氧化鋅薄膜的蕭特基特性分析

Abstract

本論文研究以射頻磁控濺鍍法所成長的垂直結構氧化鋅透明薄膜與氧化銦錫薄膜的蕭特基接面性質分析。首先利用射頻磁控濺鍍法在氧化銦錫玻璃基板上成長透明氧化鋅薄膜，再利用雙氧水處理得到具有蕭特基特性的氧化鋅接面，再鍍上室溫成長的氧化銦錫透明導電層或其他金屬做為金屬接觸面做為完整的蕭特基半導體元件。 經雙氧水處理之氧化鋅接面已被研究證實具有良好之蕭特基效應，本實驗內容比較不同參數成長的透明氧化鋅薄膜與雙氧水處理蕭特基接面，利用X-ray分析晶體結構與組成，電子顯微鏡和表面粗度儀觀察表面成長情況。再利用電流-電壓曲線量測分析氧化鋅二極體元件的良莠。 結果證實，550˚C下成長的氧化鋅薄膜有適合進行雙氧水處理的狀態，再配合浸泡70˚C雙氧水5分鐘所得到的蕭特基整流效果也最好。實驗結果經計算後顯示，理想係數n最低可降至2.30

The formation of transparence vertical structure ZnO thin films by RF magnetron sputter and properties of Schottky contacts have been investigated. First we use RF magnetron Sputter to grow transparence vertical structure ZnO thin films on ITO glass substrate, and use hydrogen peroxide to treat the surface of ZnO thin films in order get Schottky behavior between the contact surface, then use RF magnetron Sputter coating metal layer above to have the Schottky contact complete. The surface treatment of ZnO thin films by hydrogen peroxide had been prove to have good Schottky rectified behavior, in this study we compare the difference of ZnO thin films which grow at different temperature by RF magnetron sputter. We also try different time of hydrogen peroxide surface treatment on the transparent ZnO thin films. We use X-ray to analyze the structure of the ZnO thin film, use FESEM and α-Step to examine to surface statue before and after hydrogen peroxide treatment. Then we obtain the I-V curve of ZnO thin film diodes to check how the rectify behaved. The research result show that ZnO thin films grows at 550˚C with 5 minute of hydrogen peroxide treated at 70˚C get the best performance of Schottky rectified behavior. Fitting by Origin 8 software and calculation, it is show that the ideality factor n can drop to 2.3 . Keywords: Zinc oxide, Transparent conducting oxides, RF sputter, Hydrogen peroxide, Schottky diode.