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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 張家歐 | |
dc.contributor.author | Keng-Wei Chang | en |
dc.contributor.author | 張耕瑋 | zh_TW |
dc.date.accessioned | 2021-06-16T17:34:44Z | - |
dc.date.available | 2015-08-19 | |
dc.date.copyright | 2012-08-19 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-08-15 | |
dc.identifier.citation | 參考文獻
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/64204 | - |
dc.description.abstract | 本文之主要目的為利用微機電製程,在矽(110)晶圓和Z-cut石英晶圓上製造出ㄇ字型之蝕刻圖案,並以30%及40%重量百分濃度之KOH溶液蝕刻矽晶圓,以重量百分濃度49.5%之氫氟酸溶液和40%之氟化氨溶液以2:3比例調配之蝕刻液蝕刻石英晶圓,蝕刻溫度都控制在80℃,蝕刻時間為60分鐘,再利用晶圓切割機切開蝕刻斷面,觀察量測蝕刻面之形狀以及角度,來驗證張簡文添提出之二維蝕刻理論,並計算出各蝕刻面之米勒指標以及蝕刻速率。 | zh_TW |
dc.description.abstract | The purpose of this thesis is to study the etching behavior of single crystal silicon (110) and quartz (z-cut). By using micro-electronic mechanical system frabrication, we can create specific pattern on the wafer surface. According to the two dimensional etch theory, we can decide the miller indices and calculate the etch rate of any lattice plane by measuring the geometric change of the pattern. We can verify the two dimensional etch theory and establish a data sheet for the futhre work. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T17:34:44Z (GMT). No. of bitstreams: 1 ntu-101-R99543052-1.pdf: 8033195 bytes, checksum: 81f676fde427f5e9ad51ee6d9e622b40 (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 目錄
口試委員審定書…………………………………………………………………….…i 誌謝……………………………………………………………………………………ii 摘要…………………………………………………………………………………...iii Abstract…………………………………………………………………………….....iv 目錄……………………………………………………………………………………v 圖目錄………………………………………………………………………………..vii 表目錄………………………………………………………………………………...ix 第一章 導論……………………………………………………………………… ...1 1.1 文獻回顧………………………………………………………………… ...1 1.2 研究動機………………………………………………………………… ...3 1.3 論文概要………………………………………………………………… ...4 第二章 蝕刻理論………………………………………………………………… ...5 2.1 材料基本性質…………………………………………………………… ...5 2.1.1單晶矽………………………………………………………………...5 2.1.2石英…………………………………………………………………...5 2.1.3晶格種類……………………………………………………………...6 2.2 蝕刻理論………………………………………………………………… ...9 2.2.1 蝕刻長度變化率與蝕刻速率之關係………………………………11 2.2.2 內凹角隅的長度變化率與蝕刻速率之關係………………………12 2.2.3 外凸角隅的長度變化率與蝕刻速率之關係………………………15 2.3 研究方法…………………………………………………………………...18 2.3.1外凸角隅交線移動速率………………………………………… …18 2.3.2 內凹角隅交線移動速率……………………………………………22 2.3.3蝕刻面米勒指標之計算……………………………………………23 2.3.3.1 米勒指標定義………………………………………………23 2.3.3.2 石英之米勒指標計算………………………………………23 2.3.3.3 矽之米勒指標計算………………………………………….26 2.3.4計算晶格面之蝕刻速率…………………………………………….29 第三章 製程規劃及實驗步驟……………………………………………………..30 3.1 蝕刻製程規劃……………………………………………………………..30 3.2 實驗流程圖………………………………………………………………..32 3.2.1 矽晶圓…………………………………………………………..…..32 3.2.2 石英晶圓……………………………………………………………34 第四章 實驗結果與數據分析……………………………………………………..38 4.1 矽晶圓實驗結果…………………………………………………………..38 4.2 利用外凸角隅理論公式計算蝕刻面交線移動長度……………………..82 4.3 矽晶圓蝕刻面米勒指標計算……………………………………………..89 4.4 石英晶圓實驗結果………………………………………………………..97 4.5 利用內凹角隅理論公式計算蝕刻面交線移動長度……………………118 4.6 石英晶圓蝕刻面米勒指標計算…………………………………………123 第五章 結論………………………………………………………………………130 參考文獻……………………………………………………………………………131 附錄A 方程式相依之證明………………………………………………………134 作者簡歷 ………………………………………………………………………138 | |
dc.language.iso | zh-TW | |
dc.title | 單晶矽與石英之蝕刻速率研究 | zh_TW |
dc.title | Study of Etching Rate for Single Crystal Silicon and Quartz | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 張簡文添 | |
dc.contributor.oralexamcommittee | 周傳心,謝發華 | |
dc.subject.keyword | Z-cut石英,單晶矽(110),蝕刻速率,米勒指標,二維蝕刻理論, | zh_TW |
dc.subject.keyword | z-cut quartz,single crystal silicon,etch rate,miller indices,two dimensional etch theory, | en |
dc.relation.page | 138 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-08-15 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 應用力學研究所 | zh_TW |
顯示於系所單位: | 應用力學研究所 |
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