以光學嚴格耦合波分析法模擬面射型雷射結構

Abstract

在本篇論文中，我們介紹了嚴格耦合波分析法的精神，也利用此方法對文獻上的結構去模擬其一維至二維的穿透率與內部光場圖，結構為上出光的垂直共振腔面射型雷射。一維模擬的結果是由正向入射的光場做為光源，二維模擬的結果由傅立葉級數展開的週期性結構，在週期足夠大的情況下，去避免週期性結構之間的耦合來模擬單一元件的情況。我們利用一維模擬的方法，做了關於布拉格反射層的反射率，透射率，能量損耗以及元件主動區內電場的最大值的分析，並優化其結構以改進主動區內的電場峰值。也利用二維的模擬方法比較了一維的結果。我們也考慮大尺寸的面射型雷射結構，在不考慮元件側邊的效應下，分析了其反射率以及主動區的品質。最後總結了一維的模擬模型對於面射型雷射的結構設計上是足夠的，但對於考慮橫向高階模態的效應，我們依然需要利用二維的模擬模型來分析。

In this thesis, the Rigorous Coupled-Wave Analysis method (RCWA) is applied to simulated the reflectivity, transparency, and optical pattern of Vertical Cavity Surface Emitting Lasers diode (VCSEL). The 1-D results were basically induced by normal incident, 2-D results were used to include the lateral confinement. To avoid the influence of periodic boundary condition, the period was set to be wide to avoid the coupling between each cavity. The 1-D and 2-D simulation models were applied to study the reflectivity, transparency and loss of Distributed Bragg Reflector (DBR). And factors influencing the threshold condition, i.e. the amplitude of electric field in active region were discussed. The 2-D dipole field model is also used to simulate the VCSEL device with large area, which won’t consider the confinement in lateral side, and analyzed the electric field in active region as well. And we demonstrated that the 1-D simulation model might be good enough for VCSELs structure design, while 2-D model might be suitable to analyze the higher order effect.