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標題: | 電子束微影霧化效應感知多級電路繞線 Fogging Effect Aware Multilevel Routing in Electron Beam Lithography |
作者: | Chien Yu 游謙 |
指導教授: | 郭斯彥 |
關鍵字: | 實體設計,電子束微影,霧化效應,可製造性,電路繞線, Physical Design,Electron Beam Lithography,Fogging Effect,Manufacturability,Routing, |
出版年 : | 2018 |
學位: | 碩士 |
摘要: | 電子束微影為具發展性之下世代微影技術中的一項,用以克服傳統光學微影的解析度限制。然而,電子束微影要實際應用於量產製作仍然存在挑戰。其中一項是霧化效應,它是阻劑和基質中的再散射電子所引起的,在毫米級的範圍造成多餘的曝光。霧化效應導致線端失真和關鍵尺寸的不一致性,其與電路圖樣密度有密切關係,過去的研究在電路擺置階段修正霧化效應。電路擺置結束後,在電路繞線階段,導線密度相當於圖樣密度。因此,透過導線連接的佈置,我們可以控制霧化效應。本論文提出了一種考慮電子束霧化效應的繞線演算法,以盡量減少霧化效應的變化。我們提出了一個新的觀點用以抵消霧化效應。實驗結果顯示我們的演算法可以減少霧化效應的變化,甚至改善執行時間。 Electron beam lithography (EBL) is one promising candidates among next-generation lithography (NGL) technology to conquer the resolution limit of the optical lithography. However, there are still challenges for EBL to apply practically in massive production. One of those obstacles is the fogging effect. It caused by re-scattered electrons in the resist and the substrate. Increases the undesired exposure in a wide range up to millimeter scale. As a result, the fogging effect gives rise to line end distortion and the non-uniformity of critical dimension (CD). The pattern distribution is highly related to the fogging effect. A previous work tackles the fogging effect in the placement stage. In the routing stage, pattern density is equivalent to the wire density. As routing follows closely after placement stage. Thus, by arranging the positions of net connections, we can control the result of the fogging effect. In this thesis, we present a routing algorithm considering e-beam fogging effect to minimize the variation of the fogging effect. A new point of view has proposed to offset the fogging effect. Experimental results show that our algorithm can reduce the fogging effect variation even improving the runtime. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/69149 |
DOI: | 10.6342/NTU201801296 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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