互補金氧半導體合成傳輸線X頻帶主動帶止濾波器設計

Abstract

本篇論文提出了一個實現在互補金氧半導體(CMOS) 0.13微米製程上的傳輸線主動帶止濾波器設計技術。首先討論了三階主動濾波器的設計方法，而後提出了一個雙模主動濾波器。 在第一個部分提出的三階濾波器由三個單極點的單元所構成，而此單極點單元包含了一個開路共振器以及一個交叉耦合差動對。交叉耦合差動動在此用來提升共振器的品質因子以及有效的減少所需的面積。而在此設計中，使用了一種近橫向電磁互補式金屬合成傳輸線來設計濾波器。本文也介紹了此三階濾波器的設計流程。第二個部分則提出了一個由E型共振器組成的主動雙模帶止濾波器。利用雙模共振器的特性，我們可以減少設計濾波器所需的共振器數目，而達到有效縮減電路面積的目的。 兩個提出的電路都操作在10 GHz (X頻帶)。三階濾波器的面積為570 × 660微米平方，而雙模濾波器則為510 × 570微米平方。模擬與量測的結果具有高一致性並驗證了所提出的濾波器設計概念。

This dissertation presents the design of transmission-line-based (TL-based) active bandstop filter fabricated in standard 0.13-μm complementary metal-oxide -semiconductor (CMOS) technology. Firstly, the design methods of a third-order active filter are discussed, and following, a dual-mode active filter is proposed. The third-order active bandstop filter in the first part is synthesized with three single pole rejection elements, which consists of an open-loop resonator and a CMOS cross-coupled pair. The cross-coupled pair is as an active compensation circuit, which both enhances the quality factor of resonator and reduces the resonator size significantly. Synthetic quasi-TEM complementary-conductive-strip transmission-lines (CCS TLs) are used for resonator implementation. A third-order filter design procedure is proposed, which is based on the low-pass prototype filter design. The second part proposes a dual-mode active filter, comprising an E-shaped dual-mode resonator. Utilizing the properties of dual-mode resonator, which can reduce the number of required resonators for a given degree of filter, a compact filter configuration is obtained. Each of the filters operated on 10 GHz (X-band), and the size of the multi-pole filter is 570 × 660 μm2 while the dual-mode one is 510 × 570 μm2. The properties of the proposed filters will be verified by the simulation and measurement results.