利用水溶液製程製作紅外光光偵測器在透明導電奈米碳管電極上

Abstract

本論文主要探討以溶液法製備之紅外光光偵測器在奈米碳管薄膜電極上，相較於常用於傳統光電元件之ITO透明導電玻璃需高真空製程、硬且脆之缺點，導電透光碳管薄膜電極提供一簡單、低成本之溶液製備方法可轉印在不同基板上，並具備可大面積製程、可撓性和較高之紅外光穿透度等優點。我們分析schottky接面與塊材異質接面兩種不同元件結構在碳管薄膜電極之電流-電壓特性。最後我們可以得到一以P3HT/PCBM/PbS混摻方式製備之塊材異質接面紅外光光偵測器在奈米碳管薄膜電極上，其光電轉換效率0.4%在波長1460之紅外光頻譜，因此我們可以製作一全溶液法製備之紅外光光偵測器在奈米碳管電極上，具低成本之製程與可撓性之特點。

This thesis aims to a solution processable infrared Photodetector on single-walled carbon nanotube (SWNTs) electrodes. Compare to the conventional indium tin oxide conductive electrodes had disadvantages of expensive high vacuum deposition process, rigid and non-flexible properties, we can deliver a simple and low-cost solution process on fabricating SWNTs thin film electrodes which could transfer to various substrates. Conductive and transparent SWNTs thin film had the advantages of large area processable, flexible and good infrared transmittance. We apply two different device structures on SWNTs electrode: Schottky junction diode and Bulk HeteroJunction diode.Finally we get a great infrared photo response for a P3HT/PCBM/PbS hybrid BHJ infrared Photodetector on SWNTs electrode with 0.4% external quantum efficiency at 1460nm.Therefore we can fabricate a all-solution processable, low cost infrared Photodetector on SWNTs electrodes.