫瓦功耗和-6 dB本地振盪功率下，於14 – 40 GHz範圍有3.2 dB的轉換增益、-3.5 dBm的一分貝壓縮輸入功率(IP1dB)。 最後一部份是一個實現以180奈米互補式金氧半場效電晶體製程用於K頻段之線性化降頻混頻器。採用後失真線性化(Post-Distortion)技術來改善線性度，在電路中加入一個電晶體開關做切換，分成後失真線性化模式以及一般電流注入模式比較。此混頻器在32毫瓦功率和0 dB本地振盪功率下，於20 – 32 GHz範圍有-0.37 dB的轉換增益、2.5 dBm的一分貝壓縮輸入功率、輸入三階截斷點(IIP3)為17 dBm。

In this thesis, we discuss the researches of modulator and mixer for microwave or millimeter-wave applications. The first part presents an I/Q modulator in 90-nm CMOS process for E-band. The modulator attains -8 dB conversion gain from 71 to 86 GHz, -16 dBm OP1dB, 11 dBc IRR with only 33 mW power consumption and 9 dBm LO power by sub-harmonic mixers. The second part presents a wideband down conversion mixer in 90-nm CMOS process for Ku-Band, K-band and Ka-band. In this mixer, the switch stage operates in the weak-inversion region for low LO power application and reduces the design of VCO. The mixer attains 3.2 dB conversion gain from 14 to 40 GHz, -3.5 dBm IP1dB with only 11 mW power consumption and -6 dBm LO power. The last part presents a linearity down conversion mixer in 180-nm CMOS process for K-band. In this mixer which uses the post-distortion linearity technology to improve the linearity. In the structure, we use the transistor switch to divide into two states that are post-distortion state and current bleeding state to compare performance. The mixer attains -0.37 dB conversion gain from 20 to 32 GHz, 2.5 dBm IP1dB, 17 dBm IIP3 with only 32 mW power consumption and 0 dBm LO power.