單晶矽與石英之蝕刻速率研究

Abstract

本文之主要目的為利用微機電製程，在矽(110)晶圓和Z-cut石英晶圓上製造出ㄇ字型之蝕刻圖案，並以30%及40%重量百分濃度之KOH溶液蝕刻矽晶圓，以重量百分濃度49.5%之氫氟酸溶液和40%之氟化氨溶液以2:3比例調配之蝕刻液蝕刻石英晶圓，蝕刻溫度都控制在80℃，蝕刻時間為60分鐘，再利用晶圓切割機切開蝕刻斷面，觀察量測蝕刻面之形狀以及角度，來驗證張簡文添提出之二維蝕刻理論，並計算出各蝕刻面之米勒指標以及蝕刻速率。

The purpose of this thesis is to study the etching behavior of single crystal silicon (110) and quartz (z-cut). By using micro-electronic mechanical system frabrication, we can create specific pattern on the wafer surface. According to the two dimensional etch theory, we can decide the miller indices and calculate the etch rate of any lattice plane by measuring the geometric change of the pattern. We can verify the two dimensional etch theory and establish a data sheet for the futhre work.